| High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2 S Roy, A Bhattacharyya, P Ranga, H Splawn, J Leach, S Krishnamoorthy IEEE Electron Device Letters 42 (8), 1140-1143, 2021 | 148 | 2021 |
| Dipeptidase-1 is an adhesion receptor for neutrophil recruitment in lungs and liver SR Choudhury, L Babes, JJ Rahn, BY Ahn, KAR Goring, JC King, A Lau, ... Cell 178 (5), 1205-1221. e17, 2019 | 118 | 2019 |
| Renal immune surveillance and dipeptidase-1 contribute to contrast-induced acute kidney injury A Lau, H Chung, T Komada, JM Platnich, CF Sandall, SR Choudhury, ... The Journal of clinical investigation 128 (7), 2894-2913, 2018 | 105 | 2018 |
| Involvement of TNFα-induced TLR4–NF-κB and TLR4–HIF-1α feed-forward loops in the regulation of inflammatory responses in glioma R Tewari, SR Choudhury, S Ghosh, VS Mehta, E Sen Journal of molecular medicine 90, 67-80, 2012 | 104 | 2012 |
| Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window A Bhattacharyya, P Ranga, S Roy, J Ogle, L Whittaker-Brooks, ... Applied Physics Letters 117 (14), 2020 | 95 | 2020 |
| Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm² A Bhattacharyya, P Ranga, S Roy, C Peterson, F Alema, G Seryogin, ... IEEE Electron Device Letters 42 (9), 1272-1275, 2021 | 83 | 2021 |
| 4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm− 2 A Bhattacharyya, S Sharma, F Alema, P Ranga, S Roy, C Peterson, ... Applied Physics Express 15 (6), 061001, 2022 | 76 | 2022 |
| Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1− x) 2O3/β-Ga2O3 heterostructure channels P Ranga, A Bhattacharyya, A Chmielewski, S Roy, R Sun, MA Scarpulla, ... Applied Physics Express 14 (2), 025501, 2021 | 64 | 2021 |
| 130 mA mm− 1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts A Bhattacharyya, S Roy, P Ranga, D Shoemaker, Y Song, JS Lundh, ... Applied Physics Express 14 (7), 076502, 2021 | 62 | 2021 |
| Schottky Barrier Height Engineering in β-Ga2O3 Using SiO2 Interlayer Dielectric A Bhattacharyya, P Ranga, M Saleh, S Roy, MA Scarpulla, KG Lynn, ... IEEE Journal of the Electron Devices Society 8, 286-294, 2020 | 57 | 2020 |
| 2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate S Roy, A Bhattacharyya, C Peterson, S Krishnamoorthy Applied Physics Letters 122 (15), 2023 | 53 | 2023 |
| High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2 A Bhattacharyya, S Roy, P Ranga, C Peterson, S Krishnamoorthy IEEE Electron Device Letters 43 (10), 1637-1640, 2022 | 47 | 2022 |
| β-Ga₂O₃ Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm² Power Figure of Merit S Roy, A Bhattacharyya, C Peterson, S Krishnamoorthy IEEE Electron Device Letters 43 (12), 2037-2040, 2022 | 43 | 2022 |
| Adaptive shunt filtering control of UPQC for increased nonlinear loads SR Choudhury, A Das, S Anand, S Tungare, Y Sonawane IET Power Electronics 12 (2), 330-336, 2019 | 40 | 2019 |
| Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers A Bhattacharyya, C Peterson, T Itoh, S Roy, J Cooke, S Rebollo, P Ranga, ... APL Materials 11 (2), 2023 | 38 | 2023 |
| Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown S Roy, A Bhattacharyya, S Krishnamoorthy IEEE Transactions on Electron Devices 67 (11), 4842-4848, 2020 | 37 | 2020 |
| In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition S Roy, AE Chmielewski, A Bhattacharyya, P Ranga, R Sun, MA Scarpulla, ... Advanced Electronic Materials 7 (11), 2100333, 2021 | 34 | 2021 |
| Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs Y Song, A Bhattacharyya, A Karim, D Shoemaker, HL Huang, S Roy, ... ACS Applied Materials & Interfaces 15 (5), 7137-7147, 2023 | 31 | 2023 |
| Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy P Ranga, A Bhattacharyya, A Chmielewski, S Roy, N Alem, ... Applied Physics Letters 117 (17), 2020 | 31 | 2020 |
| Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga2O3 and β-(AlxGa1−x)2O3 Films F Alema, C Peterson, A Bhattacharyya, S Roy, S Krishnamoorthy, ... IEEE Electron Device Letters 43 (10), 1649-1652, 2022 | 27 | 2022 |