Articles with public access mandates - Da-Shan ShangLearn more
Not available anywhere: 17
Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode
R Cao, B Song, D Shang, Y Yang, Q Luo, S Wu, Y Li, Y Wang, H Lv, Q Liu, ...
IEEE Electron Device Letters 40 (11), 1744-1747, 2019
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Artificial synapse based on van der Waals heterostructures with tunable synaptic functions for neuromorphic computing
C He, J Tang, DS Shang, J Tang, Y Xi, S Wang, N Li, Q Zhang, JK Lu, ...
ACS applied materials & interfaces 12 (10), 11945-11954, 2020
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces
CS Yang, DS Shang, YS Chai, LQ Yan, BG Shen, Y Sun
Physical chemistry chemical physics 18 (18), 12466-12475, 2016
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Fully memristive SNNs with temporal coding for fast and low-power edge computing
X Zhang, Z Wu, J Lu, J Wei, J Lu, J Zhu, J Qiu, R Wang, K Lou, Y Wang, ...
2020 IEEE International Electron Devices Meeting (IEDM), 29.6. 1-29.6. 4, 2020
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory
X Zhao, X Zhang, D Shang, Z Wu, X Xiao, R Chen, C Tang, J Liu, W Li, ...
IEEE Electron Device Letters 40 (4), 554-557, 2019
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Nonvolatile memory and artificial synapse based on the Cu/P (VDF-TrFE)/Ni organic memtranstor
PP Lu, JX Shen, DS Shang, Y Sun
ACS applied materials & interfaces 12 (4), 4673-4677, 2020
Mandates: National Natural Science Foundation of China
Room-temperature magnetoelectric effects in multiferroic Y-type hexaferrites
Y Chang, K Zhai, Y Chai, D Shang, Y Sun
Journal of Physics D: Applied Physics 51 (26), 264002, 2018
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
A 14nm 100Kb 2T1R Transpose RRAM with> 150X resistance ratio enhancement and 27.95% reduction on energy-latency product using low-power near threshold read operation and fast …
L Wang, W Ye, J Lai, J Liu, J Yang, X Si, C Huo, C Dou, X Xu, Q Liu, ...
2021 Symposium on VLSI Technology, 1-2, 2021
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Large pyroelectric and thermal expansion coefficients in the [(CH3) 2NH2] Mn (HCOO) 3 metal-organic framework
Y Ma, J Cong, Y Chai, L Yan, D Shang, Y Sun
Applied Physics Letters 111 (4), 2017
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Electric control of exchange bias in multiferroic hexaferrite
K Zhai, Y Chai, J Cong, D Shang, Y Sun
Physical Review B 98 (14), 144405, 2018
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
A 28-nm RRAM computing-in-memory macro using weighted hybrid 2T1R cell array and reference subtracting sense amplifier for AI edge inference
W Ye, L Wang, Z Zhou, J An, W Li, H Gao, Z Li, J Yue, H Hu, X Xu, J Yang, ...
IEEE Journal of Solid-State Circuits 58 (10), 2839-2850, 2023
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
An organic synaptic transistor with Nafion electrolyte
PP Lu, DS Shang, CS Yang, Y Sun
Journal of Physics D: Applied Physics 53 (48), 485102, 2020
Mandates: National Natural Science Foundation of China
Artificial synaptic device based on a multiferroic heterostructure
PP Lu, JX Shen, DS Shang, Y Sun
Journal of Physics D: Applied Physics 52 (46), 465303, 2019
Mandates: National Natural Science Foundation of China
Realization of complete Boolean logic functions using a single memtranstor
J Shen, P Lu, D Shang, Y Sun
Physical Review Applied 12 (5), 054062, 2019
Mandates: National Natural Science Foundation of China
One transistor one electrolyte-gated transistor for supervised learning in SNNs
J Lu, Y Li, Z Xuan, H Xu, S Wu, Z Wang, S Long, Q Liu, D Shang
IEEE Electron Device Letters 43 (2), 296-299, 2021
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Memristive switching in Cu/Si/Pt cells and its improvement in vacuum environment
D Shang, S Lee, Y Sun
Solid State Ionics 295, 1-6, 2016
Mandates: National Natural Science Foundation of China
Direct measurement of thermoelectric properties of β-MnO2 in its powder form
SP Shen, YS Chai, SG Wang, CS Yang, DS Shang, Y Sun
Applied Physics Letters 110 (2), 2017
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
Available somewhere: 59
All‐solid‐state synaptic transistor with ultralow conductance for neuromorphic computing
CS Yang, DS Shang, N Liu, EJ Fuller, S Agrawal, AA Talin, YQ Li, ...
Advanced Functional Materials 28 (42), 1804170, 2018
Mandates: US Department of Energy, Chinese Academy of Sciences, National Natural …
A synaptic transistor based on quasi‐2D molybdenum oxide
CS Yang, DS Shang, N Liu, G Shi, X Shen, RC Yu, YQ Li, Y Sun
Advanced Materials 29 (27), 1700906, 2017
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
A highly CMOS compatible hafnia-based ferroelectric diode
Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ...
Nature communications 11 (1), 1391, 2020
Mandates: Chinese Academy of Sciences, National Natural Science Foundation of China
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