| Stiffness transitions in glasses from Raman scattering and temperature-modulated differential scanning calorimetry D Selvanathan, WJ Bresser, P Boolchand Physical Review B 61 (22), 15061, 2000 | 249 | 2000 |
| Onset of Rigidity in Steps in Chalcogenide Glasses: The Intermediate Phase P Boolchand, D Selvanathan, Y Wang, DG Georgiev, WJ Bresser Properties and Applications of Amorphous Materials, 97-132, 2001 | 193 | 2001 |
| Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on V Kumar, L Zhou, D Selvanathan, I Adesida Journal of applied physics 92 (3), 1712-1714, 2002 | 185 | 2002 |
| Comparative study of Ti∕ Al∕ Mo∕ Au, Mo∕ Al∕ Mo∕ Au, and V∕ Al∕ Mo∕ Au ohmic contacts to AlGaN∕ GaN heterostructures D Selvanathan, FM Mohammed, A Tesfayesus, I Adesida Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 133 | 2004 |
| Thermally reversing window and stiffness transitions in chalcogenide glasses D Selvanathan, WJ Bresser, P Boolchand, B Goodman Solid state communications 111 (11), 619-624, 1999 | 110 | 1999 |
| Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope JH Jang, W Zhao, JW Bae, D Selvanathan, SL Rommel, I Adesida, ... Applied physics letters 83 (20), 4116-4118, 2003 | 97 | 2003 |
| Low resistance Ti/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructure field effect transistors D Selvanathan, L Zhou, V Kumar, I Adesida physica status solidi (a) 194 (2), 583-586, 2002 | 78 | 2002 |
| Ohmic contact formation mechanism of Ta∕ Al∕ Mo∕ Au and Ti∕ Al∕ Mo∕ Au metallizations on AlGaN∕ GaN HEMTs FM Mohammed, L Wang, D Selvanathan, H Hu, I Adesida Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005 | 62 | 2005 |
| Investigation of surface treatment schemes on n-type GaN and Al0. 20Ga0. 80N D Selvanathan, FM Mohammed, JO Bae, I Adesida, KHA Bogart Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005 | 52 | 2005 |
| 0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length A Kuliev, V Kumar, R Schwindt, D Selvanathan, AM Dabiran, P Chow, ... Solid-State Electronics 47 (1), 117-122, 2003 | 42 | 2003 |
| Long-term thermal stability of Ti/Al/Mo/Au ohmic contacts on n-GaN D Selvanathan, L Zhou, V Kumar, I Adesida, N Finnegan Journal of electronic materials 32, 335-340, 2003 | 38 | 2003 |
| Characterisation of iridium Schottky contacts on n-AlxGa1− xN V Kumar, D Selvanathan, A Kuliev, S Kim, J Flynn, I Adesida Electronics Letters 39 (9), 747-748, 2003 | 36 | 2003 |
| Gate recessing of GaN MESFETs using photoelectrochemical wet etching AT Ping, D Selvanathan, C Youtsey, E Piner, J Redwing, I Adesida Electronics Letters 35 (24), 2140-2141, 1999 | 30 | 1999 |
| Ohmic contacts on n-type Al^ sub 0.59^ Ga^ sub 0.41^ N for solar blind detectors D Selvanathan, L Zhou, V Kumar, JP Long, MAL Johnson, JF Schetzina, ... Electronics Letters 38 (14), 1, 2002 | 22 | 2002 |
| Rigidity theory and applications P Boolchand, X Feng, D Selvanathan, WJ Bresser, MF Thorpe, ... Kluwer Academic/Plenum, 1999 | 18 | 1999 |
| Rigidity transition in chalcogenide glasses P Boolchand, X Feng, D Selvanathan, WJ Bresser Rigidity Theory and Applications, 279-295, 2002 | 13 | 2002 |
| Effect of recess length on DC and RF performance of gate-recessed AlGaN/GaN HEMTs A Kuliev, V Kumar, R Schwindt, D Selvanathan, AM Dabiran, P Chow, ... Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 428-435, 2002 | 11 | 2002 |
| WJ Bresser in Properties and Applications of Amorphous Materials, Ed. MF Thorpe, L. Tichy P Boolchand, D Selvanathan, Y Wang, DG Georgiev Kluwer Academic Publishers, Dordrecht, 2001 | 5 | 2001 |
| Ohmic contacts to N-type gallium nitride based semiconductors D Selvanathan University of Illinois at Urbana-Champaign, 2004 | | 2004 |
| Inhomogeneous, disordered, and partially ordered systems-Stiffness transitions in SixSe1-x glasses from Raman scattering and temperature-modulated differential scanning calorimetry D Selvanathan, WJ Bresser, P Boolchand Physical Review-Section B-Condensed Matter 61 (22), 15061-15076, 2000 | | 2000 |
