| Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer M Uma, N Balaram, PR Sekhar Reddy, V Janardhanam, ... Journal of Electronic Materials 48, 4217-4225, 2019 | 49 | 2019 |
| Design of resistive load inverter and common source amplifier circuits using symmetric and asymmetric nanowire FETs VB Sreenivasulu, NA Kumari, V Lokesh, J Ajayan, M Uma, V Vijayvargiya Journal of Electronic Materials 52 (11), 7268-7279, 2023 | 18 | 2023 |
| Effect of rare-earth Pr6O11 insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization M Uma, V Rajagopal Reddy, V Janardhanam, CJ Choi Journal of Materials Science: Materials in Electronics 30, 18710-18719, 2019 | 17 | 2019 |
| Performance comparison of nanosheet FET, CombFET, and TreeFET: device and circuit perspective NA Kumari, VB Sreenivasulu, V Vijayvargiya, AK Upadhyay, J Ajayan, ... IEEE Access 12, 9563-9571, 2024 | 15 | 2024 |
| Electrical and carrier transport properties of Au/Pr6O11/n-GaN MIS structure with a high-k rare-earth oxide interlayer at high temperature range M Uma, MSP Reddy, KR Reddy, VR Reddy Vacuum 174, 109201, 2020 | 13 | 2020 |
| Statistical distribution of barrier heights, current conduction mechanism and voltage-dependent capacitance–frequency characteristics of Au/Fe3O4/n-GaN … M Uma, M Siva Pratap Reddy, V Rajagopal Reddy SN Applied Sciences 1, 1-9, 2019 | 3 | 2019 |
| Threshold Voltage Stability in AlGaN/GaN MIS-HEMT Structure Under Cryogenic Environment YH Chen, FC Chu, M Uma, M Aslam, YJ Lee, Y Li, S Samukawa, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
V.Rajagopal ReddyProfessor of Physics, Sri Venkateswara UniversityVerified email at svuniversity.ac.in