| Statistical variability and reliability in nanoscale FinFETs X Wang, AR Brown, B Cheng, A Asenov Electron Devices Meeting (IEDM), 2011 IEEE International, 5.4. 1-5.4. 4, 2011 | 323 | 2011 |
| Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: A full-scale 3-D simulation scaling study X Wang, AR Brown, N Idris, S Markov, G Roy, A Asenov Electron Devices, IEEE Transactions on 58 (8), 2293-2301, 2011 | 157 | 2011 |
| Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor XD Huang, Y Li, HY Li, KH Xue, X Wang, XS Miao IEEE Electron Device Letters 41 (4), 529-552, 2020 | 104* | 2020 |
| Simulation Study of Dominant Statistical Variability Sources in 32-nm High-k/Metal Gate CMOS X Wang, G Roy, O Saxod, A Bajolet, A Juge, A Asenov Electron Device Letters, IEEE 33 (5), 643-645, 2012 | 73* | 2012 |
| Variability Aware Simulation Based Design-Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization A Asenov, B Cheng, X Wang, AR Brown, C Millar, C Alexander, ... IEEE Transactions on Electron Devices 62 (6), 1682 - 1690, 2015 | 72 | 2015 |
| Statistical-variability compact-modeling strategies for BSIM4 and PSP B Cheng, D Dideban, N Moezi, C Millar, G Roy, X Wang, S Roy, A Asenov Design & Test of Computers, IEEE 27 (2), 26-35, 2010 | 71 | 2010 |
| Interplay between process-induced and statistical variability in 14-nm CMOS technology double-gate SOI FinFETs X Wang, B Cheng, AR Brown, C Millar, JB Kuang, S Nassif, A Asenov IEEE Transactions on Electron Devices 60 (8), 2485-2492, 2013 | 64 | 2013 |
| ZrO2 Ferroelectric FET for Non-volatile Memory Application H Liu, C Wang, G Han, J Li, Y Peng, Y Liu, X Wang, N Zhang, C Duan, ... IEEE Electron Device Letters 40 (9), 1419-1422, 2019 | 50 | 2019 |
| Advanced simulation of statistical variability and reliability in nano CMOS transistors A Asenov, S Roy, RA Brown, G Roy, C Alexander, C Riddet, C Millar, ... Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-1, 2008 | 50 | 2008 |
| HfOx/AlOy Superlattice‐Like Memristive Synapse C Wang, GQ Mao, M Huang, E Huang, Z Zhang, J Yuan, W Cheng, ... Advanced Science 9 (21), 2201446, 2022 | 46 | 2022 |
| Nanowire transistor solutions for 5nm and beyond A Asenov, Y Wang, B Cheng, X Wang, P Asenov, T Al-Ameri, VP Georgiev 2016 17th International Symposium on Quality Electronic Design (ISQED), 269-274, 2016 | 40 | 2016 |
| Geometry, temperature, and body bias dependence of statistical variability in 20-nm bulk CMOS technology: A comprehensive simulation analysis X Wang, F Adamu-Lema, B Cheng, A Asenov Electron Devices, IEEE Transactions on 60 (5), 1547-1554, 2013 | 38 | 2013 |
| FinFET Centric Variability-Aware Compact Model Extraction and Generation Technology Supporting DTCO X Wang, B Cheng, D Reid, A Pender, P Asenov, C Millar, A Asenov IEEE Transactions on Electron Devices 62 (10), 3139-3146, 2015 | 37 | 2015 |
| Physics-Based Device-Circuit Cooptimization Scheme for 7-nm Technology Node SRAM Design and Beyond Q Huo, Z Wu, X Wang, W Huang, J Yao, J Bu, F Zhang, L Li, M Liu IEEE Transactions on Electron Devices 67 (3), 907-914, 2020 | 36 | 2020 |
| A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology X Jiang, S Guo, R Wang, X Wang, B Cheng, A Asenov, R Huang IEEE Electron Device Letters 37 (8), 962-965, 2016 | 35 | 2016 |
| Predictive Compact Modeling of Random Variations in FinFET Technology for 16/14nm Node and Beyond X Jiang, X Wang, R Wang, B Cheng, A Asenov, R Huang Electron Devices Meeting (IEDM), 2015 IEEE International, 28.3.1-28.3.4, 2015 | 35 | 2015 |
| RTS Amplitude Distribution in 20nm SOI FinFETs Subject to Statistical Variability X Wang, AR Brown, B Cheng, A Asenov Simulation of Semiconductor Processes and Devices (SISPAD), 2012 Proceedings …, 2012 | 33 | 2012 |
| Domains of Dirichlet forms and effective resistance estimates on pcf fractals J Hu, X Wang Studia Math 177 (2), 153-172, 2006 | 30 | 2006 |
| Ferroelectricity in HfO2 from a Coordination Number Perspective JH Yuan, GQ Mao, KH Xue, N Bai, C Wang, Y Cheng, H Lyu, H Sun, ... Chemistry of Materials 35 (1), 94-103, 2022 | 28 | 2022 |
| Two memristors-based XOR logic demonstrated with encryption/decryption Y Song, Q Wu, X Wang, C Wang, X Miao IEEE Electron Device Letters 42 (9), 1398-1401, 2021 | 26 | 2021 |
a asenovThe University of GlasgowVerified email at glasgow.ac.uk
