| AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing IEEE Electron Device Letters 29 (7), 661-664, 2008 | 215 | 2008 |
| Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions S Ganguly, J Verma, G Li, T Zimmermann, H Xing, D Jena Applied physics letters 99 (19), 2011 | 194 | 2011 |
| Piezoelectric GaN sensor structures T Zimmermann, M Neuburger, P Benkart, FJ Hernández-Guillén, ... IEEE electron device letters 27 (5), 309-312, 2006 | 141 | 2006 |
| Microfluidic enzymatic biosensing systems: A review S Mross, S Pierrat, T Zimmermann, M Kraft Biosensors and Bioelectronics 70, 376-391, 2015 | 95 | 2015 |
| P-channel InGaN-HFET structure based on polarization doping T Zimmermann, M Neuburger, M Kunze, I Daumiller, A Denisenko, ... IEEE Electron Device Letters 25 (7), 450-452, 2004 | 87 | 2004 |
| Ultra-nano-crystalline/single crystal diamond heterostructure diode T Zimmermann, M Kubovic, A Denisenko, K Janischowsky, OA Williams, ... Diamond and related materials 14 (3-7), 416-420, 2005 | 82 | 2005 |
| Unstrained InAlN/GaN HEMT structure M Neuburger, T Zimmermann, E Kohn, A Dadgar, F Schulze, A Krtschil, ... Proceedings. IEEE Lester Eastman Conference on High Performance Devices …, 2004 | 73 | 2004 |
| Threshold Voltage Control in HEMTs by Work-Function Engineering G Li, T Zimmermann, Y Cao, C Lian, X Xing, R Wang, P Fay, HG Xing, ... IEEE electron device letters 31 (9), 954-956, 2010 | 67 | 2010 |
| Predictive performance of multi-model ensemble forecasts of COVID-19 across European nations K Sherratt, H Gruson, H Johnson, R Niehus, B Prasse, F Sandmann, ... Elife 12, e81916, 2023 | 62 | 2023 |
| Polarization-engineered removal of buffer leakage for GaN transistors Y Cao, T Zimmermann, H Xing, D Jena Applied Physics Letters 96 (4), 2010 | 57 | 2010 |
| Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy J Guo, Y Cao, C Lian, T Zimmermann, G Li, J Verma, X Gao, S Guo, ... physica status solidi (a) 208 (7), 1617-1619, 2011 | 51 | 2011 |
| Integrated multi-sensor system for parallel in-situ monitoring of cell nutrients, metabolites, cell density and pH in biotechnological processes S Mross, T Zimmermann, N Winkin, M Kraft, H Vogt Sensors and Actuators B: Chemical 236, 937-946, 2016 | 30 | 2016 |
| Formation of ohmic contacts to ultra‐thin channel AlN/GaN HEMTs T Zimmermann, D Deen, Y Cao, D Jena, HG Xing physica status solidi c 5 (6), 2030-2032, 2008 | 29 | 2008 |
| Surface stability of InGaN-channel based HFETs M Neuburger, I Daumiller, T Zimmermann, M Kunze, G Koley, ... Electronics Letters 39 (22), 1614-1616, 2003 | 29 | 2003 |
| Nanocrystalline diamond pn-structure grown by Hot-Filament CVD T Zimmermann, K Janischowsky, A Denisenko, FJH Guillén, M Kubovic, ... Diamond and related materials 15 (2-3), 203-206, 2006 | 24 | 2006 |
| Subcritical barrier AlN/GaN E/D‐mode HFETs and inverters T Zimmermann, Y Cao, G Li, G Snider, D Jena, H Xing physica status solidi (a) 208 (7), 1620-1622, 2011 | 23 | 2011 |
| 2.3 nm barrier AlN/GaN HEMTs with insulated gates D Deen, T Zimmermann, Y Cao, D Jena, HG Xing physica status solidi c 5 (6), 2047-2049, 2008 | 22* | 2008 |
| Ultrathin MBE-grown AlN/GaN HEMTs with record high current densities Y Cao, T Zimmermann, D Deen, J Simon, J Bean, N Su, J Zhang, P Fay, ... 2007 International Semiconductor Device Research Symposium, 1-2, 2007 | 22 | 2007 |
| Integrated multi-sensor system for parallel in-situ monitoring of cell nutrients, metabolites and cell mass in biotechnological processes S Mross, T Zimmermann, N Winkin, M Kraft, H Vogt Procedia Engineering 120, 372-375, 2015 | 21 | 2015 |
| Shape memory alloy actuators for silicon microgrippers M Garcés-Schröder, T Zimmermann, C Siemers, M Leester-Schädel, ... Journal of Microelectromechanical Systems 28 (5), 869-881, 2019 | 20 | 2019 |