| Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices U Russo, D Ielmini, C Cagli, AL Lacaita IEEE Transactions on Electron Devices 56 (2), 193-200, 2009 | 529 | 2009 |
| Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices U Russo, D Ielmini, C Cagli, AL Lacaita IEEE Transactions on Electron Devices 56 (2), 186-192, 2009 | 441 | 2009 |
| Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories D Ielmini, F Nardi, C Cagli Nanotechnology 22 (25), 254022, 2011 | 271 | 2011 |
| Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM U Russo, D Ielmini, C Cagli, AL Lacaita, S Spiga, C Wiemer, M Perego, ... 2007 IEEE International Electron Devices Meeting, 775-778, 2007 | 268 | 2007 |
| Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories D Ielmini, F Nardi, C Cagli Applied Physics Letters 96 (5), 2010 | 223 | 2010 |
| Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction C Cagli, D Ielmini, F Nardi, AL Lacaita 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 215 | 2008 |
| Quantum-size effects in hafnium-oxide resistive switching S Long, X Lian, C Cagli, X Cartoixa, R Rurali, E Miranda, D Jiménez, ... Applied Physics Letters 102 (18), 2013 | 186 | 2013 |
| Universal reset characteristics of unipolar and bipolar metal-oxide RRAM D Ielmini, F Nardi, C Cagli IEEE Transactions on Electron Devices 58 (10), 3246-3253, 2011 | 171 | 2011 |
| Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM S Long, L Perniola, C Cagli, J Buckley, X Lian, E Miranda, F Pan, M Liu, ... Scientific reports 3 (1), 2929, 2013 | 169 | 2013 |
| Modeling of set/reset operations in NiO-based resistive-switching memory devices C Cagli, F Nardi, D Ielmini IEEE Transactions on electron devices 56 (8), 1712-1720, 2009 | 147 | 2009 |
| Resistance transition in metal oxides induced by electronic threshold switching D Ielmini, C Cagli, F Nardi Applied Physics Letters 94 (6), 2009 | 146 | 2009 |
| Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters Solid-State Electronics 58 (1), 42-47, 2011 | 145 | 2011 |
| Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations C Nail, G Molas, P Blaise, G Piccolboni, B Sklenard, C Cagli, M Bernard, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2016 | 139 | 2016 |
| A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown S Long, X Lian, C Cagli, L Perniola, E Miranda, M Liu, J Suñé IEEE electron device letters 34 (8), 999-1001, 2013 | 139 | 2013 |
| Size-dependent retention time in NiO-based resistive-switching memories D Ielmini, F Nardi, C Cagli, AL Lacaita IEEE Electron Device Letters 31 (4), 353-355, 2010 | 139 | 2010 |
| Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices S Long, X Lian, T Ye, C Cagli, L Perniola, E Miranda, M Liu, J Sune IEEE electron device letters 34 (5), 623-625, 2013 | 130 | 2013 |
| Analysis and modeling of resistive switching statistics S Long, C Cagli, D Ielmini, M Liu, J Sune Journal of Applied Physics 111 (7), 2012 | 124 | 2012 |
| Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ... 2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011 | 110 | 2011 |
| Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures P Calka, E Martinez, V Delaye, D Lafond, G Audoit, D Mariolle, ... Nanotechnology 24 (8), 085706, 2013 | 96 | 2013 |
| Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices D Ielmini, S Spiga, F Nardi, C Cagli, A Lamperti, E Cianci, M Fanciulli Journal of Applied Physics 109 (3), 2011 | 92 | 2011 |
