On the importance of radiative and Auger losses in GaN-based quantum wells J Hader, JV Moloney, B Pasenow, SW Koch, M Sabathil, N Linder, ... Applied Physics Letters 92 (26), 2008 | 329 | 2008 |
106 W continuous-wave output power from vertical-external-cavity surface-emitting laser B Heinen, TL Wang, M Sparenberg, A Weber, B Kunert, J Hader, ... Electronics letters 48 (9), 1, 2012 | 287 | 2012 |
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes J Hader, JV Moloney, SW Koch Applied Physics Letters 96 (22), 2010 | 286 | 2010 |
On the origin of IQE‐‘droop’in InGaN LEDs A Laubsch, M Sabathil, W Bergbauer, M Strassburg, H Lugauer, M Peter, ... physica status solidi c 6 (S2 2), S913-S916, 2009 | 188 | 2009 |
Temperature-dependence of the internal efficiency droop in GaN-based diodes J Hader, JV Moloney, SW Koch Applied Physics Letters 99 (18), 2011 | 147 | 2011 |
Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB 6 O 10 in an external … Y Kaneda, JM Yarborough, L Li, N Peyghambarian, L Fan, C Hessenius, ... Optics letters 33 (15), 1705-1707, 2008 | 117 | 2008 |
Microscopic evaluation of spontaneous emission-and Auger-processes in semiconductor lasers J Hader, JV Moloney, SW Koch IEEE journal of quantum electronics 41 (10), 1217-1226, 2005 | 114 | 2005 |
Microscopic theory of gain and spontaneous emission in GaInNAs laser material J Hader, SW Koch, JV Moloney Solid-State Electronics 47 (3), 513-521, 2003 | 114 | 2003 |
Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers L Fan, M Fallahi, JT Murray, R Bedford, Y Kaneda, AR Zakharian, J Hader, ... Applied Physics Letters 88 (2), 2006 | 112 | 2006 |
5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser M Fallahi, L Fan, Y Kaneda, C Hessenius, JÖ Hader, H Li, JV Moloney, ... IEEE Photonics Technology Letters 20 (20), 1700-1702, 2008 | 108 | 2008 |
Microscopic theory of gain, absorption, and refractive index in semiconductor laser materials-influence of conduction-band nonparabolicity and coulomb-induced intersubband coupling J Hader, JV Moloney, SW Koch IEEE journal of quantum electronics 35 (12), 1878-1886, 1999 | 107 | 1999 |
High-power optically pumped semiconductor laser at 1040 nm TL Wang, Y Kaneda, JM Yarborough, J Hader, JV Moloney, A Chernikov, ... IEEE Photonics Technology Letters 22 (9), 661-663, 2010 | 101 | 2010 |
Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime M Hofmann, A Wagner, C Ellmers, C Schlichenmeier, S Schäfer, ... Applied Physics Letters 78 (20), 3009-3011, 2001 | 101 | 2001 |
Experimental and theoretical analysis of optically pumped semiconductor disk lasers AR Zakharian, J Hader, JV Moloney, SW Koch, P Brick, S Lutgen Applied Physics Letters 83 (7), 1313-1315, 2003 | 98 | 2003 |
Supression of carrier recombination in semiconductor lasers by phase-space filling J Hader, JV Moloney, SW Koch Applied Physics Letters 87 (20), 2005 | 97 | 2005 |
Quantum design of semiconductor active materials: laser and amplifier applications JV Moloney, J Hader, SW Koch Laser & Photonics Reviews 1 (1), 24-43, 2007 | 91 | 2007 |
Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers J Hader, SW Koch, JV Moloney, EP O’Reilly Applied Physics Letters 77 (5), 630-632, 2000 | 90 | 2000 |
Propagation induced dephasing in semiconductor high-harmonic generation I Kilen, M Kolesik, J Hader, JV Moloney, U Huttner, MK Hagen, SW Koch Physical review letters 125 (8), 083901, 2020 | 87 | 2020 |
Microscopic modeling of gain and luminescence in semiconductors J Hader, JV Moloney, SW Koch, WW Chow IEEE Journal of selected topics in quantum electronics 9 (3), 688-697, 2003 | 80 | 2003 |
Quantum design strategy pushes high‐power vertical‐external‐cavity surface‐emitting lasers beyond 100 W TL Wang, B Heinen, J Hader, C Dineen, M Sparenberg, A Weber, ... Laser & Photonics Reviews 6 (5), L12-L14, 2012 | 75 | 2012 |