| Electronic and optical properties of quantum dots on InP(100) and substrates: Theory and experiment C Cornet, A Schliwa, J Even, F Doré, C Celebi, A Létoublon, E Macé, ... Physical Review B—Condensed Matter and Materials Physics 74 (3), 035312, 2006 | 106 | 2006 |
| Analysis of the Double Laser Emission Occurring in 1.55-InAs–InP (113)B Quantum-Dot Lasers K Veselinov, F Grillot, C Cornet, J Even, A Bekiarski, M Gioannini, ... IEEE Journal of Quantum Electronics 43 (9), 810-816, 2007 | 86 | 2007 |
| Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells S Almosni, C Robert, T Nguyen Thanh, C Cornet, A Létoublon, T Quinci, ... Journal of applied physics 113 (12), 2013 | 78 | 2013 |
| Universal description of III-V/Si epitaxial growth processes I Lucci, S Charbonnier, L Pedesseau, M Vallet, L Cerutti, JB Rodriguez, ... Physical review materials 2 (6), 060401, 2018 | 74 | 2018 |
| Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster T Quinci, J Kuyyalil, TN Thanh, YP Wang, S Almosni, A Létoublon, ... Journal of Crystal Growth 380, 157-162, 2013 | 53 | 2013 |
| Integrated lasers on silicon C Cornet, Y Léger, C Robert Elsevier, 2016 | 52 | 2016 |
| Electronic, optical, and structural properties of (In, Ga) As/GaP quantum dots C Robert, C Cornet, P Turban, T Nguyen Thanh, MO Nestoklon, J Even, ... Physical Review B—Condensed Matter and Materials Physics 86 (20), 205316, 2012 | 50 | 2012 |
| Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon T Nguyen Thanh, C Robert, W Guo, A Létoublon, C Cornet, G Elias, ... Journal of applied physics 112 (5), 2012 | 47 | 2012 |
| Room temperature operation of GaAsP (N)/GaP (N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen C Robert, A Bondi, TN Thanh, J Even, C Cornet, O Durand, JP Burin, ... Applied Physics Letters 98 (25), 2011 | 47 | 2011 |
| X-ray study of antiphase domains and their stability in MBE grown GaP on Si A Létoublon, W Guo, C Cornet, A Boulle, M Véron, A Bondi, O Durand, ... Journal of Crystal Growth 323 (1), 409-412, 2011 | 46 | 2011 |
| Approach to wetting-layer-assisted lateral coupling of quantum dots C Cornet, C Platz, P Caroff, J Even, C Labbé, H Folliot, A Le Corre, ... Physical Review B—Condensed Matter and Materials Physics 72 (3), 035342, 2005 | 45 | 2005 |
| Zinc-blende group III-V/group IV epitaxy: Importance of the miscut C Cornet, S Charbonnier, I Lucci, L Chen, A Létoublon, A Alvarez, ... Physical Review Materials 4 (5), 053401, 2020 | 44 | 2020 |
| Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering W Guo, A Bondi, C Cornet, A Létoublon, O Durand, T Rohel, ... Applied Surface Science 258 (7), 2808-2815, 2012 | 40 | 2012 |
| Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells S Almosni, P Rale, C Cornet, M Perrin, L Lombez, A Létoublon, ... Solar Energy Materials and Solar Cells 147, 53-60, 2016 | 39 | 2016 |
| Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate A Rolland, L Pedesseau, J Even, S Almosni, C Robert, C Cornet, ... Optical and Quantum Electronics 46, 1397-1403, 2014 | 39 | 2014 |
| Computational analysis of hybrid perovskite on silicon 2-T tandem solar cells based on a Si tunnel junction A Rolland, L Pedesseau, M Kepenekian, C Katan, Y Huang, S Wang, ... Optical and Quantum Electronics 50, 1-13, 2018 | 38 | 2018 |
| Atomistic calculations of Ga (NAsP)/GaP (N) quantum wells on silicon substrate: band structure and optical gain C Robert, M Perrin, C Cornet, J Even, JM Jancu Applied Physics Letters 100 (11), 2012 | 37 | 2012 |
| Room temperature photoluminescence of high density (In, Ga) As/GaP quantum dots T Nguyen Thanh, C Robert, C Cornet, M Perrin, JM Jancu, N Bertru, ... Applied Physics Letters 99 (14), 2011 | 37 | 2011 |
| Quantitative investigations of optical absorption in InAs∕ InP (311) B quantum dots emitting at 1.55 μm wavelength C Cornet, C Labbé, H Folliot, N Bertru, O Dehaese, J Even, A Le Corre, ... Applied physics letters 85 (23), 5685-5687, 2004 | 37 | 2004 |
| Crystal phase control during epitaxial hybridization of III‐V semiconductors with silicon M Rio Calvo, JB Rodriguez, C Cornet, L Cerutti, M Ramonda, A Trampert, ... Advanced Electronic Materials 8 (1), 2100777, 2022 | 36 | 2022 |
Olivier DURANDINSA de RennesVerified email at insa-rennes.fr
