| Ion-beam-induced amorphization and recrystallization in silicon L Pelaz, LA Marqués, J Barbolla Journal of applied physics 96 (11), 5947-5976, 2004 | 473 | 2004 |
| B diffusion and clustering in ion implanted Si: The role of B cluster precursors L Pelaz, M Jaraiz, GH Gilmer, HJ Gossmann, CS Rafferty, DJ Eaglesham, ... Applied physics letters 70 (17), 2285-2287, 1997 | 282 | 1997 |
| B cluster formation and dissolution in Si: A scenario based on atomistic modeling L Pelaz, GH Gilmer, HJ Gossmann, CS Rafferty, M Jaraiz, J Barbolla Applied physics letters 74 (24), 3657-3659, 1999 | 218 | 1999 |
| Stability of defects in crystalline silicon and their role in amorphization LA Marqués, L Pelaz, J Hernández, J Barbolla, GH Gilmer Physical Review B 64 (4), 045214, 2001 | 163 | 2001 |
| Reduction of transient diffusion from 1–5 keV ion implantation due to surface annihilation of interstitials A Agarwal, HJ Gossmann, DJ Eaglesham, L Pelaz, DC Jacobson, ... Applied physics letters 71 (21), 3141-3143, 1997 | 114 | 1997 |
| Boron-enhanced diffusion of boron from ultralow-energy ion implantation A Agarwal, HJ Gossmann, DJ Eaglesham, SB Herner, AT Fiory, ... Applied physics letters 74 (17), 2435-2437, 1999 | 104 | 1999 |
| Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial LA Marqués, L Pelaz, P Castrillo, J Barbolla Physical Review B—Condensed Matter and Materials Physics 71 (8), 085204, 2005 | 100 | 2005 |
| Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon VC Venezia, TE Haynes, A Agarwal, L Pelaz, HJ Gossmann, ... Applied physics letters 74 (9), 1299-1301, 1999 | 98 | 1999 |
| Atomistic modeling of point and extended defects in crystalline materials M Jaraiz, L Pelaz, E Rubio, J Barbolla, GH Gilmer, DJ Eaglesham, ... MRS Online Proceedings Library (OPL) 532, 43, 1998 | 92 | 1998 |
| Atomistic modeling of amorphization and recrystallization in silicon L Pelaz, LA Marqués, M Aboy, J Barbolla, GH Gilmer Applied physics letters 82 (13), 2038-2040, 2003 | 90 | 2003 |
| Microscopic description of the irradiation-induced amorphization in silicon LA Marqués, L Pelaz, M Aboy, L Enríquez, J Barbolla Physical review letters 91 (13), 135504, 2003 | 86 | 2003 |
| Activation and deactivation of implanted B in Si L Pelaz, VC Venezia, HJ Gossmann, GH Gilmer, AT Fiory, CS Rafferty, ... Applied physics letters 75 (5), 662-664, 1999 | 82 | 1999 |
| Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+ 1” model L Pelaz, GH Gilmer, M Jaraiz, SB Herner, HJ Gossmann, DJ Eaglesham, ... Applied physics letters 73 (10), 1421-1423, 1998 | 76 | 1998 |
| Boron diffusion in amorphous silicon and the role of fluorine R Duffy, VC Venezia, A Heringa, BJ Pawlak, MJP Hopstaken, GCJ Maas, ... Applied physics letters 84 (21), 4283-4285, 2004 | 60 | 2004 |
| Modeling of damage generation mechanisms in silicon at energies below the displacement threshold I Santos, LA Marqués, L Pelaz Physical Review B—Condensed Matter and Materials Physics 74 (17), 174115, 2006 | 58 | 2006 |
| Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion L Pelaz, GH Gilmer, VC Venezia, HJ Gossmann, M Jaraiz, J Barbolla Applied physics letters 74 (14), 2017-2019, 1999 | 57 | 1999 |
| Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon A Agarwal, HJ Gossmann, DJ Eaglesham, L Pelaz, SB Herner, ... Materials Science in Semiconductor Processing 1 (1), 17-25, 1998 | 50 | 1998 |
| Front-end process modeling in silicon L Pelaz, LA Marqués, M Aboy, P López, I Santos The European Physical Journal B 72, 323-359, 2009 | 49 | 2009 |
| Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles M Aboy, L Pelaz, LA Marqués, J Barbolla, A Mokhberi, Y Takamura, ... Applied physics letters 83 (20), 4166-4168, 2003 | 45 | 2003 |
| Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions A Agarwal, DJ Eaglesham, HJ Gossmann, L Pelaz, SB Herner, ... International Electron Devices Meeting. IEDM Technical Digest, 467-470, 1997 | 45 | 1997 |
