Follow
Jin Kuijuan
Jin Kuijuan
Verified email at iphy.ac.cn
Title
Cited by
Cited by
Year
Ultrahigh energy storage in superparaelectric relaxor ferroelectrics
H Pan, S Lan, S Xu, Q Zhang, H Yao, Y Liu, F Meng, EJ Guo, L Gu, D Yi, ...
Science 374 (6563), 100-104, 2021
4832021
A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors
AQ Jiang, C Wang, KJ Jin, XB Liu, JF Scott, CS Hwang, TA Tang, HB Lu, ...
Advanced Materials 23 (10), 1277-1281, 2011
4752011
Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films
C Wang, K Jin, Z Xu, L Wang, C Ge, H Lu, H Guo, M He, G Yang
Applied Physics Letters 98 (19), 2011
4012011
Artificial synapses emulated by an electrolyte‐gated tungsten‐oxide transistor
JT Yang, C Ge, JY Du, HY Huang, M He, C Wang, HB Lu, GZ Yang, KJ Jin
Advanced Materials 30 (34), 1801548, 2018
3812018
Low-threshold topological nanolasers based on the second-order corner state
W Zhang, X Xie, H Hao, J Dang, S Xiao, S Shi, H Ni, Z Niu, C Wang, K Jin, ...
Light: Science & Applications 9 (1), 109, 2020
2652020
Reproducible ultrathin ferroelectric domain switching for high‐performance neuromorphic computing
J Li, C Ge, J Du, C Wang, G Yang, K Jin
Advanced Materials 32 (7), 1905764, 2020
2112020
Photo-induced non-volatile VO2 phase transition for neuromorphic ultraviolet sensors
G Li, D Xie, H Zhong, Z Zhang, X Fu, Q Zhou, Q Li, H Ni, J Wang, E Guo, ...
Nature communications 13 (1), 1729, 2022
2062022
Positive colossal magnetoresistance from interface effect in junction of and
K Jin, H Lu, Q Zhou, K Zhao, B Cheng, Z Chen, Y Zhou, GZ Yang
Physical Review B—Condensed Matter and Materials Physics 71 (18), 184428, 2005
1842005
Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories
Z Xu, K Jin, L Gu, Y Jin, C Ge, C Wang, H Guo, H Lu, R Zhao, G Yang
small 8 (8), 1279-1284, 2012
1742012
A ferrite synaptic transistor with topotactic transformation
C Ge, C Liu, Q Zhou, Q Zhang, J Du, J Li, C Wang, L Gu, G Yang, K Jin
Advanced Materials 31 (19), 1900379, 2019
1622019
Interfacial oxygen vacancies as a potential cause of hysteresis in perovskite solar cells
F Zhang, W Ma, H Guo, Y Zhao, X Shan, K Jin, H Tian, Q Zhao, D Yu, X Lu, ...
Chemistry of Materials 28 (3), 802-812, 2016
1482016
Electrolyte‐gated synaptic transistor with oxygen ions
HY Huang, C Ge, QH Zhang, CX Liu, JY Du, JK Li, C Wang, L Gu, ...
Advanced Functional Materials 29 (29), 1902702, 2019
1322019
Pressure-induced monotonic enhancement of Tc to over 30 K in superconducting Pr0.82Sr0.18NiO2 thin films
NN Wang, MW Yang, Z Yang, KY Chen, H Zhang, QH Zhang, ZH Zhu, ...
Nature communications 13 (1), 4367, 2022
1312022
Effects of interfacial polarization on the dielectric properties of BiFeO3 thin film capacitors
GZ Liu, C Wang, CC Wang, J Qiu, M He, J Xing, KJ Jin, HB Lu, GZ Yang
Applied Physics Letters 92 (12), 2008
1262008
Oxygen vacancy induced room-temperature metal–insulator transition in nickelate films and its potential application in photovoltaics
L Wang, S Dash, L Chang, L You, Y Feng, X He, K Jin, Y Zhou, HG Ong, ...
ACS applied materials & interfaces 8 (15), 9769-9776, 2016
1202016
A robust neuromorphic vision sensor with optical control of ferroelectric switching
J Du, D Xie, Q Zhang, H Zhong, F Meng, X Fu, Q Sun, H Ni, T Li, E Guo, ...
Nano Energy 89, 106439, 2021
1182021
Dember effect induced photovoltage in perovskite pn heterojunctions
KJ Jin, K Zhao, HB Lu, L Liao, GZ Yang
Applied Physics Letters 91 (8), 2007
1162007
High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p–n junctions
HB Lu, SY Dai, ZH Chen, YL Zhou, BL Cheng, KJ Jin, LF Liu, GZ Yang, ...
Applied Physics Letters 86 (3), 2005
1162005
Picosecond photoelectric characteristic in La0. 7Sr0. 3MnO3∕ Si pn junctions
HB Lu, KJ Jin, YH Huang, M He, K Zhao, BL Cheng, ZH Chen, YL Zhou, ...
Applied Physics Letters 86 (24), 2005
1152005
Cavity quantum electrodynamics with second‐order topological corner state
X Xie, W Zhang, X He, S Wu, J Dang, K Peng, F Song, L Yang, H Ni, Z Niu, ...
Laser & Photonics Reviews 14 (8), 1900425, 2020
1062020
The system can't perform the operation now. Try again later.
Articles 1–20