| Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach RR Pelá, C Caetano, M Marques, LG Ferreira, J Furthmüller, LK Teles Applied Physics Letters 98 (15), 2011 | 218 | 2011 |
| Comparing LDA-1/2, HSE03, HSE06 and G0W0 approaches for band gap calculations of alloys RR Pela, M Marques, LK Teles Journal of Physics: Condensed Matter 27 (50), 505502, 2015 | 97 | 2015 |
| Influence of structure and thermodynamic stability on electronic properties of two-dimensional SiC, SiGe, and GeC alloys I Guilhon, LK Teles, M Marques, RR Pelá, F Bechstedt Physical Review B 92 (7), 075435, 2015 | 66 | 2015 |
| Fast and accurate approximate quasiparticle band structure calculations of ZnO, CdO, and MgO polymorphs CA Ataide, RR Pelá, M Marques, LK Teles, J Furthmüller, F Bechstedt Physical Review B 95 (4), 045126, 2017 | 37 | 2017 |
| GaMnAs: Position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations RR Pelá, M Marques, LG Ferreira, J Furthmüller, LK Teles Applied Physics Letters 100 (20), 2012 | 32 | 2012 |
| General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: The case of the center in diamond B Lucatto, LVC Assali, RR Pela, M Marques, LK Teles Physical Review B 96 (7), 075145, 2017 | 25 | 2017 |
| Combined LDA and LDA-1/2 method to obtain defect formation energies in large silicon supercells F Matusalem, M Ribeiro, Jr, M Marques, RR Pelá, LG Ferreira, LK Teles Physical Review B—Condensed Matter and Materials Physics 88 (22), 224102, 2013 | 24 | 2013 |
| All-electron full-potential implementation of real-time TDDFT in exciting RR Pela, C Draxl Electronic Structure 3 (3), 037001, 2021 | 20 | 2021 |
| The LDA-1/2 technique: Recent developments LG Ferreira, RR Pelá, LK Teles, M Marques, M Ribeiro Jr, J Furthmüller AIP Conference Proceedings 1566 (1), 27-28, 2013 | 19 | 2013 |
| Digital magnetic heterostructures based on GaN using GGA-1/2 approach JPT Santos, M Marques, LG Ferreira, RR Pelá, LK Teles Applied Physics Letters 101 (11), 2012 | 19 | 2012 |
| Probing the LDA-1/2 method as a starting point for calculations R Rodrigues Pela, U Werner, D Nabok, C Draxl Physical Review B 94 (23), 235141, 2016 | 17 | 2016 |
| Electronic and optical properties of core–shell InAlN nanorods: a comparative study via LDA, LDA-1/2, mBJ, HSE06, G 0 W 0 and BSE methods RR Pela, CL Hsiao, L Hultman, J Birch, GK Gueorguiev Physical Chemistry Chemical Physics 26 (9), 7504-7514, 2024 | 16 | 2024 |
| Theoretical study of the indium incorporation into III-V compounds revisited: The role of indium segregation and desorption RR Pelá, LK Teles, M Marques, S Martini Journal of Applied Physics 113 (3), 2013 | 15 | 2013 |
| All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces M Ribeiro, RR Pelá, LK Teles, LG Ferreira, M Marques Journal of Applied Physics 114 (3), 2013 | 14 | 2013 |
| Simulation of a spintronic transistor: A study of its performance RR Pela, LK Teles Journal of magnetism and magnetic materials 321 (8), 984-989, 2009 | 13 | 2009 |
| The lda-1/2 method applied to atoms and molecules R Rodrigues Pela, A Gulans, C Draxl Journal of Chemical Theory and Computation 14 (9), 4678-4686, 2018 | 11 | 2018 |
| Charge transition levels of Mn-doped Si calculated with the GGA-1/2 method F Matusalem, RR Pela, M Marques, LK Teles Physical Review B 90 (22), 224102, 2014 | 11 | 2014 |
| Critical assessment of G0W0 calculations for 2D materials: the example of monolayer MoS2 R Rodrigues Pela, C Vona, S Lubeck, B Alex, I Gonzalez Oliva, C Draxl npj Computational Materials 10 (1), 77, 2024 | 10 | 2024 |
| The LDA-1/2 method implemented in the exciting code RR Pela, A Gulans, C Draxl Computer Physics Communications 220, 263-268, 2017 | 9 | 2017 |
| Spin transistors vs. conventional transistors: what are the benefits? RR Pelá, LK Teles Journal of superconductivity and novel magnetism 23, 61-64, 2010 | 6 | 2010 |
Lara Kühl TelesFull Professor at Instituto Tecnológico de Aeronáutica - ITAVerified email at ita.br