| Impact of residual carbon on two-dimensional electron gas properties in AlxGa1− xN/GaN heterostructure JT Chen, U Forsberg, E Janzén Applied Physics Letters 102 (19), 2013 | 113 | 2013 |
| A GaN–SiC hybrid material for high-frequency and power electronics JT Chen, J Bergsten, J Lu, E Janzén, M Thorsell, L Hultman, N Rorsman, ... Applied Physics Letters 113 (4), 2018 | 105 | 2018 |
| Dispersive effects in microwave AlGaN/AlN/GaN HEMTs with carbon-doped buffer S Gustafsson, JT Chen, J Bergsten, U Forsberg, M Thorsell, E Janzén, ... IEEE Transactions on Electron Devices 62 (7), 2162-2169, 2015 | 89 | 2015 |
| Electron trapping in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers J Bergsten, M Thorsell, D Adolph, JT Chen, O Kordina, ... IEEE Transactions on Electron Devices 65 (6), 2446-2453, 2018 | 79 | 2018 |
| Room-temperature mobility above 2200 cm2/V· s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure JT Chen, I Persson, D Nilsson, CW Hsu, J Palisaitis, U Forsberg, ... Applied Physics Letters 106 (25), 2015 | 73 | 2015 |
| Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures T Hofmann, P Kühne, S Schöche, T Chen Jr, U Forsberg, E Janzén, ... Applied Physics Letters 101 (19), 2012 | 65 | 2012 |
| Microwave performance of ‘buffer-free’GaN-on-SiC high electron mobility transistors DY Chen, A Malmros, M Thorsell, H Hjelmgren, O Kordina, JT Chen, ... IEEE Electron Device Letters 41 (6), 828-831, 2020 | 63 | 2020 |
| Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface JT Chen, JW Pomeroy, N Rorsman, C Xia, C Virojanadara, U Forsberg, ... Journal of Crystal Growth 428, 54-58, 2015 | 47 | 2015 |
| Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors J Lu, JT Chen, M Dahlqvist, R Kabouche, F Medjdoub, J Rosen, ... Applied Physics Letters 115 (22), 2019 | 46 | 2019 |
| A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs YK Lin, J Bergsten, H Leong, A Malmros, JT Chen, DY Chen, O Kordina, ... Semiconductor Science and Technology 33 (9), 095019, 2018 | 38 | 2018 |
| Properties of two‐dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity‐enhanced THz optical Hall effect N Armakavicius, JT Chen, T Hofmann, S Knight, P Kühne, D Nilsson, ... physica status solidi (c) 13 (5‐6), 369-373, 2016 | 28 | 2016 |
| Performance enhancement of microwave GaN HEMTs without an AlN-exclusion layer using an optimized AlGaN/GaN interface growth process J Bergsten, JT Chen, S Gustafsson, A Malmros, U Forsberg, M Thorsell, ... IEEE Transactions on electron devices 63 (1), 333-338, 2015 | 27 | 2015 |
| Mg-doping and free-hole properties of hot-wall MOCVD GaN A Papamichail, A Kakanakova-Georgieva, EÖ Sveinbjörnsson, ... Journal of Applied Physics 131 (18), 2022 | 20 | 2022 |
| Origin of the anomalous temperature evolution of photoluminescence peak energy in degenerate InN nanocolumns PC Wei, S Chattopadhyay, FS Lin, CM Hsu, S Jou, JT Chen, PJ Huang, ... Optics Express 17 (14), 11690-11697, 2009 | 20 | 2009 |
| Epitaxial Growth of InN Films by Molecular-Beam Epitaxy Using Hydrazoic Acid (HN3) as an Efficient Nitrogen Source JT Chen, CL Hsiao, HC Hsu, CT Wu, CL Yeh, PC Wei, LC Chen, KH Chen The Journal of Physical Chemistry A 111 (29), 6755-6759, 2007 | 20 | 2007 |
| High voltage and low leakage GaN-on-Sic MISHEMTs on a “buffer-free” heterostructure B Hult, M Thorsell, JT Chen, N Rorsman IEEE Electron Device Letters 43 (5), 781-784, 2022 | 19 | 2022 |
| Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates JT Chen, CW Hsu, U Forsberg, E Janzén Journal of Applied Physics 117 (8), 2015 | 19 | 2015 |
| N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality H Zhang, PP Paskov, O Kordina, JT Chen, V Darakchieva Physica B: Condensed Matter 580, 411819, 2020 | 16 | 2020 |
| Enhanced mobility in InAlN/AlN/GaN HEMTs using a GaN interlayer A Malmros, JT Chen, H Hjelmgren, J Lu, L Hultman, O Kordina, ... IEEE Transactions on Electron Devices 66 (7), 2910-2915, 2019 | 15 | 2019 |
| High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28Si12C, Natural and 13C – Enriched 4H-SiC IG Ivanov, M Yazdanfar, B Lundqvist, JT Chen, J Hassan, P Stenberg, ... Materials Science Forum 778, 471-474, 2014 | 15 | 2014 |