| The advanced unified defect model for Schottky barrier formation WE Spicer, Z Liliental‐Weber, E Weber, N Newman, T Kendelewicz, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1988 | 498 | 1988 |
| Bi‐epitaxial grain boundary junctions in YBa2Cu3O7 K Char, MS Colclough, SM Garrison, N Newman, G Zaharchuk Applied physics letters 59 (6), 733-735, 1991 | 392 | 1991 |
| High-field superconductivity in alloyed thin films V Braccini, A Gurevich, JE Giencke, MC Jewell, CB Eom, DC Larbalestier, ... Physical Review B—Condensed Matter and Materials Physics 71 (1), 012504, 2005 | 329 | 2005 |
| Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN XY Cui, JE Medvedeva, B Delley, AJ Freeman, N Newman, C Stampfl Physical review letters 95 (25), 256404, 2005 | 278 | 2005 |
| 1.54‐μm photoluminescence from Er‐implanted GaN and AlN RG Wilson, RN Schwartz, CR Abernathy, SJ Pearton, N Newman, ... Applied Physics Letters 65 (8), 992-994, 1994 | 272 | 1994 |
| Observation of ferromagnetism above 900K in Cr–GaN and Cr–AlN HX Liu, SY Wu, RK Singh, L Gu, DJ Smith, N Newman, NR Dilley, ... Applied Physics Letters 85 (18), 4076-4078, 2004 | 263 | 2004 |
| Scanning tunneling microscopy studies of Si donors () in GaAs JF Zheng, X Liu, N Newman, ER Weber, DF Ogletree, M Salmeron Physical review letters 72 (10), 1490, 1994 | 255 | 1994 |
| High-temperature superconducting microwave devices: Fundamental issues in materials, physics, and engineering N Newman, WG Lyons Journal of Superconductivity 6, 119-160, 1993 | 247 | 1993 |
| Method of forming grain boundary junctions in high temperature superconductor films K Char, SM Garrison, N Newman, GG Zaharchuk US Patent 5,366,953, 1994 | 226 | 1994 |
| p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg M Rubin, N Newman, JS Chan, TC Fu, JT Ross Applied physics letters 64 (1), 64-66, 1994 | 223 | 1994 |
| Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films SY Wu, HX Liu, L Gu, RK Singh, L Budd, M Van Schilfgaarde, ... Applied physics letters 82 (18), 3047-3049, 2003 | 221 | 2003 |
| Electrical study of Schottky barriers on atomically clean GaAs (110) surfaces N Newman, M Van Schilfgaarde, T Kendelwicz, MD Williams, WE Spicer Physical Review B 33 (2), 1146, 1986 | 195 | 1986 |
| Spin lifetimes of electrons injected into GaAs and GaN S Krishnamurthy, M Van Schilfgaarde, N Newman Applied physics letters 83 (9), 1761-1763, 2003 | 154 | 2003 |
| On the Fermi level pinning behavior of metal/III–V semiconductor interfaces N Newman, WE Spicer, T Kendelewicz, I Lindau Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 140 | 1986 |
| Microwave surface resistance of epitaxial YBa2Cu3O7 thin films on sapphire K Char, N Newman, SM Garrison, RW Barton, RC Taber, SS Laderman, ... Applied physics letters 57 (4), 409-411, 1990 | 137 | 1990 |
| Large‐area YBa2Cu3O7− δ thin films on sapphire for microwave applications BF Cole, GC Liang, N Newman, K Char, G Zaharchuk, JS Martens Applied physics letters 61 (14), 1727-1729, 1992 | 131 | 1992 |
| Observation of two in‐plane epitaxial states in YBa2Cu3O7− δ films on yttria‐stabilized ZrO2 SM Garrison, N Newman, BF Cole, K Char, RW Barton Applied physics letters 58 (19), 2168-2170, 1991 | 123 | 1991 |
| YBa2Cu3O7− δ superconducting films with low microwave surface resistance over large areas N Newman, K Char, SM Garrison, RW Barton, RC Taber, CB Eom, ... Applied physics letters 57 (5), 520-522, 1990 | 117 | 1990 |
| Experimental study of decomposition ZY Fan, DG Hinks, N Newman, JM Rowell Applied Physics Letters 79 (1), 87-89, 2001 | 116 | 2001 |
| Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films N Newman, J Ross, M Rubin Applied physics letters 62 (11), 1242-1244, 1993 | 116 | 1993 |
