| Study of charge trapping effects on AlGaN/GaN HEMTs under UV illumination with pulsed IV measurement V Nagarajan, KM Chen, BY Chen, GW Huang, CW Chuang, CJ Lin, ... IEEE Transactions on Device and Materials Reliability 20 (2), 436-441, 2020 | 27 | 2020 |
| Low-frequency noise characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV illumination V Nagarajan, KM Chen, HY Lin, HH Hu, GW Huang, CJ Lin, BY Chen, ... IEEE Transactions on Nanotechnology 19, 405-409, 2020 | 14 | 2020 |
| Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance SK Singh, RK Kakkerla, HB Joseph, A Gupta, D Anandan, V Nagarajan, ... Materials Science in Semiconductor Processing 101, 247-252, 2019 | 12 | 2019 |
| Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio D Anandan, V Nagarajan, RK Kakkerla, HW Yu, HL Ko, SK Singh, CT Lee, ... Journal of Crystal Growth 522, 30-36, 2019 | 11 | 2019 |
| Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD D Anandan, RK Kakkerla, HW Yu, HL Ko, V Nagarajan, SK Singh, CT Lee, ... Journal of Crystal Growth 506, 45-54, 2019 | 10 | 2019 |
| A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects V Nagarajan, KM Chen, HC Wang, SK Singh, D Anandan, YC Lin, ... Microelectronics Journal 87, 51-54, 2019 | 8 | 2019 |
| Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FET SK Singh, A Gupta, HW Yu, V Nagarajan, D Anandan, RK Kakkerla, ... Materials Research Express 4 (11), 114002, 2017 | 4 | 2017 |
| Analysis of high-frequency behavior of AlGaN/GaN HEMTs and MIS-HEMTs under UV illumination KM Chen, CJ Lin, V Nagarajan, EY Chang, CW Lin, GW Huang ECS Journal of Solid State Science and Technology 10 (5), 055004, 2021 | 3 | 2021 |
| Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer PY Tsai, V Nagarajan, CH Lin, CF Dee, SC Chen, HC Kuo, CT Lee, ... ECS Journal of Solid State Science and Technology 11 (8), 085005, 2022 | 2 | 2022 |
| Study of e-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator for power applications KN Huang, YC Lin, JC Lin, CC Hsu, JH Lee, CH Wu, JN Yao, HT Hsu, ... Journal of Electronic Materials 49, 1348-1353, 2020 | 2 | 2020 |
| Impact of Fringing Field on Shell Radius and Spacer Dielectric on Device Performance of InAs-GaSb Core-Shell Nanowire nTFET HB Joseph, SK Singh, V Nagarajan, D Anandan, EY Chang, RK Kakkerla, ... ECS Journal of Solid State Science and Technology 10 (6), 061004, 2021 | 1 | 2021 |
| Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor SK Singh, PK Kaushik, RK Kakkerla, A Gupta, D Anandan, V Nagarajan, ... Engineering Research Express 2 (3), 035004, 2020 | 1 | 2020 |
| Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD D Anandan, HW Yu, EY Chang, SK Singh, V Nagarajan, CT Lee, CF Dee, ... Materials Science in Semiconductor Processing 135, 106103, 2021 | | 2021 |
| Selective Area Epitaxy of Axial Wurtzite-InAs Nanowire on InGaAs NW by MOCVD D Anandan, EY Chang, HW Yu, HL Ko, V Nagarajan, SK Singh 2021 International Symposium on VLSI Technology, Systems and Applications …, 2021 | | 2021 |
| VLSI-TSA 2021-2021 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS, PROCEEDINGS S De, WX Bu, BH Qiu, DD Lu, CJ Su, YJ Lee, CH Wu, A Useinov, TL Wu, ... | | 2021 |
| 紫外光輻射下的氮化鎵高電子遷移率電晶體之電子特性分析研究 V NAGARAJAN 交通大學材料科學與工程系所學位論文 2020, 1-62, 2020 | | 2020 |
| Electrical Characterization of GaN-Based HEMTs Under Ultraviolet Illumination V Nagarajan PQDT-Global, 2020 | | 2020 |
| Study of Interface Trap Charges in InAs Nanowire Tunnel FET SK Singh, A Gupta, V Nagarajan, D Anandan, RK Kakkerla, HW Yu, ... The Physics of Semiconductor Devices: Proceedings of IWPSD 2017, 1165-1170, 2019 | | 2019 |
| Investigation on Parasitic Loss at the AlN/Si Interface for GaN-HEMTs Application YH Chen, TT Luong, V Nagarajan, TH Chiang, EY Chang Stress 10, 3GPa, 0 | | |
