| A four-terminal, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation N El-Hinnawy, P Borodulin, B Wagner, MR King, JS Mason, EB Jones, ... IEEE Electron Device Letters 34 (10), 1313-1315, 2013 | 151 | 2013 |
| X-ray excited luminescence and local structures in Tb-doped Y2O3 nanocrystals YL Soo, SW Huang, ZH Ming, YH Kao, GC Smith, E Goldburt, R Hodel, ... Journal of Applied Physics 83 (10), 5404-5409, 1998 | 113 | 1998 |
| A 7.3 THz cut-off frequency, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation N El-Hinnawy, P Borodulin, BP Wagner, MR King, JS Mason, EB Jones, ... 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2013 | 107 | 2013 |
| Cascode power switch topologies TR McNutt, JV Reichl, HC Heame III, EJ Stewart, SD Van Campen, ... US Patent 7,719,055, 2010 | 106 | 2010 |
| Demonstration of a 600-V, 60-A, bidirectional silicon carbide solid-state circuit breaker DP Urciuoli, V Veliadis, HC Ha, V Lubomirsky 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and …, 2011 | 94 | 2011 |
| Composite nanophosphor screen for detecting radiation RN Bhargava US Patent 5,952,665, 1999 | 77 | 1999 |
| A 2055-V (at 0.7 {mA/cm}(2)) 24-A (at 706 {W/cm}(2)) Normally On 4H-SiC JFET With 6.8-{mm}(2) Active Area and Blocking-Voltage Capability Reaching the Material Limit V Veliadis, M Snook, T McNutt, H Hearne, P Potyraj, A Lelis, C Scozzie IEEE Electron Device Letters 29 (12), 1325-1327, 2008 | 60 | 2008 |
| A 1680-V (at 1 ) 54-A (at 780 ) Normally ON 4H-SiC JFET With 0.143- Active Area V Veliadis, T McNutt, M Snook, H Hearne, P Potyraj, C Scozzie IEEE Electron Device Letters 29 (10), 1132-1134, 2008 | 54 | 2008 |
| Transformation of deep impurities to shallow impurities by quantum confinement RN Bhargava, V Chhabra, B Kulkarni, JV Veliadis physica status solidi (b) 210 (2), 621-629, 1998 | 51 | 1998 |
| Controlled agglomeration of Tb-doped nanocrystals studied by x-ray absorption fine structure, x-ray excited luminescence, and photoluminescence YL Soo, SW Huang, YH Kao, V Chhabra, B Kulkarni, JVD Veliadis, ... Applied physics letters 75 (16), 2464-2466, 1999 | 47 | 1999 |
| Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage LS Chen, V Veliadis US Patent 7,372,087, 2008 | 45 | 2008 |
| Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 V Veliadis, B Steiner, K Lawson, SB Bayne, D Urciuoli, HC Ha, ... IEEE electron device letters 34 (3), 384-386, 2013 | 41 | 2013 |
| A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation V Veliadis, EJ Stewart, H Hearne, M Snook, A Lelis, C Scozzie IEEE Electron Device Letters 31 (5), 470-472, 2010 | 38 | 2010 |
| 600-V/2-A symmetrical bi-directional power flow using vertical-channel JFETs connected in common source configuration V Veliadis, D Urciuoli, H Hearne, HC Ha, R Howell, C Scozzie Materials Science Forum 645, 1147-1150, 2010 | 32 | 2010 |
| Composite nanophosphor screen for detecting radiation having optically reflective coatings RN Bhargava, NR Taskar, V Chhabra, JVD Veliadis US Patent 6,300,640, 2001 | 32 | 2001 |
| Investigation of the suitability of 1200-V normally-off recessed-implanted-gate SiC VJFETs for efficient power-switching applications V Veliadis, H Hearne, EJ Stewart, HC Ha, M Snook, T McNutt, R Howell, ... IEEE electron device letters 30 (7), 736-738, 2009 | 31 | 2009 |
| Microchannel high resolution X-ray sensor having an integrated photomultiplier NR Taskar, JVD Veliadis, V Chhabra, B Kulkarni, N Pandit, RN Bhargava, ... US Patent 6,452,184, 2002 | 31 | 2002 |
| Effect of capacitive current on reverse recovery of body diode of 10kV SiC MOSFETs and external 10kV SiC JBS diodes A Kumar, K Vechalapu, S Bhattacharya, V Veliadis, E Van Brunt, D Grider, ... 2017 IEEE 5th Workshop on wide bandgap power devices and applications (WiPDA …, 2017 | 30 | 2017 |
| Suitability of N-ON recessed implanted gate vertical-channel SiC JFETs for optically triggered 1200 V solid-state circuit breakers V Veliadis, B Steiner, K Lawson, SB Bayne, D Urciuoli, HC Ha IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 874-879, 2016 | 30 | 2016 |
| Degradation and full recovery in high-voltage implanted-gate SiC JFETs subjected to bipolar current stress V Veliadis, H Hearne, EJ Stewart, M Snook, W Chang, JD Caldwell, ... IEEE electron device letters 33 (7), 952-954, 2012 | 29 | 2012 |