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Parameswari Raju
Parameswari Raju
Device Engineer
Verified email at gmu.edu
Title
Cited by
Cited by
Year
Semiconductor materials and devices for gas sensors
P Raju, Q Li
Journal of The Electrochemical Society 169 (5), 057518, 2022
872022
Graphene-Integrated Negative Quantum Capacitance Field-Effect Transistor With Sub-60-mV/dec Switching
H Zhu, Y Yang, X Zhu, P Raju, DE Ioannou, Q Li
IEEE Transactions on Electron Devices, 2023
42023
Steep-slope negative quantum capacitance field-effect transistor
Y Yang, K Zhang, Y Gu, P Raju, Q Li, L Ji, L Chen, DE Ioannou, Q Sun, ...
2022 International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2022
32022
Steep-slope transistors enabled with 2D quantum coupling stacks
P Raju, H Zhu, Y Yang, K Zhang, D Ioannou, Q Li
Nanotechnology 34 (5), 055001, 2022
22022
Design and Simulation of Tunneling Diodes with 2D Insulators for Rectenna Switches
E Li, P Raju, E Zhao
Materials 17 (4), 953, 2024
12024
Analysis of distributed conformal antennas on a moving platform
R Parameswar, PH Rao, KP Ray, N Balakrishnan
2011 IEEE Applied Electromagnetics Conference (AEMC), 1-4, 2011
12011
Fast switching transistors
P Raju, Q Li
US Patent App. 18/541,831, 2024
2024
Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold Slope
P Raju, H Xu, H Zhu, DE Ioannou, Q Li
IEEE Transactions on Electron Devices, 2024
2024
Photoactivated In2O3-GaN Gas Sensors for Monitoring NO2 with High Sensitivity and Ultralow Operating Power at Room Temperature
J Rambeloson, DE Ioannou, P Raju, X Wang, A Motayed, HJ Yun, Q Li
Chemosensors 10 (10), 405, 2022
2022
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