chenming hu

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Tsu-Jae King LiuUniversity of CaliforniaVerified email at eecs.berkeley.edu
Yee-Chia YeoNational University of SingaporeVerified email at nus.edu.sg
Sayeef SalahuddinTSMC Distinguished Professor of EECS, University of California, BerkeleyVerified email at berkeley.edu
Leland ChangIBMVerified email at us.ibm.com
Jeffrey Bokor Professor of electrical engineering and computer sciences, University of California, BerkeleyVerified email at eecs.berkeley.edu
Mansun ChanChair Professor, HKUSTVerified email at ust.hk
Ali M NIKNEJADUC BerkeleyVerified email at berkeley.edu
Yang-Kyu ChoiProfessor of Electrical Engineering, KAISTVerified email at ee.kaist.ac.kr
AssaderaghiSiTimeVerified email at sitime.com
Darsen LuNCKUVerified email at cal.berkeley.edu
Hideki TakeuchiAtomeraVerified email at atomera.com
Dennis SylvesterProfessor of Electrical Engineering and Computer Science, University of MichiganVerified email at umich.edu
Vivek SubramanianEcole polytechnique Federale de Lausanne (EPFL)Verified email at epfl.ch
Sriramkumar VenugopalanSemiconductors ProfessionalVerified email at eecs.berkeley.edu
Michael OrshanskyUniversity of Texas at AustinVerified email at utexas.edu
Yu CaoProfessor, University of MinnesotaVerified email at umn.edu
Pin SuNational Chiao Tung UniversityVerified email at faculty.nctu.edu.tw
Kaustav BanerjeeUC Santa Barbara, Stanford University, UC BerkeleyVerified email at ece.ucsb.edu
Ali JaveyProfessor of Electrical Engineering and Computer Sciences, UC BerkeleyVerified email at berkeley.edu
Stephen E HollandLawrence Berkeley National LaboratoryVerified email at lbl.gov

chenming hu

University of California, Berkeley

Verified email at eecs.berkeley.edu - Homepage

engineering


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FinFET-a self-aligned double-gate MOSFET scalable to 20 nm D Hisamoto, WC Lee, J Kedzierski, H Takeuchi, K Asano, C Kuo, ... IEEE transactions on electron devices 47 (12), 2320-2325, 2000	2399	2000
Hot-electron-induced MOSFET degradation-model, monitor, and improvement C Hu, SC Tam, FC Hsu, PK Ko, TY Chan, KW Terrill IEEE Journal of Solid-State Circuits 20 (1), 295-305, 1985	1985	1985
MoS2 transistors with 1-nanometer gate lengths SB Desai, SR Madhvapathy, AB Sachid, JP Llinas, Q Wang, GH Ahn, ... Science 354 (6308), 99-102, 2016	1561	2016
A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors KK Hung, PK Ko, C Hu, YC Cheng IEEE Transactions on Electron Devices 37 (3), 654-665, 1990	1086	1990
Modern semiconductor devices for integrated circuits C Hu (No Title), 2010	937	2010
FinFET scaling to 10 nm gate length B Yu, L Chang, S Ahmed, H Wang, S Bell, CY Yang, C Tabery, C Ho, ... Digest. International Electron Devices Meeting,, 251-254, 2002	875	2002
Sub 50-nm finfet: Pmos X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999	850	1999
Enhanced ferroelectricity in ultrathin films grown directly on silicon SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ... Nature 580 (7804), 478-482, 2020	727	2020
New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation Y Cao, T Sato, M Orshansky, D Sylvester, C Hu Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No …, 2000	725	2000
Hole injection SiO/sub 2/breakdown model for very low voltage lifetime extrapolation KF Schuegraf, C Hu IEEE transactions on electron devices 41 (5), 761-767, 1994	720	1994
Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture C Hu, TJ King, V Subramanian, L Chang, X Huang, YK Choi, ... US Patent 6,413,802, 2002	693	2002
MOSFET modeling & BSIM3 user’s guide Y Cheng, C Hu Springer Science & Business Media, 2007	654	2007
MOS capacitance measurements for high-leakage thin dielectrics KJ Yang, C Hu IEEE Transactions on Electron Devices 46 (7), 1500-1501, 1999	647	1999
Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI F Assaderaghi, D Sinitsky, SA Parke, J Bokor, PK Ko, C Hu IEEE Transactions on Electron Devices 44 (3), 414-422, 1997	635	1997
Electrical breakdown in thin gate and tunneling oxides IC Chen, SE Holland, C Hu IEEE journal of Solid-state Circuits 20 (1), 333-342, 1985	632	1985
Sub-50 nm P-channel FinFET X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ... IEEE Transactions on Electron Devices 48 (5), 880-886, 2001	621	2001
Lucky-electron model of channel hot-electron injection in MOSFET's S Tam, PK Ko, C Hu IEEE transactions on electron devices 31 (9), 1116-1125, 1984	606	1984
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology YC Yeo, TJ King, C Hu Journal of applied physics 92 (12), 7266-7271, 2002	592	2002
Threshold voltage model for deep-submicrometer MOSFETs ZH Liu, C Hu, JH Huang, TY Chan, MC Jeng, PK Ko, YC Cheng IEEE Transactions on electron devices 40 (1), 86-95, 1993	588	1993
Immersion fluid for immersion lithography, and method of performing immersion lithography YC Yeo, BJ Lin, C Hu US Patent 7,700,267, 2010	537	2010

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