Friedrich Schäffler

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Michael MühlbergerSenior Researcher, Functional Surfaces and Nanostructures, Profactor GmbHVerified email at profactor.at
Moritz BrehmJohannes Kepler University LinzVerified email at jku.at
Gerhard AbstreiterTU München, Walter Schottky Institut, Institute for Advanced StudyVerified email at wsi.tum.de
Gunther SpringholzProfessor for Physics, Johannes Kepler University of Linz, AustriaVerified email at jku.at
Martyna GrydlikJohannes Kepler University LinzVerified email at jku.at
Koike KazutoOsaka Institute of TechnologyVerified email at oit.ac.jp
Erich GornikTU WienVerified email at tuwien.ac.at
Moshe EizenbergTechnion and Guangdong Technion- Israel Institute of TechnologyVerified email at technion.ac.il
Maksym V. KovalenkoETH Zurich and EmpaVerified email at ethz.ch
Roman LeitsmannGruppeneiter AQcomputare, Technical University ChemnitzVerified email at hrz.tu-chemnitz.de
Friedhelm BechstedtProfessor für Festkörpertheorie, Friedrich Schiller Universität JenaVerified email at ifto.physik.uni-jena.de
Rolf HaugLeibniz Universität HannoverVerified email at nano.uni-hannover.de
Maryna BodnarchukEmpa-Swiss Federal Laboratories for Materials Science and TechnologyVerified email at empa.ch
Gottfried StrasserProfessor Materials Engineering for Nanoelectronics, TU WienVerified email at tuwien.ac.at
Thomas BererQorvo IncVerified email at berer.org
Gregor LangerResearch Center for Non-Destructive TestingVerified email at recendt.at
Ulrich (Uli) ZeitlerRadboud University Nijmegen, High Filed Magnet LaboratoryVerified email at science.ru.nl
Amina Taleb IbrahimiCNRS Research Director - Science Director @ Synchrotron SOLEILVerified email at synchrotron-soleil.fr
Joachim KrugProfessor of Theoretical Physics, University of CologneVerified email at thp.uni-koeln.de
Armando RastelliProfessor of Semiconductor Physics, Johannes Kepler University LinzVerified email at jku.at

Friedrich Schäffler

Johannes Kepler University Linz (JKU), Austria

Verified email at jku.at

Semiconductor Physics Division


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High-mobility Si and Ge structures F Schäffler Semiconductor Science and Technology 12 (12), 1515, 1997	1043	1997
Fatty acid salts as stabilizers in size-and shape-controlled nanocrystal synthesis: the case of inverse spinel iron oxide MV Kovalenko, MI Bodnarchuk, RT Lechner, G Hesser, F Schäffler, ... Journal of the American Chemical Society 129 (20), 6352-6353, 2007	491	2007
Stabilization of the nanomorphology of polymer–fullerene “bulk heterojunction” blends using a novel polymerizable fullerene derivative M Drees, H Hoppe, C Winder, H Neugebauer, NS Sariciftci, W Schwinger, ... Journal of Materials Chemistry 15 (48), 5158-5163, 2005	266	2005
A germanium hole spin qubit H Watzinger, J Kukučka, L Vukušić, F Gao, T Wang, F Schäffler, JJ Zhang, ... Nature communications 9 (1), 3902, 2018	259	2018
Colloidal HgTe nanocrystals with widely tunable narrow band gap energies: from telecommunications to molecular vibrations MV Kovalenko, E Kaufmann, D Pachinger, J Roither, M Huber, J Stangl, ... Journal of the American Chemical Society 128 (11), 3516-3517, 2006	248	2006
Efficiency limiting morphological factors of MDMO-PPV: PCBM plastic solar cells H Hoppe, T Glatzel, M Niggemann, W Schwinger, F Schaeffler, A Hinsch, ... Thin solid films 511, 587-592, 2006	215	2006
High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer F Schäffler, D Többen, HJ Herzog, G Abstreiter, B Holländer Semiconductor science and technology 7 (2), 260-266, 1992	194	1992
HIGH-ELECTRON-MOBILITY SI/SIGE HETEROSTRUCTURES - INFLUENCE OF THE RELAXED SIGE BUFFER LAYER F Schaffler, D Toebben, HJ Herzog, et al. Semiconductor Science and Technology 7 (2), 260-266, 1992	182	1992
Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates Z Zhong, A Halilovic, T Fromherz, F Schäffler, G Bauer Applied Physics Letters 82 (26), 4779-4781, 2003	159	2003
Type-II band alignment in Si/ quantum wells from photoluminescence line shifts due to optically induced band-bending effects: Experiment and theory T Baier, U Mantz, K Thonke, R Sauer, F Schäffler, HJ Herzog Physical Review B 50 (20), 15191, 1994	143	1994
Spin Manipulation of Free Two-Dimensional Electrons in Quantum Wells AM Tyryshkin, SA Lyon, W Jantsch, F Schäffler Physical review letters 94 (12), 126802, 2005	134	2005
Lasing from glassy Ge quantum dots in crystalline Si M Grydlik, F Hackl, H Groiss, M Glaser, A Halilovic, T Fromherz, W Jantsch, ... ACS photonics 3 (2), 298-303, 2016	126	2016
Kinetic growth instabilities on vicinal Si (001) surfaces C Schelling, G Springholz, F Schäffler Physical review letters 83 (5), 995, 1999	125	1999
Positioning of self-assembled Ge islands on stripe-patterned Si (001) substrates Z Zhong, A Halilovic, M Mühlberger, F Schäffler, G Bauer Journal of applied physics 93 (10), 6258-6264, 2003	124	2003
Lattice parameter in Si1− yCy epilayers: Deviation from Vegard’s rule M Berti, D De Salvador, AV Drigo, F Romanato, J Stangl, S Zerlauth, ... Applied physics letters 72 (13), 1602-1604, 1998	121	1998
p-type Ge-channel MODFETs with high transconductance grown on Si substrates U Konig, F Schaffler IEEE electron device letters 14 (4), 205-207, 1993	118	1993
Centrosymmetric PbTe∕ CdTe quantum dots coherently embedded by epitaxial precipitation W Heiss, H Groiss, E Kaufmann, G Hesser, M Böberl, G Springholz, ... Applied physics letters 88 (19), 2006	117	2006
Key role of the wetting layer in revealing the hidden path of Ge/Si (001) Stranski-Krastanow growth onset M Brehm, F Montalenti, M Grydlik, G Vastola, H Lichtenberger, N Hrauda, ... Physical Review B—Condensed Matter and Materials Physics 80 (20), 205321, 2009	115	2009
Delayed Plastic Relaxation on Patterned Si Substrates: <?format ?>Coherent SiGe Pyramids with Dominant Facets Z Zhong, W Schwinger, F Schäffler, G Bauer, G Vastola, F Montalenti, ... Physical review letters 98 (17), 176102, 2007	111	2007
Hybrid solar cells based on inorganic nanoclusters and conjugated polymers E Arici, H Hoppe, F Schäffler, D Meissner, MA Malik, NS Sariciftci Thin Solid Films 451, 612-618, 2004	110	2004

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