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Nicholas LiCausi
Nicholas LiCausi
PsiQuantum, GLOBALFOUNDRIES, Rensselaer Polytechnic Institute
Verified email at psiquantum.com
Title
Cited by
Cited by
Year
Forming a diffusion break during a RMG process
D Pham, Z Hu, A Wei, NV LiCausi
US Patent 8,846,491, 2014
842014
Methods of forming FinFET devices with alternative channel materials
WP Maszara, AP Jacob, NV LiCausi, JA Fronheiser, K Akarvardar
US Patent 8,673,718, 2014
692014
Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency
R Dahal, KC Huang, J Clinton, N LiCausi, JQ Lu, Y Danon, I Bhat
Applied Physics Letters 100 (24), 2012
622012
Methods of forming SRAM devices using sidewall image transfer techniques
NV LiCausi
US Patent 8,669,186, 2014
592014
Methods for fabricating integrated circuits having confined epitaxial growth regions
N LiCausi, J Fronheiser, ET Ryan
US Patent 8,815,685, 2014
502014
FINFET fin height control
NV LiCausi
US Patent 9,530,654, 2016
482016
Self aligned buried power rail
NV LiCausi, G Bouche, LW Liebmann
US Patent 10,475,692, 2019
422019
Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
BD Briggs, CB Peethala, DL Rath, J Lee, S Nguyen, NV LiCausi, ...
2017 IEEE International Electron Devices Meeting (IEDM), 14.2. 1-14.2. 4, 2017
392017
Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices
R Xie, VK Kamineni, AF Bello, NV LiCausi, W Wang, M Wedlake, ...
US Patent 9,093,302, 2015
392015
Methods of patterning features in a structure using multiple sidewall image transfer technique
NV LiCausi
US Patent 8,557,675, 2013
332013
Methods of epitaxial FinFET
N LiCausi, W Jeremy
US Patent 8,481,410, 2013
332013
Method for manufacturing fully aligned via structures having relaxed gapfills
NV LiCausi, ET Ryan
US Patent 10,177,028, 2019
322019
A novel solid state self-powered neutron detector
N LiCausi, J Dingley, Y Danon, JQ Lu, IB Bhat
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X 7079, 65-76, 2008
312008
Biaxial CdTe/CaF2 films growth on amorphous surface
W Yuan, F Tang, HF Li, T Parker, N LiCausi, TM Lu, I Bhat, GC Wang, ...
Thin Solid Films 517 (24), 6623-6628, 2009
262009
Methods of forming an air gap adjacent a gate of a transistor and a gate contact above the active region of the transistor
R Xie, L Liebmann, N Cave, A Labonte, N LiCausi, G Bouche, C Park
US Patent 10,211,100, 2019
252019
An evaluation of Fuchs-Sondheimer and Mayadas-Shatzkes models below 14nm node wide lines
RS Smith, ET Ryan, CK Hu, K Motoyama, N Lanzillo, D Metzler, L Jiang, ...
AIP Advances 9 (2), 2019
252019
Boron filling of high aspect ratio holes by chemical vapor deposition for solid-state neutron detector applications
KC Huang, R Dahal, N LiCausi, JJQ Lu, Y Danon, IB Bhat
Journal of Vacuum Science & Technology B 30 (5), 2012
252012
Methods of FinFET height control
N LiCausi, W Jeremy
US Patent 8,476,137, 2013
222013
Towards high efficiency solid-state thermal and fast neutron detectors
Y Danon, J Clinton, KC Huang, N LiCausi, R Dahal, JJQ Lu, I Bhat
Journal of Instrumentation 7 (03), C03014, 2012
222012
Apparatus and method for forming interconnection lines having variable pitch and variable widths
G Bouche, NV Licausi
US Patent 10,043,703, 2018
202018
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