| Barrier layer for FinFET channels RK Oxland, M Van Dal, MC Holland, G Vellianitis, M Passlack US Patent 9,214,555, 2015 | 653 | 2015 |
| Nanowire field effect transistor device having a replacement gate RK Oxland US Patent 9,472,618, 2016 | 479 | 2016 |
| Demonstration of scaled Ge p-channel FinFETs integrated on Si MJH Van Dal, G Vellianitis, G Doornbos, B Duriez, TM Shen, CC Wu, ... 2012 International Electron Devices Meeting, 23.5. 1-23.5. 4, 2012 | 85 | 2012 |
| An ultralow-resistance ultrashallow metallic source/drain contact scheme for III–V NMOS R Oxland, SW Chang, X Li, SW Wang, G Radhakrishnan, W Priyantha, ... IEEE electron device letters 33 (4), 501-503, 2012 | 61 | 2012 |
| Scaled p-channel Ge FinFET with optimized gate stack and record performance integrated on 300mm Si wafers B Duriez, G Vellianitis, MJH Van Dal, G Doornbos, R Oxland, ... 2013 IEEE International Electron Devices Meeting, 20.1. 1-20.1. 4, 2013 | 58 | 2013 |
| Vertical CMOS structure and method RK Oxland US Patent 9,472,551, 2016 | 48 | 2016 |
| InAs N-MOSFETs with record performance of Ion= 600 μA/μm at Ioff= 100 nA/μm (Vd= 0.5 V) SW Chang, X Li, R Oxland, SW Wang, CH Wang, R Contreras-Guerrero, ... 2013 IEEE International Electron Devices Meeting, 16.1. 1-16.1. 4, 2013 | 47 | 2013 |
| InAs hole inversion and bandgap interface state density of 2× 1011 cm− 2 eV− 1 at HfO2/InAs interfaces CH Wang, SW Wang, G Doornbos, G Astromskas, K Bhuwalka, ... Applied Physics Letters 103 (14), 2013 | 38 | 2013 |
| Ge n-channel FinFET with optimized gate stack and contacts MJH Van Dal, B Duriez, G Vellianitis, G Doornbos, R Oxland, M Holland, ... 2014 IEEE International Electron Devices Meeting, 9.5. 1-9.5. 4, 2014 | 35 | 2014 |
| Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium S Taking, A Banerjee, H Zhou, X Li, AZ Khokhar, R Oxland, I McGregor, ... Electronics letters 46 (4), 301-302, 2010 | 32 | 2010 |
| Method for forming a nanowire field effect transistor device having a replacement gate RK Oxland US Patent 9,136,332, 2015 | 30 | 2015 |
| InAs FinFETs With Hfin = 20 nm Fabricated Using a Top–Down Etch Process R Oxland, SWC Li, SW Wang, T Vasen, R P., R Contreras-Guerrero, ... IEEE Electron Device Letters 37 (3), 261-264, 2016 | 29 | 2016 |
| FinFET with channel backside passivation layer device and method G Doornbos, M Van Dal, G Vellianitis, B Duriez, KK Bhuwalka, RK Oxland, ... US Patent 9,412,871, 2016 | 28 | 2016 |
| InAs N-MOSFETs with record performance of Ion= 600 µA/µm at Ioff= 100 nA/µm (Vd= 0.5 V) SW Chang, X Li, R Oxland, SW Wang, CH Wang, R Contreras-Guerrero, ... Proceedings of Technical Digest of the IEEE International Electron Devices …, 2013 | 24 | 2013 |
| High-Performance InAs Gate-All-Around Nanowire MOSFETs on 300 mm Si Substrates G Doornbos, M Holland, G Vellianitis, MJHV Dal, B Duriez, R Oxland, ... Journal of the Electron Devices Society 4 (5), 253-259, 2016 | 22 | 2016 |
| FinFET with a buried semiconductor material between two fins G Vellianitis, M Van Dal, B Duriez, R Oxland US Patent 8,987,835, 2015 | 22 | 2015 |
| High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations CH Wang, G Doornbos, G Astromskas, G Vellianitis, R Oxland, ... AIP Advances 4 (4), 2014 | 20 | 2014 |
| Methods of forming semiconductor devices and FinFET devices, and FinFET devices MC Holland, M Passlack, RK Oxland US Patent 9,355,920, 2016 | 19 | 2016 |
| Field-Effect Mobility of InAs Surface Channel nMOSFET With LowScaled Gate-Stack SW Wang, T Vasen, G Doornbos, R Oxland, SW Chang, X Li, ... IEEE Transactions on Electron Devices 62 (8), 2429-2436, 2015 | 18 | 2015 |
| Iii-v compound semiconductor device having dopant layer and method of making the same RK Oxland, M Van Dal US Patent App. 13/467,133, 2013 | 17 | 2013 |