| Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices MH Park, DH Lee, K Yang, JY Park, GT Yu, HW Park, M Materano, ... Journal of Materials Chemistry C 8 (31), 10526-10550, 2020 | 130 | 2020 |
| Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ... Advanced Materials 35 (43), 2204904, 2023 | 125 | 2023 |
| Domains and domain dynamics in fluorite-structured ferroelectrics DH Lee, Y Lee, K Yang, JY Park, SH Kim, PRS Reddy, M Materano, ... Applied Physics Reviews 8 (2), 2021 | 82 | 2021 |
| A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective JY Park, K Yang, DH Lee, SH Kim, Y Lee, PR Reddy, JL Jones, MH Park Journal of Applied Physics 128 (24), 2020 | 72 | 2020 |
| Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide J Lee, K Yang, JY Kwon, JE Kim, DI Han, DH Lee, JH Yoon, MH Park Nano Convergence 10 (1), 55, 2023 | 45 | 2023 |
| Neuromorphic devices based on fluorite‐structured ferroelectrics DH Lee, GH Park, SH Kim, JY Park, K Yang, S Slesazeck, T Mikolajick, ... InfoMat 4 (12), e12380, 2022 | 38 | 2022 |
| Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ... Acta Materialia 222, 117405, 2022 | 32 | 2022 |
| Interfacial engineering of a Mo/Hf 0.3 Zr 0.7 O 2/Si capacitor using the direct scavenging effect of a thin Ti layer SH Kim, GT Yu, GH Park, DH Lee, JY Park, K Yang, EB Lee, JI Lee, ... Chemical Communications 57 (93), 12452-12455, 2021 | 22 | 2021 |
| Engineering strategies in emerging fluorite-structured ferroelectrics JY Park, DH Lee, K Yang, SH Kim, GT Yu, GH Park, EB Lee, KH Kim, ... ACS Applied Electronic Materials 4 (4), 1369-1380, 2021 | 20 | 2021 |
| Unveiled Ferroelectricity in Well‐Known Non‐Ferroelectric Materials and Their Semiconductor Applications DH Lee, Y Lee, YH Cho, H Choi, SH Kim, MH Park Advanced Functional Materials 33 (42), 2303956, 2023 | 17 | 2023 |
| Wake-up-mitigated giant ferroelectricity in Hf0. 5Zr0. 5O2 thin films through oxygen-providing, surface-oxidized W electrode K Yang, GY Kim, JJ Ryu, DH Lee, JY Park, SH Kim, GH Park, GT Yu, ... Materials Science in Semiconductor Processing 164, 107565, 2023 | 17 | 2023 |
| Perspective on ferroelectric devices: lessons from interfacial chemistry K Yang, SH Kim, HW Jeong, DH Lee, GH Park, Y Lee, MH Park Chemistry of Materials 35 (6), 2219-2237, 2023 | 15 | 2023 |
| Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates K Yang, EB Lee, DH Lee, JY Park, SH Kim, GH Park, GT Yu, JI Lee, ... Composites Part B: Engineering 236, 109824, 2022 | 15 | 2022 |
| A perspective on the physical scaling down of hafnia-based ferroelectrics JY Park, DH Lee, GH Park, J Lee, Y Lee, MH Park Nanotechnology 34 (20), 202001, 2023 | 13 | 2023 |
| The influence of crystallographic texture on structural and electrical properties in ferroelectric Hf0. 5Zr0. 5O2 Y Lee, RA Broughton, HA Hsain, SK Song, PG Edgington, MD Horgan, ... Journal of Applied Physics 132 (24), 2022 | 12 | 2022 |
| Emerging fluorite-structured antiferroelectrics and their semiconductor applications GH Park, DH Lee, H Choi, T Kwon, YH Cho, SH Kim, MH Park ACS Applied Electronic Materials 5 (2), 642-663, 2023 | 11 | 2023 |
| Logic and memory ferroelectric field-effect-transistor using reversible and irreversible domain wall polarization SH Kuk, S Han, DH Lee, BH Kim, J Shim, MH Park, JH Han, SH Kim IEEE Electron Device Letters 44 (1), 36-39, 2022 | 7 | 2022 |
| Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 film DH Lee, GH Park, SH Kim, K Yang, J Lee, H Choi, Y Lee, JJ Ryu, JI Lee, ... IEEE Electron Device Letters, 2023 | 6 | 2023 |
| Review of Electrical Characterization of Ceramic Thin Films for the Next Generation Semiconductor Devices D Lee, K Yang, JY Park, MH Park Ceramist 22 (4), 332-349, 2019 | 5 | 2019 |
| A fluorite-structured HfO 2/ZrO 2/HfO 2 superlattice based self-rectifying ferroelectric tunnel junction synapse DH Lee, JE Kim, YH Cho, S Kim, GH Park, H Choi, SY Lee, T Kwon, ... Materials Horizons 11 (21), 5251-5264, 2024 | 4 | 2024 |
