| Pulse-based capacitive memory window with high non-destructive read endurance in fully BEOL compatible ferroelectric capacitors S Mukherjee, J Bizindavyi, YC Luo, S Clima, J Read, MI Popovici, Y Xiang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 13 | 2023 |
| H3datten: Heterogeneous 3-d integrated hybrid analog and digital compute-in-memory accelerator for vision transformer self-attention W Li, M Manley, J Read, A Kaul, MS Bakir, S Yu IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2023 | 12 | 2023 |
| A 40nm RRAM compute-in-memory macro with parallelism-preserving ECC for iso-accuracy voltage scaling W Li, J Read, H Jiang, S Yu ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC …, 2022 | 8 | 2022 |
| Mac-ecc: In-situ error correction and its design methodology for reliable nvm-based compute-in-memory inference engine W Li, J Read, H Jiang, S Yu IEEE Journal on Emerging and Selected Topics in Circuits and Systems 12 (4 …, 2022 | 6 | 2022 |
| A method for reverse engineering neural network parameters from compute-in-memory accelerators J Read, W Li, S Yu 2022 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 302-307, 2022 | 6 | 2022 |
| A cross-layer framework for design space and variation analysis of non-volatile ferroelectric capacitor-based compute-in-memory accelerators YC Luo, J Read, A Lu, S Yu 2024 29th Asia and South Pacific Design Automation Conference (ASP-DAC), 159-164, 2024 | 5 | 2024 |
| In-Situ Encrypted NAND FeFET Array for Secure Storage and Compute-in-Memory Z Zhao, Y Xu, J Read, PK Hsu, Y Qin, TJ Huang, S Lim, K Kim, K Kim, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 4 | 2023 |
| Engineering nvCap From FEOL to BEOL with Ferroelectric Small-signal Non-destructive Read TH Kim, YC Luo, O Phadke, J Read, S Yu 2024 IEEE International Memory Workshop (IMW), 1-4, 2024 | 2 | 2024 |
| Total ionizing dose effect in tri-gate silicon ferroelectric transistor memory KA Aabrar, J Read, SG Kirtania, S Stepanoff, DE Wolfe, S Yu, S Datta 2022 International Electron Devices Meeting (IEDM), 32.7. 1-32.7. 4, 2022 | 2 | 2022 |
| Co-Optimization for Robust Power Delivery Design in 3D-Heterogeneous Integration of Compute In-Memory Accelerators A Kaul, M Manley, J Read, Y Luo, X Peng, S Yu, M Bakir 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 1 | 2024 |
| Enabling Long-Term Robustness in RRAM-based Compute-In-Memory Edge Devices J Read, W Li, S Yu 2023 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2023 | 1 | 2023 |
| Co-Optimization of Power Delivery Network Design for 3D Heterogeneous Integration of RRAM-based Compute In-Memory Accelerators M Manley, J Read, A Kaul, S Yu, M Bakir IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2025 | | 2025 |
| Capacitive Synaptor with Gate Surrounding Semiconductor Pillar Structure and Overturned Charge Injection for Compute‐in‐Memory CK Kim, J Read, M Shon, TH Kim, MS Kim, JM Yu, MS Yoo, YK Choi, S Yu Advanced Intelligent Systems, 2400371, 2024 | | 2024 |
| Laboratory for Emerging Devices and Circuits MY Lee, J Read, J Lee, A Lu, X Peng, S Huang, Y Luo, PY Chen, S Yu | | |
| MAC-ECC: In-Situ Error Correction and W Li, J Read, H Jiang, S Yu | | |
Shimeng YuGeorgia Institute of Technology, Dean's ProfessorVerified email at ece.gatech.edu
