| Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements AJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ... IEEE transactions on Electron Devices 55 (8), 1835-1840, 2008 | 390 | 2008 |
| Electronic circuit reliability modeling JB Bernstein, M Gurfinkel, X Li, J Walters, Y Shapira, M Talmor Microelectronics Reliability 46 (12), 1957-1979, 2006 | 235 | 2006 |
| Compact modeling of MOSFET wearout mechanisms for circuit-reliability simulation X Li, J Qin, JB Bernstein IEEE Transactions on device and materials reliability 8 (1), 98-121, 2008 | 227 | 2008 |
| Microelectronics reliability: physics-of-failure based modeling and lifetime evaluation M White Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space …, 2008 | 160 | 2008 |
| Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast–Techniques M Gurfinkel, HD Xiong, KP Cheung, JS Suehle, JB Bernstein, Y Shapira, ... IEEE Transactions on Electron Devices 55 (8), 2004-2012, 2008 | 155 | 2008 |
| Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors SK Powell, N Goldsman, JM McGarrity, J Bernstein, CJ Scozzie, A Lelis Journal of Applied Physics 92 (7), 4053-4061, 2002 | 119 | 2002 |
| Scaled CMOS technology reliability users guide M White Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space …, 2010 | 102 | 2010 |
| Spatial distributions of trapping centers in HfO2∕ SiO2 gate stacks D Heh, CD Young, GA Brown, PY Hung, A Diebold, G Bersuker, EM Vogel, ... Applied physics letters 88 (15), 2006 | 83 | 2006 |
| Time-Dependent Dielectric Breakdown of 4H-SiC/ MOS Capacitors M Gurfinkel, JC Horst, JS Suehle, JB Bernstein, Y Shapira, KS Matocha, ... IEEE transactions on device and materials reliability 8 (4), 635-641, 2008 | 81 | 2008 |
| Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress EM Vogel, JS Suehle, MD Edelstein, B Wang, Y Chen, JB Bernstein IEEE Transactions on Electron Devices 47 (6), 1183-1191, 2000 | 78 | 2000 |
| Temperature dependence of soft breakdown and wear-out in sub-3 nm SiO/sub 2/films JS Suehle, EM Vogel, B Wang, JB Bernstein 2000 IEEE International Reliability Physics Symposium Proceedings. 38th …, 2000 | 73 | 2000 |
| Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements HD Xiong, D Heh, M Gurfinkel, Q Li, Y Shapira, C Richter, G Bersuker, ... Microelectronic Engineering 84 (9-10), 2230-2234, 2007 | 72 | 2007 |
| A new SPICE reliability simulation method for deep submicrometer CMOS VLSI circuits X Li, J Qin, B Huang, X Zhang, JB Bernstein IEEE Transactions on Device and Materials Reliability 6 (2), 247-257, 2006 | 71 | 2006 |
| Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions CC Shen, AR Hefner, DW Berning, JB Bernstein IEEE Transactions on Industry Applications 36 (2), 614-624, 2000 | 67 | 2000 |
| Analysis of the electrically stimulated acoustic-wave method for observing space charge in semi-insulating films JB Bernstein Physical Review B 44 (19), 10804, 1991 | 65 | 1991 |
| Reliability simulation and circuit-failure analysis in analog and mixed-signal applications B Yan, J Qin, J Dai, Q Fan, JB Bernstein IEEE Transactions on device and materials reliability 9 (3), 339-347, 2009 | 64 | 2009 |
| Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation JS Suehle, EM Vogel, P Roitman, JF Conley Jr, AH Johnston, B Wang, ... Applied physics letters 80 (7), 1282-1284, 2002 | 63 | 2002 |
| Spatial Distributions of Trapping Centers in Gate Stack D Heh, CD Young, GA Brown, PY Hung, A Diebold, EM Vogel, ... IEEE transactions on electron devices 54 (6), 1338-1345, 2007 | 62 | 2007 |
| Heavy-ion-induced soft breakdown of thin gate oxides JF Conley, JS Suehle, AH Johnston, B Wang, T Miyahara, EM Vogel, ... IEEE Transactions on Nuclear Science 48 (6), 1913-1916, 2001 | 57 | 2001 |
| Short-time failure of metal interconnect caused by current pulses JE Murguia, JB Bernstein IEEE Electron Device Letters 14 (10), 481-483, 1993 | 50 | 1993 |
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of TechnologyVerified email at mse.gatech.edu