Articles with public access mandates - Hojoon RyuLearn more
Available somewhere: 12
Ferroelectric tunneling junctions based on aluminum oxide/zirconium-doped hafnium oxide for neuromorphic computing
H Ryu, H Wu, F Rao, W Zhu
Scientific reports 9 (1), 20383, 2019
Mandates: US National Science Foundation, US Department of Defense
Exploring new metal electrodes for ferroelectric aluminum-doped hafnium oxide
H Ryu, K Xu, J Kim, S Kang, J Guo, W Zhu
IEEE Transactions on Electron Devices 66 (5), 2359-2364, 2019
Mandates: US National Science Foundation, US Department of Defense
Empowering 2D nanoelectronics via ferroelectricity
H Ryu, K Xu, D Li, X Hong, W Zhu
Applied Physics Letters 117 (8), 2020
Mandates: US National Science Foundation, US Department of Energy, US Department of …
Strong Temperature Effect on the Ferroelectric Properties of CuInP2S6 and Its Heterostructures
Z Zhao, K Xu, H Ryu, W Zhu
ACS applied materials & interfaces 12 (46), 51820-51826, 2020
Mandates: US National Science Foundation, US Department of Defense
High temperature operation of E-mode and D-mode AlGaN/GaN MIS-HEMTs with recessed gates
H Lee, H Ryu, J Kang, W Zhu
IEEE Journal of the Electron Devices Society 11, 167-173, 2023
Mandates: US Department of Defense
Stable high temperature operation of p-GaN gate HEMT with etch-stop layer
H Lee, H Ryu, J Kang, W Zhu
IEEE Electron Device Letters, 2024
Mandates: US Department of Defense
Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation
H Lee, H Ryu, W Zhu
Applied Physics Letters 122 (11), 2023
Mandates: US Department of Defense
Nonconventional analog comparators based on graphene and ferroelectric hafnium zirconium oxide
J Liu, H Ryu, W Zhu
IEEE Transactions on Electron Devices 68 (3), 1334-1339, 2021
Mandates: US National Science Foundation, US Department of Defense
Ferroelectric tunneling junctions for neurosynaptic computing
H Ryu, H Wu, F Rao, W Zhu
2019 Device Research Conference (DRC), 191-192, 2019
Mandates: US National Science Foundation, US Department of Defense
Ferroelectric Zr-doped Hafnium Oxide for Memory Applications
H Ryu, K Xu, D Kim, F Rao, W Zhu
49th IEEE Semiconductor Interface Specialists Conference 2018, 2018
Mandates: US National Science Foundation
Nanoscale Devices Based on Two-dimensional Materials and Ferroelectric Materials
Z Yao, H Ryu, K Xu, J Liu, Y Cai, Y Yan, W Zhu
2018 14th IEEE International Conference on Solid-State and Integrated …, 2018
Mandates: US National Science Foundation
Ferroelectric Aluminum-Doped Hafnium Oxide for Memory Applications
H Ryu, K Xu, J Guo, W Zhu
2018 76th Device Research Conference (DRC), 1-2, 2018
Mandates: US National Science Foundation
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