| Fabrication of high-density out-of-plane microneedle arrays with various heights and diverse cross-sectional shapes H Roh, YJ Yoon, JS Park, DH Kang, SM Kwak, BC Lee, M Im Nano-Micro Letters 14, 1-19, 2022 | 53 | 2022 |
| Fabrication and characterization of a thin-body poly-Si 1T DRAM with charge-trap effect JH Seo, YJ Yoon, E Yu, W Sun, H Shin, IM Kang, JH Lee, S Cho IEEE Electron Device Letters 40 (4), 566-569, 2019 | 39 | 2019 |
| Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced–Characteristic for Switching Applications JH Seo, YW Jo, YJ Yoon, DH Son, CH Won, HS Jang, IM Kang, JH Lee IEEE Electron Device Letters 37 (7), 855-858, 2016 | 35 | 2016 |
| TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs YJ Yoon, JH Seo, MS Cho, HS Kang, CH Won, IM Kang, JH Lee Solid-State Electronics 124, 54-57, 2016 | 33 | 2016 |
| Suppression of current collapse in AlGaN/GaN MISHFET with carbon‐doped GaN/undoped GaN multi‐layered buffer structure HS Kang, CH Won, YJ Kim, DS Kim, YJ Yoon, IM Kang, YS Lee, JH Lee physica status solidi (a) 212 (5), 1116-1121, 2015 | 33 | 2015 |
| A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance YJ Yoon, JH Seo, S Cho, JH Lee, IM Kang Applied Physics Letters 114 (18), 2019 | 32 | 2019 |
| Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) JH Seo, YJ Yoon, S Lee, JH Lee, S Cho, IM Kang Current Applied Physics 15 (3), 208-212, 2015 | 32 | 2015 |
| Retinal degeneration reduces consistency of network-mediated responses arising in ganglion cells to electric stimulation YJ Yoon, JI Lee, YJ Jang, S An, JH Kim, SI Fried, M Im IEEE Transactions on Neural Systems and Rehabilitation Engineering 28 (9 …, 2020 | 30 | 2020 |
| Capacitorless one-transistor dynamic random access memory based on double-gate GaAs junctionless transistor YJ Yoon, JH Seo, MS Cho, BG Kim, SH Lee, IM Kang Japanese Journal of Applied Physics 56 (6S1), 06GF01, 2017 | 30 | 2017 |
| Design and analysis of sub-10 nm junctionless fin-shaped field-effect transistors SY Kim, JH Seo, YJ Yoon, GM Yoo, YJ Kim, HR Eun, HS Kang, J Kim, ... JSTS: Journal of Semiconductor Technology and Science 14 (5), 508-517, 2014 | 26 | 2014 |
| Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer … YJ Yoon, JH Seo, IM Kang Japanese Journal of Applied Physics 57 (4S), 04FG03, 2018 | 20 | 2018 |
| Design and analysis of AlGaN/GaN MIS HEMTs with a dual-metal-gate structure YI Jang, SH Lee, JH Seo, YJ Yoon, RH Kwon, MS Cho, BG Kim, GM Yoo, ... JSTS: Journal of Semiconductor Technology and Science 17 (2), 223-229, 2017 | 18 | 2017 |
| Anomalous DC characteristics of AlGaN/GaN HEMTs depending on proton irradiation energies DS Kim, JH Lee, JG Kim, YJ Yoon, JS Lee, JH Lee ECS Journal of Solid State Science and Technology 9 (6), 065005, 2020 | 17 | 2020 |
| Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances JH Jung, MS Cho, WD Jang, SH Lee, J Jang, JH Bae, YJ Yoon, IM Kang Applied Physics A 126, 1-7, 2020 | 17 | 2020 |
| Universal dry synthesis and patterning of high-quality and-purity graphene quantum dots by ion-beam assisted chemical vapor deposition JM Ha, NE Lee, YJ Yoon, SH Lee, YS Hwang, JK Suk, CY Lee, CR Kim, ... Carbon 186, 28-35, 2022 | 16 | 2022 |
| Deep sub-60 mV/decade subthreshold swing in AlGaN/GaN FinMISHFETs with M-plane sidewall channel Q Dai, DH Son, YJ Yoon, JG Kim, X Jin, IM Kang, DH Kim, Y Xu, ... IEEE Transactions on Electron Devices 66 (4), 1699-1703, 2019 | 15 | 2019 |
| GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime KS Im, JH Seo, YJ Yoon, YI Jang, JS Kim, S Cho, JH Lee, S Cristoloveanu, ... Japanese Journal of Applied Physics 53 (11), 118001, 2014 | 15 | 2014 |
| One-transistor dynamic random-access memory based on gate-all-around junction-less field-effect transistor with a Si/SiGe heterostructure YJ Yoon, JS Lee, DS Kim, SH Lee, IM Kang Electronics 9 (12), 2134, 2020 | 14 | 2020 |
| Polycrystalline-silicon-mosfet-based capacitorless dram with grain boundaries and its performances SH Lee, WD Jang, YJ Yoon, JH Seo, HJ Mun, MS Cho, J Jang, JH Bae, ... IEEE Access 9, 50281-50290, 2021 | 13 | 2021 |
| Design and optimization of germanium-based gate-metal-core vertical nanowire tunnel FET WD Jang, YJ Yoon, MS Cho, JH Jung, SH Lee, J Jang, JH Bae, IM Kang Micromachines 10 (11), 749, 2019 | 12 | 2019 |
