| Operational SER Calculations on the SAC-C Orbit Using the Multi-Scales Single Event Phenomena Predictive Platform (MUSCA ) G Hubert, S Duzellier, C Inguimbert, C Boatella-Polo, FÇ Bezerra, ... IEEE Transactions on Nuclear Science 56 (6), 3032-3042, 2009 | 156 | 2009 |
| Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions JM Palau, G Hubert, K Coulie, B Sagnes, MC Calvet, S Fourtine IEEE Transactions on Nuclear Science 48 (2), 225-231, 2001 | 144 | 2001 |
| Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation G Hubert, L Artola, D Regis Integration 50, 39-47, 2015 | 137 | 2015 |
| Impact of the radial ionization profile on SEE prediction for SOI transistors and SRAMs beyond the 32-nm technological node M Raine, G Hubert, M Gaillardin, L Artola, P Paillet, S Girard, ... IEEE Transactions on Nuclear Science 58 (3), 840-847, 2011 | 115 | 2011 |
| Modeling single event transients in advanced devices and ICs L Artola, M Gaillardin, G Hubert, M Raine, P Paillet IEEE Transactions on Nuclear Science 62 (4), 1528-1539, 2015 | 101 | 2015 |
| Single-event transient modeling in a 65-nm bulk CMOS technology based on multi-physical approach and electrical simulations G Hubert, L Artola IEEE Transactions on Nuclear Science 60 (6), 4421-4429, 2013 | 83 | 2013 |
| Anthology of the development of radiation transport tools as applied to single event effects RA Reed, RA Weller, A Akkerman, J Barak, W Culpepper, S Duzellier, ... IEEE Transactions on Nuclear Science 60 (3), 1876-1911, 2013 | 80 | 2013 |
| SEU prediction from SET modeling using multi-node collection in bulk transistors and SRAMs down to the 65 nm technology node L Artola, G Hubert, KM Warren, M Gaillardin, RD Schrimpf, RA Reed, ... IEEE Transactions on Nuclear Science 58 (3), 1338-1346, 2011 | 77 | 2011 |
| Detailed analysis of secondary ions' effect for the calculation of neutron-induced SER in SRAMs G Hubert, JM Palau, K Castellani-Coulie, MC Calvet, S Fourtine IEEE Transactions on Nuclear Science 48 (6), 1953-1959, 2001 | 77 | 2001 |
| Neutron monitors and muon detectors for solar modulation studies: 2. ϕ time series A Ghelfi, D Maurin, A Cheminet, L Derome, G Hubert, F Melot Advances in Space Research 60 (4), 833-847, 2017 | 72 | 2017 |
| Various SEU conditions in SRAM studied by 3-D device simulation K Castellani-Coulié, JM Palau, G Hubert, MC Calvet, PE Dodd, F Sexton IEEE Transactions on Nuclear Science 48 (6), 1931-1936, 2001 | 62 | 2001 |
| Continuous High-Altitude Measurements of Cosmic Ray Neutrons and SEU/MCU at Various Locations: Correlation and Analyses Based-On MUSCA SEP G Hubert, R Velazco, C Federico, A Cheminet, C Silva-Cardenas, ... IEEE Transactions on Nuclear Science 60 (4), 2418-2426, 2013 | 50 | 2013 |
| ICARE on-board SAC-C: More than 8 years of SEU and MCU, analysis and prediction C Boatella, G Hubert, R Ecoffet, S Duzellier IEEE Transactions on Nuclear Science 57 (4), 2000-2009, 2010 | 50 | 2010 |
| Multiple event transient induced by nuclear reactions in CMOS logic cells C Rusu, A Bougerol, L Anghel, C Weulerse, N Buard, S Benhammadi, ... 13th IEEE International On-Line Testing Symposium (IOLTS 2007), 137-145, 2007 | 50 | 2007 |
| Accelerator-based neutron irradiation of integrated circuits at GENEPI2 (France) F Villa, M Baylac, S Rey, O Rossetto, W Mansour, P Ramos, R Velazco, ... 2014 IEEE Radiation Effects Data Workshop (REDW), 1-5, 2014 | 49 | 2014 |
| Monte Carlo prediction of heavy ion induced MBU sensitivity for SOI SRAMs using radial ionization profile M Raine, G Hubert, M Gaillardin, P Paillet, A Bournel IEEE Transactions on Nuclear Science 58 (6), 2607-2613, 2011 | 49 | 2011 |
| Radiation effects investigations based on atmospheric radiation model (ATMORAD) considering GEANT4 simulations of extensive air showers and solar modulation potential G Hubert, A Cheminet Radiation research 184 (1), 83-94, 2015 | 48 | 2015 |
| Modeling of radiation-induced single event transients in SOI FinFETS L Artola, G Hubert, RD Schrimpf 2013 IEEE international reliability physics symposium (irps), SE. 1.1-SE. 1.6, 2013 | 47 | 2013 |
| Collected charge analysis for a new transient model by TCAD simulation in 90 nm technology L Artola, G Hubert, S Duzellier, F Bezerra IEEE Transactions on Nuclear Science 57 (4), 1869-1875, 2010 | 44 | 2010 |
| Real-Life SEU Experiments on 90 nm SRAMs in Atmospheric Environment: Measures Versus Predictions Done by Means ofPlatform P Peronnard, R Velazco, G Hubert IEEE Transactions on Nuclear Science 56 (6), 3450-3455, 2009 | 44 | 2009 |