| Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002 | 1437 | 2002 |
| Binary copper oxide semiconductors: From materials towards devices BK Meyer, A Polity, D Reppin, M Becker, P Hering, PJ Klar, T Sander, ... physica status solidi (b) 249 (8), 1487-1509, 2012 | 816 | 2012 |
| pH response of GaN surfaces and its application for pH-sensitive field-effect transistors G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff Applied Physics Letters 83 (1), 177-179, 2003 | 370 | 2003 |
| Playing with polarity M Stutzmann, O Ambacher, M Eickhoff, U Karrer, A Lima Pimenta, ... physica status solidi (b) 228 (2), 505-512, 2001 | 294 | 2001 |
| Gas sensitive GaN/AlGaN-heterostructures J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann Sensors and Actuators B: Chemical 87 (3), 425-430, 2002 | 280 | 2002 |
| Hydrogen response mechanism of Pt–GaN Schottky diodes J Schalwig, G Müller, U Karrer, M Eickhoff, O Ambacher, M Stutzmann, ... Applied Physics Letters 80 (7), 1222-1224, 2002 | 266 | 2002 |
| GaN-based heterostructures for sensor applications M Stutzmann, G Steinhoff, M Eickhoff, O Ambacher, CE Nebel, J Schalwig, ... Diamond and related materials 11 (3-6), 886-891, 2002 | 250 | 2002 |
| Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis M De La Mata, C Magen, J Gazquez, MIB Utama, M Heiss, S Lopatin, ... Nano letters 12 (5), 2579-2586, 2012 | 204 | 2012 |
| Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy-The influence of Si-and Mg-doping F Furtmayr, M Vielemeyer, M Stutzmann, J Arbiol, S Estradé, F Peirò, ... Journal of Applied Physics 104 (3), 2008 | 199 | 2008 |
| AlxGa1–xN—A new material system for biosensors G Steinhoff, O Purrucker, M Tanaka, M Stutzmann, M Eickhoff Advanced Functional Materials 13 (11), 841-846, 2003 | 199 | 2003 |
| Direct biofunctionalization of semiconductors: A survey M Stutzmann, JA Garrido, M Eickhoff, MS Brandt physica status solidi (a) 203 (14), 3424-3437, 2006 | 192 | 2006 |
| Recording of cell action potentials with AlGaN∕ GaN field-effect transistors G Steinhoff, B Baur, G Wrobel, S Ingebrandt, A Offenhäusser, A Dadgar, ... Applied Physics Letters 86 (3), 2005 | 185 | 2005 |
| Tin-Assisted Synthesis of by Molecular Beam Epitaxy M Kracht, A Karg, J Schörmann, M Weinhold, D Zink, F Michel, M Rohnke, ... Physical Review Applied 8 (5), 054002, 2017 | 172 | 2017 |
| Chemical functionalization of GaN and AlN surfaces B Baur, G Steinhoff, J Hernando, O Purrucker, M Tanaka, B Nickel, ... Applied Physics Letters 87 (26), 2005 | 170 | 2005 |
| Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures–Part B: Sensor applications M Eickhoff, J Schalwig, G Steinhoff, O Weidemann, L Görgens, ... physica status solidi (c), 1908-1918, 2003 | 163 | 2003 |
| Group III-nitride-based gas sensors for combustion monitoring J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann Materials Science and Engineering: B 93 (1-3), 207-214, 2002 | 137 | 2002 |
| Influence of surface oxides on hydrogen-sensitive Pd: GaN Schottky diodes O Weidemann, M Hermann, G Steinhoff, H Wingbrant, A Lloyd Spetz, ... Applied Physics Letters 83 (4), 773-775, 2003 | 135 | 2003 |
| Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy TA Wassner, B Laumer, S Maier, A Laufer, BK Meyer, M Stutzmann, ... Journal of Applied Physics 105 (2), 2009 | 131 | 2009 |
| Optical properties of Si-and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy F Furtmayr, M Vielemeyer, M Stutzmann, A Laufer, BK Meyer, M Eickhoff Journal of Applied Physics 104 (7), 2008 | 131 | 2008 |
| AlN/diamond heterojunction diodes CR Miskys, JA Garrido, CE Nebel, M Hermann, O Ambacher, M Eickhoff, ... Applied physics letters 82 (2), 290-292, 2003 | 129 | 2003 |
Jordi ArbiolICREA and Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BISTVerified email at icrea.cat
