| Lasing in direct-bandgap GeSn alloy grown on Si S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ... Nature photonics 9 (2), 88-92, 2015 | 1392 | 2015 |
| Analysis of enhanced light emission from highly strained germanium microbridges MJ Süess, R Geiger, RA Minamisawa, G Schiefler, J Frigerio, D Chrastina, ... Nature Photonics 7 (6), 466-472, 2013 | 494 | 2013 |
| The refractive index of below the band gap: Accurate determination and empirical modeling S Gehrsitz, FK Reinhart, C Gourgon, N Herres, A Vonlanthen, H Sigg Journal of Applied Physics 87 (11), 7825-7837, 2000 | 423 | 2000 |
| Intersubband electroluminescence from silicon-based quantum cascade structures G Dehlinger, L Diehl, U Gennser, H Sigg, J Faist, K Ensslin, ... Science 290 (5500), 2277-2280, 2000 | 383 | 2000 |
| Optically pumped GeSn microdisk lasers on Si D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, ... ACS photonics 3 (7), 1279-1285, 2016 | 267 | 2016 |
| Three-dimensional Si/Ge quantum dot crystals D Grützmacher, T Fromherz, C Dais, J Stangl, E Müller, Y Ekinci, ... Nano letters 7 (10), 3150-3156, 2007 | 233 | 2007 |
| Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K V Reboud, A Gassenq, N Pauc, J Aubin, L Milord, QM Thai, M Bertrand, ... Applied Physics Letters 111 (9), 2017 | 207 | 2017 |
| Bilayer Al wire-grids as broadband and high-performance polarizers Y Ekinci, HH Solak, C David, H Sigg Optics express 14 (6), 2323-2334, 2006 | 205 | 2006 |
| Characterisation of rare earth selective emitters for thermophotovoltaic applications B Bitnar, W Durisch, JC Mayor, H Sigg, HR Tschudi Solar Energy Materials and Solar Cells 73 (3), 221-234, 2002 | 179 | 2002 |
| Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5% RA Minamisawa, MJ Süess, R Spolenak, J Faist, C David, J Gobrecht, ... Nature communications 3 (1), 1096, 2012 | 171 | 2012 |
| GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain J Chrétien, N Pauc, F Armand Pilon, M Bertrand, QM Thai, L Casiez, ... Acs Photonics 6 (10), 2462-2469, 2019 | 155 | 2019 |
| Lasing in strained germanium microbridges FT Armand Pilon, A Lyasota, YM Niquet, V Reboud, V Calvo, N Pauc, ... Nature communications 10 (1), 2724, 2019 | 155 | 2019 |
| Group IV direct band gap photonics: methods, challenges, and opportunities R Geiger, T Zabel, H Sigg Frontiers in Materials 2, 52, 2015 | 150 | 2015 |
| Analysis of polaron effects in the cyclotron resonance of n-GaAs and AlGaAs-GaAs heterojunctions H Sigg, P Wyder, J Perenboom Physical Review B 31 (8), 5253, 1985 | 137 | 1985 |
| Plasmonic radiance: probing structure at the ångström scale with visible light B Gallinet, T Siegfried, H Sigg, P Nordlander, OJF Martin Nano letters 13 (2), 497-503, 2013 | 125 | 2013 |
| Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density<? format?> of Photoexcited Carriers, Doping, and Strain L Carroll, P Friedli, S Neuenschwander, H Sigg, S Cecchi, F Isa, ... Physical review letters 109 (5), 057402, 2012 | 125 | 2012 |
| GeSn/SiGeSn heterostructure and multi quantum well lasers D Stange, N von den Driesch, T Zabel, F Armand-Pilon, D Rainko, ... ACS photonics 5 (11), 4628-4636, 2018 | 124 | 2018 |
| Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs∕ AlInAs quantum-cascade structures S Tsujino, A Borak, E Müller, M Scheinert, CV Falub, H Sigg, ... Applied Physics Letters 86 (6), 2005 | 124 | 2005 |
| Electroluminescence from strain-compensated quantum-cascade structures based on a bound-to-continuum transition L Diehl, S Menteşe, E Müller, D Grützmacher, H Sigg, U Gennser, ... Applied Physics Letters 81 (25), 4700-4702, 2002 | 124 | 2002 |
| Engineering metal adhesion layers that do not deteriorate plasmon resonances T Siegfried, Y Ekinci, OJF Martin, H Sigg ACS nano 7 (3), 2751-2757, 2013 | 109 | 2013 |
