Atomic Layer GaSe/MoS2 van der Waals Heterostructure Photodiodes with Low Noise and Large Dynamic Range A Islam, J Lee, PXL Feng ACS Photonics 5 (7), 2693-2700, 2018 | 59 | 2018 |
Anisotropic thermal conductivity of suspended black phosphorus probed by opto-thermomechanical resonance spectromicroscopy A Islam, A van den Akker, PXL Feng Nano letters 18 (12), 7683-7691, 2018 | 54 | 2018 |
Ultrawide frequency tuning of atomic layer van der Waals heterostructure electromechanical resonators F Ye, A Islam, T Zhang, PXL Feng Nano Letters 21 (13), 5508-5515, 2021 | 45 | 2021 |
A review on fabrication process of organic light emitting diodes A Islam, M Rabbani, MH Bappy, MAR Miah, N Sakib 2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013 | 45 | 2013 |
Controlling Polarity of MoTe2 Transistors for Monolithic Complementary Logic via Schottky Contact Engineering X Liu, A Islam, J Guo, PXL Feng ACS nano 14 (2), 1457-1467, 2020 | 40 | 2020 |
All-dry transferred single-and few-layer MoS2 field effect transistor with enhanced performance by thermal annealing A Islam, J Lee, PXL Feng Journal of Applied Physics 123 (2), 2018 | 35 | 2018 |
Environmental, thermal, and electrical susceptibility of black phosphorus field effect transistors Z Wang, A Islam, R Yang, X Zheng, PXL Feng Journal of Vacuum Science & Technology B 33 (5), 2015 | 33 | 2015 |
Discerning black phosphorus crystal orientation and anisotropy by polarized reflectance measurement A Islam, W Du, V Pashaei, H Jia, Z Wang, J Lee, GJ Ye, XH Chen, ... ACS applied materials & interfaces 10 (30), 25629-25637, 2018 | 29 | 2018 |
Atomic Layer MoTe2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing X Liu, A Islam, N Yang, B Odhner, MA Tupta, J Guo, PXL Feng ACS nano 15 (12), 19733-19742, 2021 | 22 | 2021 |
Electromechanical coupling and design considerations in single-layer MoS 2 suspended-channel transistors and resonators R Yang, A Islam, PXL Feng Nanoscale 7 (47), 19921-19929, 2015 | 20 | 2015 |
Effects of asymmetric Schottky contacts on photoresponse in tungsten diselenide (WSe2) phototransistor A Islam, PXL Feng Journal of Applied Physics 122 (8), 2017 | 19 | 2017 |
Polarization sensitive black phosphorus nanomechanical resonators A Islam, A van den Akker, PXL Feng Optical Materials Express 9 (2), 526-535, 2019 | 14 | 2019 |
All-electrical transduction of black phosphorus tunable 2D nanoelectromechanical resonators A Islam, J Lee, PXL Feng 2018 IEEE Micro Electro Mechanical Systems (MEMS), 1052-1055, 2018 | 9 | 2018 |
Series active power filter implementation using PQ theory A Islam, MA Abeed, MKM Rabby, MH Rahaman, A Hossain, R Al Nur, ... 2012 International Conference on Informatics, Electronics & Vision (ICIEV …, 2012 | 9 | 2012 |
Few-Layer Mote2 Suspended Channel Transistors and Nanoelectromechanical Resonators X Liu, A Islam, PXL Feng 2019 20th International Conference on Solid-State Sensors, Actuators and …, 2019 | 8 | 2019 |
Designing an all epitaxial 1,550 nm intra-cavity VCSEL using GaInAsN/AlGaInAs in the active region and AlGaAsSb/AlAsSb in top and bottom DBRs A Islam, SI Islam, S Islam Optical and Quantum Electronics 45, 1199-1212, 2013 | 7 | 2013 |
Phase Transition of MoTe2 Controlled in van der Waals Heterostructure Nanoelectromechanical Systems F Ye, A Islam, Y Wang, J Guo, PXL Feng Small 19 (5), 2205327, 2023 | 5 | 2023 |
Black phosphorus NEMS resonant infrared (IR) detector A Islam, J Lee, PXL Feng 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems …, 2020 | 5 | 2020 |
Integrated duo wavelength VCSEL using an electrically pumped GaInAs/AlGaAs 980 nm cavity at the bottom and an optically pumped GaInAs/AlGaInAs 1550 nm cavity on the top SI Islam, A Islam, S Islam International Scholarly Research Notices 2014 (1), 627165, 2014 | 5 | 2014 |
Designing a high speed 1 310 nm AlGaInAs/Al⁃ GaInAs VCSEL using MgO/Si top DBR and GaInAsP/InP bottom DBR A Islam, S Islam American Journal of Optics and Photonics 2 (3), 38-44, 2014 | 5 | 2014 |