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Seunghwan Seo
Seunghwan Seo
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Title
Cited by
Cited by
Year
Semiconductor structure including a ferroelectric transistor and method for the formation thereof
R Van Bentum, J Yun, SEO Seunghwan, J Schmid
US Patent 9,293,556, 2016
332016
Low-variation SRAM bitcells in 22nm FDSOI technology
V Joshi, H Ramamurthy, S Balasubramanian, S Seo, H Yoon, X Zou, ...
2017 Symposium on VLSI Technology, T222-T223, 2017
152017
Design of a robust analog-to-digital converter based on complementary SET/CMOS hybrid amplifier
CH Lee, SW Kim, JU Lee, SH Seo, GC Kang, KS Roh, KY Kim, SY Lee, ...
IEEE Transactions on Nanotechnology 6 (6), 667-675, 2007
152007
Dynamic bias temperature instability-like behaviors under Fowler–Nordheim program/erase stress in nanoscale silicon-oxide-nitride-oxide-silicon memories
SH Seo, GC Kang, KS Roh, KY Kim, S Lee, KJ Song, CM Choi, SR Park, ...
Applied Physics Letters 92 (13), 2008
132008
Method and apparatus for bit-line sensing gates on an SRAM cell
SEO Seunghwan, J Yun
US Patent 9,224,455, 2015
92015
Semiconductor structure including a ferroelectric transistor and method for the formation thereof
R Van Bentum, J Yun, SEO Seunghwan, J Schmid
US Patent 9,536,992, 2017
82017
Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices
JU Lee, KS Roh, GC Kang, SH Seo, KY Kim, S Lee, KJ Song, CM Choi, ...
Applied Physics Letters 91 (22), 2007
82007
Sub-bandgap optical GIDL current method for extracting the interface states in the gate-to-drain overlapped region of MOSFETs
JB Choi, SH Seo, JU Lee, GC Kang, SW Kim, KS Roh, KY Kim, CH Lee, ...
Journal of the Korean Physical Society 49 (4), 1565, 2006
52006
Novel back gate doping ultra low retention power 22nm FDSOL SRAM for IoT application
M Chang, N Chan, V Joshi, S Hecker, U Ziller, P Poth, A Zaka, ...
2018 48th European Solid-State Device Research Conference (ESSDERC), 78-81, 2018
32018
Investigation of the channel-width dependence of CHEI program/HHI erase cycling behavior in nitride-based charge-trapping flash (CTF) memory devices
SH Seo, SW Kim, JU Lee, GC Kang, KS Roh, KY Kim, S Lee, CM Choi, ...
Journal of the Korean Physical Society 52 (2), 481-486, 2008
32008
Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories
SH Seo, SW Kim, JU Lee, GC Kang, KS Roh, KY Kim, SY Lee, CM Choi, ...
Solid-state electronics 52 (6), 844-848, 2008
22008
Extraction of interface states at emitter–base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation
SW Kim, KS Roh, SH Seo, KY Kim, GC Kang, S Lee, CM Choi, SR Park, ...
Microelectronics Reliability 48 (3), 382-388, 2008
22008
Comparative Study on Circuit Performance Depending on Double-Gate (DG) and Triple-Gate (TG) FinFET Structure
KY Kim, SR Park, SH Seo, GC Kang, KS Roh, S Lee, KJ Song, CM Choi, ...
2008 15th Korean Conference on Semiconductors, 2008
22008
Optical charge pumping technique for extracting interface states of nano-scale SONOS flash memories
S Lee, KC Jeon, JU Lee, SW Kim, SH Seo, KS Roh, GC Kang, KY Kim, ...
Journal of the Korean Physical Society 51 (6), 2063-268, 2007
22007
Comparative Study on Program/Erase Efficiency of 3-D SONOS Flash Memory Cell Transistor: Structural Approach from Multi-Gate (MG) to Gate-All-Around (GAA) FET
SR Park, KY Kim, JH Park, SH Seo, GC Kang, KS Roh, S Lee
2008 15th Korean Conference on Semiconductors, 2008
12008
Optical Charge Pumping Method for Extracting the Energy Level of Interface States in Program/Erase Cycled SONOS Flash Memory Cell and Its Program Time Dependence
K Jeon, S Lee, SH Seo, KS Roh, GC Kang, KY Kim, CM Choi, KJ Song, ...
2008 15th Korean Conference on Semiconductors, 2008
12008
Hole Influence on Both the Degradation of Erase Efficiency and the Dynamic BTI-like Behavior in Program/Erase Cycled NAND-type Nitride-Based Charge Trapping Flash Memories
DH Kim, DM Kim, SH Seo
2008 15th Korean Conference on Semiconductors, 2008
2008
Novel Flat Band Voltage Extraction using Optical Substrate Current and Lateral Profiling of Trapped Charges in Localized Charge Trapping Flash Memory Cells
KS Roh, GC Kang, SH Seo, KY Kim, KJ Song, JH Park, S Lee, CM Choi, ...
2008 15th Korean Conference on Semiconductors, 2008
2008
Extraction method of the interface and nitride trap density in nitride-based charge trapped flash memories using an optical response (Electron devices: 第 15 回先端半導体デバイ …
SY Lee, JU Lee, SH Seo, KS Roh, GC Kang, KY Kim, CM Choi, KJ Song, ...
2007 Asia-Pacific Workshop on Fundamentals and Application of Advanced …, 2007
2007
Sub-bandgap photonic base current method for extracting the trap density at heterointerfaces in heterojunction bipolar transistors
SW Kim, JU Lee, GC Kang, KS Roh, SH Seo, KY Kim, CH Lee, SY Lee, ...
Journal of the Korean Physical Society 49 (4), 1558, 2006
2006
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