| Auger recombination in InGaN measured by photoluminescence YC Shen, GO Mueller, S Watanabe, NF Gardner, A Munkholm, ... Applied Physics Letters 91 (14), 2007 | 1443 | 2007 |
| High-power AlGaInN flip-chip light-emitting diodes JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ... Applied Physics Letters 78 (22), 3379-3381, 2001 | 875 | 2001 |
| High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ... Applied physics letters 75 (16), 2365-2367, 1999 | 659 | 1999 |
| Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕ cm2 NF Gardner, GO Müller, YC Shen, G Chen, S Watanabe, W Götz, ... Applied Physics Letters 91 (24), 2007 | 560 | 2007 |
| InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ... Applied Physics Letters 84 (19), 3885-3887, 2004 | 504 | 2004 |
| Carrier distribution in (0001) InGaN∕ GaN multiple quantum well light-emitting diodes A David, MJ Grundmann, JF Kaeding, NF Gardner, TG Mihopoulos, ... Applied Physics Letters 92 (5), 2008 | 422 | 2008 |
| High power LEDs–Technology status and market applications FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ... physica status solidi (a) 194 (2), 380-388, 2002 | 326 | 2002 |
| Indium gallium nitride smoothing structures for III-nitride devices WK Goetz, MD Camras, NF Gardner, RS Kern, AY Kim, SA Stockman US Patent 6,635,904, 2003 | 299 | 2003 |
| Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes NF Gardner, JC Kim, JJ Wierer, YC Shen, MR Krames Applied Physics Letters 86 (11), 2005 | 283 | 2005 |
| Indium gallium nitride smoothing structures for III-nitride devices WK Goetz, MD Camras, NF Gardner, RS Kern, AY Kim, SA Stockman US Patent 6,489,636, 2002 | 236 | 2002 |
| Semiconductor light emitting devices NF Gardner, JJ Wierer Jr, GO Mueller, MR Krames US Patent 6,847,057, 2005 | 200 | 2005 |
| Performance of high‐power AlInGaN light emitting diodes AY Kim, W Götz, DA Steigerwald, JJ Wierer, NF Gardner, J Sun, ... physica status solidi (a) 188 (1), 15-21, 2001 | 169 | 2001 |
| Substrate for growing a III-V light emitting device MR Krames, NF Gardner, JE Epler US Patent 8,334,155, 2012 | 123 | 2012 |
| Semiconductor light emitting devices including in-plane light emitting layers JC Kim, JE Epler, NF Gardner, MR Krames, JJ Wierer Jr US Patent 7,808,011, 2010 | 117 | 2010 |
| High‐Power III‐Nitride Emitters for Solid‐State Lighting MR Krames, J Bhat, D Collins, NF Gardner, W Götz, CH Lowery, ... physica status solidi (a) 192 (2), 237-245, 2002 | 103 | 2002 |
| Local indium segregation and bang gap variations in high efficiency green light emitting InGaN/GaN diodes JR Jinschek, R Erni, NF Gardner, AY Kim, C Kisielowski Solid State Communications 137 (4), 230-234, 2006 | 80 | 2006 |
| 1.4× efficiency improvement in transparent-substrate (AlxGa1− x) 0.5 In0. 5P light-emitting diodes with thin (⩽ 2000 Å) active regions NF Gardner, HC Chui, EI Chen, MR Krames, JW Huang, FA Kish, ... Applied physics letters 74 (15), 2230-2232, 1999 | 76 | 1999 |
| Significant strain dependence of piezoelectric constants in quantum wells G Vaschenko, D Patel, CS Menoni, NF Gardner, J Sun, W Götz, CN Tomé, ... Physical Review B 64 (24), 241308, 2001 | 73 | 2001 |
| III-Nitride light emitting devices with low driving voltage W Goetz, NF Gardner, RS Kern, AY Kim, A Munkholm, SA Stockman, ... US Patent 6,630,692, 2003 | 69 | 2003 |
| Droop in III-nitrides: Comparison of bulk and injection contributions A David, NF Gardner Applied Physics Letters 97 (19), 2010 | 68 | 2010 |
