Articles with public access mandates - Carlo CagliLearn more
Not available anywhere: 9
Reset statistics of NiO-based resistive switching memories
S Long, C Cagli, D Ielmini, M Liu, J Sune
IEEE electron device letters 32 (11), 1570-1572, 2011
Mandates: Government of Spain
Nanowire-based resistive switching memories: devices, operation and scaling
D Ielmini, C Cagli, F Nardi, Y Zhang
Journal of Physics D: Applied Physics 46 (7), 074006, 2013
Mandates: Fondazione Cariplo
Effect of the voltage ramp rate on the set and reset voltages of ReRAM devices
A Rodriguez-Fernandez, C Cagli, L Perniola, J Suñé, E Miranda
Microelectronic Engineering 178, 61-65, 2017
Mandates: European Commission, Government of Spain
Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis
A Rodriguez-Fernandez, C Cagli, L Perniola, J Suñé, E Miranda
Microelectronics Reliability 76, 178-183, 2017
Mandates: European Commission, Government of Spain
Reliability and variability of 1S1R OxRAM-OTS for high density crossbar integration
DA Robayo, G Sassine, JM Lopez, L Grenouillet, A Verdy, G Navarro, ...
2019 IEEE International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2019
Mandates: Agence Nationale de la Recherche
Frequency modulation of conductance level in PCM device for neuromorphic applications
A Trabelsi, C Cagli, T Hirtzlin, O Cueto, MC Cyrille, E Vianello, V Meli, ...
ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC …, 2022
Mandates: European Commission
Cell-based models for the switching statistics of RRAM
S Long, C Cagli, D Ielmini, M Liu, J Suñé
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding, 1-5, 2011
Mandates: Government of Spain
Convolution neural network inference using frequency modulation in computational phase-change memory
A Trabelsi, C Cagli, T Hirtzlin, S Martin, O Billoint, E Vianello, V Sousa, ...
2023 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2023
Mandates: European Commission
Electrical evidence of atomic-size effects in the conduction filament of RRAM
J Suñé, S Long, C Cagli, L Perniola, X Lian, X Cartoixà, R Rurali, ...
2012 IEEE 11th International Conference on Solid-State and Integrated …, 2012
Mandates: Government of Spain
Available somewhere: 13
Quantum-size effects in hafnium-oxide resistive switching
S Long, X Lian, C Cagli, X Cartoixa, R Rurali, E Miranda, D Jiménez, ...
Applied Physics Letters 102 (18), 2013
Mandates: Government of Spain
Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
S Long, L Perniola, C Cagli, J Buckley, X Lian, E Miranda, F Pan, M Liu, ...
Scientific reports 3 (1), 2929, 2013
Mandates: Government of Spain
A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown
S Long, X Lian, C Cagli, L Perniola, E Miranda, M Liu, J Suñé
IEEE electron device letters 34 (8), 999-1001, 2013
Mandates: Government of Spain
Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices
S Long, X Lian, T Ye, C Cagli, L Perniola, E Miranda, M Liu, J Sune
IEEE electron device letters 34 (5), 623-625, 2013
Mandates: Government of Spain
Analysis and modeling of resistive switching statistics
S Long, C Cagli, D Ielmini, M Liu, J Sune
Journal of Applied Physics 111 (7), 2012
Mandates: Government of Spain
High-density 3D monolithically integrated multiple 1T1R multi-level-cell for neural networks
E Esmanhotto, L Brunet, N Castellani, D Bonnet, T Dalgaty, L Grenouillet, ...
2020 IEEE International Electron Devices Meeting (IEDM), 36.5. 1-36.5. 4, 2020
Mandates: Agence Nationale de la Recherche
Characterization of HfO2-based devices with indication of second order memristor effects
A Rodriguez-Fernandez, C Cagli, L Perniola, E Miranda, J Suñé
Microelectronic Engineering 195, 101-106, 2018
Mandates: European Commission, Government of Spain
Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO2-Based ReRAM Devices
A Rodriguez-Fernandez, C Cagli, J Suñé, E Miranda
IEEE Electron Device Letters 39 (5), 656-659, 2018
Mandates: European Commission, Government of Spain
Quantum point contact model of filamentary conduction in resistive switching memories
X Lian, S Long, C Cagli, J Buckley, E Miranda, M Liu, J Suñe
2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012
Mandates: Government of Spain
Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown
S Long, X Lian, C Cagli, L Perniola, E Miranda, D Jiménez, H Lv, Q Liu, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 5A. 6.1-5A. 6.8, 2013
Mandates: Government of Spain
SPICE simulation of 1T1R structures based on a logistic hysteresis operator
GA Patterson, A Rodriguez-Fernandez, J Suñé, E Miranda, C Cagli, ...
2017 Spanish Conference on Electron Devices (CDE), 1-4, 2017
Mandates: Government of Spain
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