| High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2 S Roy, A Bhattacharyya, P Ranga, H Splawn, J Leach, S Krishnamoorthy IEEE Electron Device Letters 42 (8), 1140-1143, 2021 | 148 | 2021 |
| Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window A Bhattacharyya, P Ranga, S Roy, J Ogle, L Whittaker-Brooks, ... Applied Physics Letters 117 (14), 2020 | 95 | 2020 |
| Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm² A Bhattacharyya, P Ranga, S Roy, C Peterson, F Alema, G Seryogin, ... IEEE Electron Device Letters 42 (9), 1272-1275, 2021 | 83 | 2021 |
| 4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm− 2 A Bhattacharyya, S Sharma, F Alema, P Ranga, S Roy, C Peterson, ... Applied Physics Express 15 (6), 061001, 2022 | 76 | 2022 |
| Si-doped β-(Al0. 26Ga0. 74) 2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy P Ranga, A Rishinaramangalam, J Varley, A Bhattacharyya, D Feezell, ... Applied Physics Express 12 (11), 111004, 2019 | 75 | 2019 |
| Delta-doped β-Ga 2 O 3 thin films and β-(Al 0.26 Ga 0.74) 2 O 3/β-Ga 2 O 3 heterostructures grown by metalorganic vapor-phase epitaxy P Ranga, A Bhattacharyya, A Rishinaramangalam, YK Ooi, MA Scarpulla, ... Applied Physics Express, 2020 | 66 | 2020 |
| Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1− x) 2O3/β-Ga2O3 heterostructure channels P Ranga, A Bhattacharyya, A Chmielewski, S Roy, R Sun, MA Scarpulla, ... Applied Physics Express 14 (2), 025501, 2021 | 64 | 2021 |
| Highly tunable, polarization-engineered two-dimensional electron gas in ε-AlGaO3/ε-Ga2O3 heterostructures P Ranga, SB Cho, R Mishra, S Krishnamoorthy Applied Physics Express 13 (6), 061009, 2020 | 64 | 2020 |
| 130 mA mm− 1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts A Bhattacharyya, S Roy, P Ranga, D Shoemaker, Y Song, JS Lundh, ... Applied Physics Express 14 (7), 076502, 2021 | 62 | 2021 |
| Schottky Barrier Height Engineering in β-Ga2O3 Using SiO2 Interlayer Dielectric A Bhattacharyya, P Ranga, M Saleh, S Roy, MA Scarpulla, KG Lynn, ... IEEE Journal of the Electron Devices Society 8, 286-294, 2020 | 57 | 2020 |
| Electro-thermal co-design of β-(AlxGa1-x) 2O3/Ga2O3 modulation doped field effect transistors B Chatterjee, Y Song, JS Lundh, Y Zhang, Z Xia, Z Islam, J Leach, ... Applied Physics Letters 117 (15), 2020 | 49 | 2020 |
| High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2 A Bhattacharyya, S Roy, P Ranga, C Peterson, S Krishnamoorthy IEEE Electron Device Letters 43 (10), 1637-1640, 2022 | 47 | 2022 |
| The anisotropic quasi-static permittivity of single-crystal β-Ga2O3 measured by terahertz spectroscopy P Gopalan, S Knight, A Chanana, M Stokey, P Ranga, MA Scarpulla, ... Applied Physics Letters 117 (25), 2020 | 47 | 2020 |
| Thermal Conductivity of β-Phase Ga2O3 and (AlxGa1–x)2O3 Heteroepitaxial Thin Films Y Song, P Ranga, Y Zhang, Z Feng, HL Huang, MD Santia, SC Badescu, ... ACS applied materials & interfaces 13 (32), 38477-38490, 2021 | 40 | 2021 |
| Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers A Bhattacharyya, C Peterson, T Itoh, S Roy, J Cooke, S Rebollo, P Ranga, ... APL Materials 11 (2), 2023 | 38 | 2023 |
| Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films J Cooke, P Ranga, J Jesenovec, JS McCloy, S Krishnamoorthy, ... Scientific Reports 12 (1), 3243, 2022 | 36 | 2022 |
| In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition S Roy, AE Chmielewski, A Bhattacharyya, P Ranga, R Sun, MA Scarpulla, ... Advanced Electronic Materials 7 (11), 2100333, 2021 | 34 | 2021 |
| Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy P Ranga, A Bhattacharyya, A Chmielewski, S Roy, N Alem, ... Applied Physics Letters 117 (17), 2020 | 31 | 2020 |
| N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium P Ranga, A Bhattacharyya, L Whittaker-Brooks, MA Scarpulla, ... Journal of Vacuum Science & Technology A 39 (3), 2021 | 26 | 2021 |
| Compensation in (2¯ 01) homoepitaxial β-Ga2O3 thin films grown by metalorganic vapor-phase epitaxy BA Eisner, P Ranga, A Bhattacharyya, S Krishnamoorthy, MA Scarpulla Journal of Applied Physics 128 (19), 2020 | 23 | 2020 |
Sriram KrishnamoorthyUniversity of California, Santa BarbaraVerified email at ucsb.edu