Nicolas C. Rouger

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Jean-Christophe CrebierCNRS researcher - G2Elab Grenoble FranceVerified email at g2elab.grenoble-inp.fr
Julien PERNOTUniv. Grenoble Alpes - Institut Néel - CNRSVerified email at neel.cnrs.fr
Etienne GheeraertInstitut Néel, University of Grenoble AlpesVerified email at neel.cnrs.fr
Gauthier ChicotVerified email at diamfab.eu
Frédéric RICHARDEAUCNRS Senior Scientist, Director of Research - Lab. LAPLACE - CNRS - University of Toulouse - FranceVerified email at laplace.univ-tlse.fr
Marc CousineauAssociate Professor - LAPLACE, Université de Toulouse, CNRS, Toulouse, FranceVerified email at laplace.univ-tlse.fr
Lukas ChrostowskiThe University of British ColumbiaVerified email at ece.ubc.ca
Pierre-olivier JeanninG2ELabVerified email at g2elab.grenoble-inp.fr
WidiezVerified email at cea.fr
Nazareno DonatoUniversity of Cambridge, Cambridge Microelectronics Ltd.Verified email at cam.ac.uk
Bernardo CougoSenior Expert (Researcher) at IRT Saint-Exupéry, Toulouse FRANCEVerified email at irt-saintexupery.com
Daniel Araujo GayUniversidad de CádizVerified email at gm.uca.es
Tokuyuki TERAJINational Institute for Materials ScienceVerified email at nims.go.jp
Avenas YvanG2Elab - Université de Grenoble - FranceVerified email at grenoble-inp.fr
Robert BoeckMACOM Technology SolutionsVerified email at macom.com
Hitoshi UmezawaNational Institute of Advanced Industrial Science and Technology, Institut Néel/CNRSVerified email at aist.go.jp
Farid MedjdoubIEMN - CNRSVerified email at iemn.fr
Bruno AllardINSA LyonVerified email at insa-lyon.fr
Wei ShiProfessor, Electrical and Computer Engineering, Université LavalVerified email at gel.ulaval.ca

Nicolas C. Rouger

Senior Scientist at Université de Toulouse, LAPLACE, CNRS, INPT, UPS, F-31071 Toulouse, France

Verified email at laplace.univ-tlse.fr - Homepage

Power Electronics Gate Driver Power Semiconductor Devices Integrated Circuits


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Diamond power devices: state of the art, modelling, figures of merit and future perspective N Donato, N Rouger, J Pernot, G Longobardi, F Udrea Journal of Physics D: Applied Physics 53 (9), 093001, 2019	252	2019
Series-coupled silicon racetrack resonators and the Vernier effect: theory and measurement R Boeck, NAF Jaeger, N Rouger, L Chrostowski Optics express 18 (24), 25151-25157, 2010	149	2010
Temperature effects on silicon-on-insulator (SOI) racetrack resonators: A coupled analytic and 2-D finite difference approach N Rouger, L Chrostowski, R Vafaei Journal of Lightwave Technology 28 (9), 1380-1391, 2010	69	2010
Deep-Depletion Mode Boron-Doped Monocrystalline Diamond Metal Oxide Semiconductor Field Effect Transistor TT Pham, J Pernot, G Perez, D Eon, E Gheeraert, N Rouger IEEE Electron Device Letters 38 (11), 1571-1574, 2017	68	2017
Deep depletion concept for diamond MOSFET TT Pham, N Rouger, C Masante, G Chicot, F Udrea, D Eon, E Gheeraert, ... Applied Physics Letters 111 (17), 173503, 2017	66	2017
Loss free gate driver unipolar power supply for high side power transistors JC Crébier, N Rouger IEEE Transactions on Power Electronics 23 (3), 1565-1573, 2008	57	2008
Diamond semiconductor performances in power electronics applications G Perez, A Maréchal, G Chicot, P Lefranc, PO Jeannin, D Eon, N Rouger Diamond and Related Materials 110, 108154, 2020	53	2020
Above 2000 V breakdown voltage at 600 K GaN‐on‐silicon high electron mobility transistors N Herbecq, I Roch‐Jeune, A Linge, M Zegaoui, PO Jeannin, N Rouger, ... physica status solidi (a) 213 (4), 873-877, 2016	50	2016
A gate driver with integrated deadtime controller R Grezaud, F Ayel, N Rouger, JC Crebier IEEE Transactions on Power Electronics 31 (12), 8409-8421, 2016	48	2016
Comprehensive electrical analysis of metal/Al₂O₃/O-terminated diamond capacitance TT Pham, A Maréchal, P Muret, D Eon, E Gheeraert, N Rouger, J Pernot Journal of Applied Physics 123 (16), 161523, 2018	47	2018
Model implementation towards the prediction of J (V) characteristics in diamond bipolar device simulations A Maréchal, N Rouger, JC Crebier, J Pernot, S Koizumi, T Teraji, ... Diamond and Related Materials 43, 34-42, 2014	46	2014
Toward generic fully integratedgate driver power supplies N Rouger, JC Crebier IEEE Transactions on Power Electronics 23 (4), 2106-2114, 2008	45	2008
Optimal drift region for diamond power devices G Chicot, D Eon, N Rouger Diamond and Related Materials 69, 68-73, 2016	42	2016
CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors P Bau, M Cousineau, B Cougo, F Richardeau, N Rouger IEEE Transactions on Power Electronics 35 (12), 13322-13332, 2020	41	2020
Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors C Masante, N Rouger, J Pernot Journal of Physics D: Applied Physics 54 (23), 233002, 2021	36	2021
Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter G Perez, G Chicot, Y Avenas, P Lefranc, PO Jeannin, D Eon, N Rouger Diamond and Related Materials 78, 83-87, 2017	32	2017
Design of Diamond Power Devices: Application to Schottky Barrier Diodes N Rouger, A Maréchal Energies 12 (12), 2387, 2019	30	2019
A CMOS gate driver with ultra-fast dV/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistors P Bau, M Cousineau, B Cougo, F Richardeau, D Colin, N Rouger 2018 14th Conference on Ph. D. Research in Microelectronics and Electronics …, 2018	30	2018
200V, 4MV/cm lateral diamond MOSFET TT Pham, J Pernot, C Masante, D Eon, E Gheeraert, G Chicot, F Udrea, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2017	30	2017
High quality Al₂O₃/(100) oxygen-terminated diamond interface for MOSFETs fabrication TT Pham, M Gutiérrez, C Masante, N Rouger, D Eon, E Gheeraert, ... Applied Physics Letters 112 (10), 102103, 2018	27	2018

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