| Transient electron transport in wurtzite GaN, InN, and AlN BE Foutz, SK O’Leary, MS Shur, LF Eastman Journal of applied physics 85 (11), 7727-7734, 1999 | 688 | 1999 |
| The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis SK O’Leary, SR Johnson, PK Lim Journal of applied physics 82 (7), 3334-3340, 1997 | 395 | 1997 |
| Electron transport in wurtzite indium nitride SK O’Leary, BE Foutz, MS Shur, UV Bhapkar, LF Eastman Journal of Applied Physics 83 (2), 826-829, 1998 | 392 | 1998 |
| Steady-state and transient electron transport within the III–V nitride semiconductors, GaN, AlN, and InN: a review SK O'leary, BE Foutz, MS Shur, LF Eastman Journal of Materials Science: Materials in Electronics 17, 87-126, 2006 | 177 | 2006 |
| Potential performance of indium-nitride-based devices SK O’Leary, BE Foutz, MS Shur, LF Eastman Applied physics letters 88 (15), 2006 | 113 | 2006 |
| Monte Carlo simulation of electron transport in wurtzite aluminum nitride SK O'Leary, BE Foutz, MS Shur, UV Bhapkar, LF Eastman Solid state communications 105 (10), 621-626, 1998 | 108 | 1998 |
| Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis SK O’Leary, BE Foutz, MS Shur, LF Eastman Applied Physics Letters 87 (22), 2005 | 105 | 2005 |
| The dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the film thickness: αl Experimental limitations and the impact of curvature … TM Mok, SK O’Leary Journal of Applied Physics 102 (11), 2007 | 98 | 2007 |
| Disorder and optical absorption in amorphous silicon and amorphous germanium SK O'Leary, S Zukotynski, JM Perz Journal of non-crystalline solids 210 (2-3), 249-253, 1997 | 97 | 1997 |
| Auger-limited carrier recombination and relaxation in CdSe colloidal quantum wells E Baghani, SK O’Leary, I Fedin, DV Talapin, M Pelton The journal of physical chemistry letters 6 (6), 1032-1036, 2015 | 92 | 2015 |
| On determining the optical gap associated with an amorphous semiconductor: A generalization of the Tauc model SK O'Leary, PK Lim Solid State Communications 104 (1), 17-21, 1997 | 83 | 1997 |
| Optical absorption in amorphous semiconductors SK O’Leary, S Zukotynski, JM Perz Physical Review B 52 (11), 7795, 1995 | 67 | 1995 |
| Semiclassical density-of-states and optical-absorption analysis of amorphous semiconductors SK O’Leary, S Zukotynski, JM Perz Physical Review B 51 (7), 4143, 1995 | 67 | 1995 |
| Nonmonotonic dependence of Auger recombination rate on shell thickness for CdSe/CdS core/shell nanoplatelets M Pelton, JJ Andrews, I Fedin, DV Talapin, H Leng, SK O’Leary Nano Letters 17 (11), 6900-6906, 2017 | 66 | 2017 |
| Recombination of drifting holes with trapped electrons in stabilized a-Se photoconductors: Langevin recombination SO Kasap, B Fogal, M Zahangir Kabir, RE Johanson, SK O’Leary Applied physics letters 84 (11), 1991-1993, 2004 | 52 | 2004 |
| The Urbach focus and hydrogenated amorphous silicon F Orapunt, SK O'Leary Applied Physics Letters 84 (4), 523, 2004 | 52 | 2004 |
| On defining the optical gap of an amorphous semiconductor: an empirical calibration for the case of hydrogenated amorphous silicon DE Sweenor, SK O’Leary, BE Foutz Solid state communications 110 (5), 281-286, 1999 | 51 | 1999 |
| Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review WA Hadi, MS Shur, SK O’Leary Journal of Materials Science: Materials in Electronics 25, 4675-4713, 2014 | 50 | 2014 |
| Optical absorption, disorder, and the disorderless limit in amorphous semiconductors SK O’Leary Applied Physics Letters 72 (11), 1332-1334, 1998 | 47 | 1998 |
| Disorder and the optical properties of amorphous silicon grown by molecular beam epitaxy BJ Fogal, SK O'Leary, DJ Lockwood, JM Baribeau, M Noël, JC Zwinkels Solid state communications 120 (11), 429-434, 2001 | 46 | 2001 |
