| Transfer of GaN LEDs from sapphire to flexible substrates by laser lift-off and contact printing J Chun, Y Hwang, YS Choi, T Jeong, JH Baek, HC Ko, SJ Park IEEE Photonics Technology Letters 24 (23), 2115-2118, 2012 | 87 | 2012 |
| Interferometric imaging using Si3N4 photonic integrated circuits for a SPIDER imager T Su, G Liu, KE Badham, ST Thurman, RL Kendrick, A Duncan, ... Optics express 26 (10), 12801-12812, 2018 | 68 | 2018 |
| Vertically stacked color tunable light-emitting diodes fabricated using wafer bonding and transfer printing J Chun, KJ Lee, YC Leem, WM Kang, T Jeong, JH Baek, HJ Lee, BJ Kim, ... ACS Applied Materials & Interfaces 6 (22), 19482-19487, 2014 | 62 | 2014 |
| Laser lift-off transfer printing of patterned GaN light-emitting diodes from sapphire to flexible substrates using a Cr/Au laser blocking layer J Chun, Y Hwang, YS Choi, JJ Kim, T Jeong, JH Baek, HC Ko, SJ Park Scripta Materialia 77, 13-16, 2014 | 49 | 2014 |
| High-performance photoconductivity and electrical transport of ZnO/ZnS core/shell nanowires for multifunctional nanodevice applications S Jeong, M Choe, JW Kang, MW Kim, WG Jung, YC Leem, J Chun, ... ACS applied materials & interfaces 6 (9), 6170-6176, 2014 | 47 | 2014 |
| Photonic integrated circuit-based imaging system for SPIDER K Badham, RL Kendrick, D Wuchenich, C Ogden, G Chriqui, A Duncan, ... 2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 1-5, 2017 | 31 | 2017 |
| Testbed experiment for SPIDER: a photonic integrated circuit-based interferometric imaging system K Badham, A Duncan, RL Kendrick, D Wuchenich, C Ogden, G Chriqui, ... Advanced Maui Optical and Space Surveillance (AMOS) Technologies Conference, 58, 2017 | 16 | 2017 |
| SPIDER: next generation chip scale imaging sensor update A Duncan, R Kendrick, C Ogden, D Wuchenich, S Thurman, T Su, W Lai, ... Advanced Maui Optical and Space Surveillance Technologies Conference, 6, 2016 | 16 | 2016 |
| Titanium oxide nanotube arrays for high light extraction efficiency of GaN-based vertical light-emitting diodes YC Leem, O Seo, YR Jo, JH Kim, J Chun, BJ Kim, W Lim, YI Kim, SJ Park Nanoscale 8 (19), 10138-10144, 2016 | 14 | 2016 |
| Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer KJ Lee, J Chun, SJ Kim, S Oh, CS Ha, JW Park, SJ Lee, JC Song, ... Optics Express 24 (5), 4391-4398, 2016 | 13 | 2016 |
| Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width J Chun, W Li, A Agarwal, S Chowdhury Advanced Electronic Materials 5 (1), 1800689, 2019 | 10 | 2019 |
| GaN-based lateral and vertical devices M Meneghini, S Chowdhury, J Derluyn, F Medjdoub, D Ji, J Chun, ... Springer Handbook of Semiconductor Devices, 525-578, 2022 | 7 | 2022 |
| Fabrication of glass-free photoelectrodes for dye-sensitized solar cells (DSSCs) by transfer method using ZnO nanorods sacrificial layer H Song, HH Jeong, JH Song, SW Shin, J Chun, SJ Park, YS Won, ... Materials Letters 132, 27-30, 2014 | 6 | 2014 |
| High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion X Wen, KJ Lee, Y Nakazato, J Chun, S Chowdhury Crystals 13 (4), 709, 2023 | 5 | 2023 |
| Scaling study on high-current density low-dispersion GaN vertical FinFETs S Jeong, K Lee, J Chun, R Soman, S Chowdhury IEEE Electron Device Letters 44 (5), 841-844, 2023 | 4 | 2023 |
| Si3N4 photonic integrated circuit for multi-baseline interferometric imaging G Liu, T Su, S Li, J Chun, W Lai, M Prost, C Ogden, ST Thurman, ... 2017 IEEE Photonics Conference (IPC), 51-52, 2017 | 4 | 2017 |
| Printable ultrathin substrates formed on a concave–convex underlayer for highly flexible membrane-type electrode stickers Y Hwang, HA Cho, SH Kim, HS Jang, Y Hyun, JY Chun, SJ Park, HC Ko Soft Matter 8 (29), 7598-7603, 2012 | 4 | 2012 |
| 10 MHz-Switching on GaN Trench CAVET up to 300° C Operation Enabled by High Channel Mobility X Wen, B Shankar, K Lee, H Kasai, M Noshin, J Chun, Y Nakazato, ... IEEE Electron Device Letters, 2024 | 3 | 2024 |
| Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN KJ Lee, Y Nakazato, J Chun, X Wen, C Meng, R Soman, M Noshin, ... Nanotechnology 33 (50), 505704, 2022 | 3 | 2022 |
| First experimental demonstration of monolithic bidirectional switch using GaN current aperture vertical electron transistor (CAVET) X Wen, H Kasai, K Lee, M Noshin, J Chun, S Chowdhury 2024 Device Research Conference (DRC), 1-2, 2024 | 2 | 2024 |
