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Arnob Islam
Arnob Islam
Intel Corporation
Verified email at case.edu
Title
Cited by
Cited by
Year
Atomic Layer GaSe/MoS2 van der Waals Heterostructure Photodiodes with Low Noise and Large Dynamic Range
A Islam, J Lee, PXL Feng
ACS Photonics 5 (7), 2693-2700, 2018
592018
Anisotropic thermal conductivity of suspended black phosphorus probed by opto-thermomechanical resonance spectromicroscopy
A Islam, A van den Akker, PXL Feng
Nano letters 18 (12), 7683-7691, 2018
542018
Ultrawide frequency tuning of atomic layer van der Waals heterostructure electromechanical resonators
F Ye, A Islam, T Zhang, PXL Feng
Nano Letters 21 (13), 5508-5515, 2021
452021
A review on fabrication process of organic light emitting diodes
A Islam, M Rabbani, MH Bappy, MAR Miah, N Sakib
2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013
452013
Controlling Polarity of MoTe2 Transistors for Monolithic Complementary Logic via Schottky Contact Engineering
X Liu, A Islam, J Guo, PXL Feng
ACS nano 14 (2), 1457-1467, 2020
402020
All-dry transferred single-and few-layer MoS2 field effect transistor with enhanced performance by thermal annealing
A Islam, J Lee, PXL Feng
Journal of Applied Physics 123 (2), 2018
352018
Environmental, thermal, and electrical susceptibility of black phosphorus field effect transistors
Z Wang, A Islam, R Yang, X Zheng, PXL Feng
Journal of Vacuum Science & Technology B 33 (5), 2015
332015
Discerning black phosphorus crystal orientation and anisotropy by polarized reflectance measurement
A Islam, W Du, V Pashaei, H Jia, Z Wang, J Lee, GJ Ye, XH Chen, ...
ACS applied materials & interfaces 10 (30), 25629-25637, 2018
292018
Atomic Layer MoTe2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing
X Liu, A Islam, N Yang, B Odhner, MA Tupta, J Guo, PXL Feng
ACS nano 15 (12), 19733-19742, 2021
222021
Electromechanical coupling and design considerations in single-layer MoS 2 suspended-channel transistors and resonators
R Yang, A Islam, PXL Feng
Nanoscale 7 (47), 19921-19929, 2015
202015
Effects of asymmetric Schottky contacts on photoresponse in tungsten diselenide (WSe2) phototransistor
A Islam, PXL Feng
Journal of Applied Physics 122 (8), 2017
192017
Polarization sensitive black phosphorus nanomechanical resonators
A Islam, A van den Akker, PXL Feng
Optical Materials Express 9 (2), 526-535, 2019
142019
All-electrical transduction of black phosphorus tunable 2D nanoelectromechanical resonators
A Islam, J Lee, PXL Feng
2018 IEEE Micro Electro Mechanical Systems (MEMS), 1052-1055, 2018
92018
Series active power filter implementation using PQ theory
A Islam, MA Abeed, MKM Rabby, MH Rahaman, A Hossain, R Al Nur, ...
2012 International Conference on Informatics, Electronics & Vision (ICIEV …, 2012
92012
Few-Layer Mote2 Suspended Channel Transistors and Nanoelectromechanical Resonators
X Liu, A Islam, PXL Feng
2019 20th International Conference on Solid-State Sensors, Actuators and …, 2019
82019
Designing an all epitaxial 1,550 nm intra-cavity VCSEL using GaInAsN/AlGaInAs in the active region and AlGaAsSb/AlAsSb in top and bottom DBRs
A Islam, SI Islam, S Islam
Optical and Quantum Electronics 45, 1199-1212, 2013
72013
Phase Transition of MoTe2 Controlled in van der Waals Heterostructure Nanoelectromechanical Systems
F Ye, A Islam, Y Wang, J Guo, PXL Feng
Small 19 (5), 2205327, 2023
52023
Black phosphorus NEMS resonant infrared (IR) detector
A Islam, J Lee, PXL Feng
2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems …, 2020
52020
Integrated duo wavelength VCSEL using an electrically pumped GaInAs/AlGaAs 980 nm cavity at the bottom and an optically pumped GaInAs/AlGaInAs 1550 nm cavity on the top
SI Islam, A Islam, S Islam
International Scholarly Research Notices 2014 (1), 627165, 2014
52014
Designing a high speed 1 310 nm AlGaInAs/Al⁃ GaInAs VCSEL using MgO/Si top DBR and GaInAsP/InP bottom DBR
A Islam, S Islam
American Journal of Optics and Photonics 2 (3), 38-44, 2014
52014
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Articles 1–20