| Integrated Circuits Based on Bilayer MoS2 Transistors H Wang, L Yu, YH Lee, Y Shi, A Hsu, ML Chin, LJ Li, M Dubey, J Kong, ... Nano letters 12 (9), 4674-4680, 2012 | 2042 | 2012 |
| Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition KK Kim, A Hsu, X Jia, SM Kim, Y Shi, M Hofmann, D Nezich, ... Nano letters 12 (1), 161-166, 2012 | 1408 | 2012 |
| Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition Y Shi, C Hamsen, X Jia, KK Kim, A Reina, M Hofmann, AL Hsu, K Zhang, ... Nano letters 10 (10), 4134-4139, 2010 | 1370 | 2010 |
| van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates Y Shi, W Zhou, AY Lu, W Fang, YH Lee, AL Hsu, SM Kim, KK Kim, ... Nano letters 12 (6), 2784-2791, 2012 | 1162 | 2012 |
| Dielectric Screening of Excitons and Trions in Single-Layer MoS2 Y Lin, X Ling, L Yu, S Huang, AL Hsu, YH Lee, J Kong, MS Dresselhaus, ... Nano letters 14 (10), 5569-5576, 2014 | 718 | 2014 |
| Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices KK Kim, A Hsu, X Jia, SM Kim, Y Shi, M Dresselhaus, T Palacios, J Kong ACS nano 6 (10), 8583-8590, 2012 | 616 | 2012 |
| Synthesis of large-area multilayer hexagonal boron nitride for high material performance SM Kim, A Hsu, MH Park, SH Chae, SJ Yun, JS Lee, DH Cho, W Fang, ... Nature communications 6 (1), 8662, 2015 | 593 | 2015 |
| Graphene-based ambipolar RF mixers H Wang, A Hsu, J Wu, J Kong, T Palacios IEEE Electron Device Letters 31 (9), 906-908, 2010 | 327 | 2010 |
| BN/graphene/BN transistors for RF applications H Wang, T Taychatanapat, A Hsu, K Watanabe, T Taniguchi, ... IEEE Electron Device Letters 32 (9), 1209-1211, 2011 | 280 | 2011 |
| Parallel stitching of two-dimensional materials X Ling, Y Lin, Q Ma, Z Wang, Y Song, L Yu, S Huang, W Fang, X Zhang, ... arXiv preprint arXiv:1512.04492, 2015 | 261 | 2015 |
| Synthesis of patched or stacked graphene and hBN flakes: a route to hybrid structure discovery SM Kim, A Hsu, PT Araujo, YH Lee, T Palacios, M Dresselhaus, JC Idrobo, ... Nano letters 13 (3), 933-941, 2013 | 230 | 2013 |
| Applications of graphene devices in RF communications T Palacios, A Hsu, H Wang IEEE Communications Magazine 48 (6), 122-128, 2010 | 223 | 2010 |
| The effect of copper pre-cleaning on graphene synthesis SM Kim, A Hsu, YH Lee, M Dresselhaus, T Palacios, KK Kim, J Kong Nanotechnology 24 (36), 365602, 2013 | 222 | 2013 |
| Impact of graphene interface quality on contact resistance and RF device performance A Hsu, H Wang, KK Kim, J Kong, T Palacios IEEE Electron Device Letters 32 (8), 1008-1010, 2011 | 206 | 2011 |
| Rapid identification of stacking orientation in isotopically labeled chemical-vapor grown bilayer graphene by Raman spectroscopy W Fang, AL Hsu, R Caudillo, Y Song, AG Birdwell, E Zakar, M Kalbac, ... Nano letters 13 (4), 1541-1548, 2013 | 191 | 2013 |
| Impact of chlorine functionalization on high-mobility chemical vapor deposition grown graphene X Zhang, A Hsu, H Wang, Y Song, J Kong, MS Dresselhaus, T Palacios ACS nano 7 (8), 7262-7270, 2013 | 138 | 2013 |
| Asymmetric growth of bilayer graphene on copper enclosures using low-pressure chemical vapor deposition W Fang, AL Hsu, Y Song, AG Birdwell, M Amani, M Dubey, ... ACS nano 8 (6), 6491-6499, 2014 | 137 | 2014 |
| Nanowire Channel InAlN/GaN HEMTs With High Linearity ofand DS Lee, H Wang, A Hsu, M Azize, O Laboutin, Y Cao, JW Johnson, ... IEEE electron device letters 34 (8), 969-971, 2013 | 134 | 2013 |
| Compact virtual-source current–voltage model for top-and back-gated graphene field-effect transistors H Wang, A Hsu, J Kong, DA Antoniadis, T Palacios IEEE Transactions on Electron Devices 58 (5), 1523-1533, 2011 | 131 | 2011 |
| pH sensing properties of graphene solution-gated field-effect transistors B Mailly-Giacchetti, A Hsu, H Wang, V Vinciguerra, F Pappalardo, ... Journal of Applied Physics 114 (8), 2013 | 122 | 2013 |
