| Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2 F Ali, F Ahmed, M Taqi, SB Mitta, TD Ngo, DJ Eom, K Watanabe, ... 2D Materials 8 (3), 035027, 2021 | 23 | 2021 |
| Metal–Insulator Transition Driven by Traps in 2D WSe2 Field‐Effect Transistor F Ali, N Ali, M Taqi, TD Ngo, M Lee, H Choi, WK Park, E Hwang, WJ Yoo Advanced Electronic Materials 8 (9), 2200046, 2022 | 13 | 2022 |
| Self‐Powered 2D MoS2/WOx/WSe2 Heterojunction Photodetector Realized by Oxygen Plasma Treatment H Shin, M Taqi, F Ali, S Lee, MS Choi, C Kim, BH Lee, X Liu, J Sun, B Oh, ... Advanced Materials Interfaces 9 (32), 2201785, 2022 | 9 | 2022 |