| Implementation of reservoir computing using volatile WOx-based memristor D Kim, J Shin, S Kim Applied Surface Science 599, 153876, 2022 | 47 | 2022 |
| Prospects and applications of volatile memristors D Kim, B Jeon, Y Lee, D Kim, Y Cho, S Kim Applied Physics Letters 121 (1), 2022 | 46 | 2022 |
| Ferroelectric synaptic devices based on CMOS-compatible HfAlO x for neuromorphic and reservoir computing applications D Kim, J Kim, S Yun, J Lee, E Seo, S Kim Nanoscale 15 (18), 8366-8376, 2023 | 33 | 2023 |
| Logic-in-memory application of CMOS compatible silicon nitride memristor D Kim, S Kim, S Kim Chaos, Solitons & Fractals 153, 111540, 2021 | 23 | 2021 |
| Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO x tunnel junction memory J Kim, O Kwon, E Lim, D Kim, S Kim Physical Chemistry Chemical Physics 25 (6), 4588-4597, 2023 | 14 | 2023 |
| Resistive switching characteristics of ZnO-based RRAM on silicon substrate D Kim, J Shin, S Kim Metals 11 (10), 1572, 2021 | 13 | 2021 |
| Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications J Kim, D Kim, KK Min, M Kraatz, T Han, S Kim Advanced Intelligent Systems 5 (8), 2300080, 2023 | 12 | 2023 |
| Effect of interfacial SiO 2 layer thickness on the memory performances in the HfAlO x-based ferroelectric tunnel junction for a neuromorphic system Y Park, J Kim, S Kim, D Kim, W Shim, S Kim Journal of Materials Chemistry C 11 (40), 13886-13896, 2023 | 12 | 2023 |
| Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization S Kim, J Kim, D Kim, J Kim, S Kim APL Materials 11 (10), 2023 | 10 | 2023 |
| HfAlOx 기반 강유전성 터널 접합의 잔류 분극에 어닐링 온도가 주는 영향 김지형， 김다혜， 이윤석， 전범기， 김주리， 소효진， 김성준 대한전자공학회 학술대회, 499-501, 2022 | | 2022 |
