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Solar-Blind Photodetector with High Avalanche Gains and Bias-Tunable Detecting Functionality Based on Metastable Phase α-Ga2O3/ZnO Isotype Heterostructures
X Chen, Y Xu, D Zhou, S Yang, F Ren, H Lu, K Tang, S Gu, R Zhang, ...
ACS applied materials & interfaces 9 (42), 36997-37005, 2017
Mandates: National Natural Science Foundation of China
1.37 kV/12 A NiO/β-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability
H Gong, F Zhou, W Xu, X Yu, Y Xu, Y Yang, F Ren, S Gu, Y Zheng, ...
IEEE Transactions on Power Electronics 36 (11), 12213-12217, 2021
Mandates: National Natural Science Foundation of China
Gallium oxide-based solar-blind ultraviolet photodetectors
X Chen, FF Ren, J Ye, S Gu
Semiconductor science and technology 35 (2), 023001, 2020
Mandates: National Natural Science Foundation of China
β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings
HH Gong, XX Yu, Y Xu, XH Chen, Y Kuang, YJ Lv, Y Yang, FF Ren, ...
Applied Physics Letters 118 (20), 2021
Mandates: National Natural Science Foundation of China
Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions
H Gong, X Chen, Y Xu, Y Chen, F Ren, B Liu, S Gu, R Zhang, J Ye
IEEE Transactions on Electron Devices 67 (8), 3341-3347, 2020
Mandates: National Natural Science Foundation of China
1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness
F Zhou, H Gong, W Xu, X Yu, Y Xu, Y Yang, F Ren, S Gu, Y Zheng, ...
IEEE Transactions on Power Electronics 37 (2), 1223-1227, 2021
Mandates: National Natural Science Foundation of China
Carrier Transport and Gain Mechanisms in –Ga2O3-Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors
Y Xu, X Chen, D Zhou, F Ren, J Zhou, S Bai, H Lu, S Gu, R Zhang, ...
IEEE Transactions on Electron Devices 66 (5), 2276-2281, 2019
Mandates: National Natural Science Foundation of China
Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on β-Ga2O3 Single Crystals
X Chen, W Mu, Y Xu, B Fu, Z Jia, FF Ren, S Gu, R Zhang, Y Zheng, X Tao, ...
ACS applied materials & interfaces 11 (7), 7131-7137, 2019
Mandates: National Natural Science Foundation of China
Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors
B Liu, D Chen, H Lu, T Tao, Z Zhuang, Z Shao, W Xu, H Ge, T Zhi, F Ren, ...
Advanced Materials 32 (27), 1904354, 2020
Mandates: National Natural Science Foundation of China
On the origin of dislocation generation and annihilation in α-Ga2O3 epilayers on sapphire
TC Ma, XH Chen, Y Kuang, L Li, J Li, F Kremer, FF Ren, SL Gu, R Zhang, ...
Applied Physics Letters 115 (18), 2019
Mandates: National Natural Science Foundation of China
Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability
F Zhou, HH Gong, ZP Wang, WZ Xu, XX Yu, Y Yang, FF Ren, SL Gu, ...
Applied Physics Letters 119 (26), 2021
Mandates: National Natural Science Foundation of China
Fast Speed Ga2O3 Solar-Blind Schottky Photodiodes With Large Sensitive Area
Y Xu, X Chen, Y Zhang, F Ren, S Gu, J Ye
IEEE Electron Device Letters 41 (7), 997-1000, 2020
Mandates: National Natural Science Foundation of China
High-voltage quasi-vertical GaN junction barrier Schottky diode with fast switching characteristics
F Zhou, W Xu, F Ren, D Zhou, D Chen, R Zhang, Y Zheng, T Zhu, H Lu
IEEE Electron Device Letters 42 (7), 974-977, 2021
Mandates: National Natural Science Foundation of China
Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum α-Ga2O3 on sapphire
JG Hao, TC Ma, XH Chen, Y Kuang, L Li, J Li, FF Ren, SL Gu, HH Tan, ...
Applied Surface Science 513, 145871, 2020
Mandates: National Natural Science Foundation of China
70-μm-Body Ga2O3 Schottky Barrier Diode With 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency
H Gong, F Zhou, X Yu, W Xu, FF Ren, S Gu, H Lu, J Ye, R Zhang
IEEE Electron Device Letters 43 (5), 773-776, 2022
Mandates: National Natural Science Foundation of China
In situ heteroepitaxial construction and transport properties of lattice-matched α-Ir2O3/α-Ga2O3 pn heterojunction
JG Hao, HH Gong, XH Chen, Y Xu, FF Ren, SL Gu, R Zhang, YD Zheng, ...
Applied Physics Letters 118 (26), 2021
Mandates: National Natural Science Foundation of China
A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction
XY Sun, XH Chen, JG Hao, ZP Wang, Y Xu, HH Gong, YJ Zhang, XX Yu, ...
Applied Physics Letters 119 (14), 2021
Mandates: National Natural Science Foundation of China
Band alignment and band bending at α-Ga2O3/ZnO nn isotype hetero-interface
XH Chen, YT Chen, FF Ren, SL Gu, HH Tan, C Jagadish, JD Ye
Applied Physics Letters 115 (20), 2019
Mandates: National Natural Science Foundation of China
Band Alignment and Enhanced Interfacial Conductivity Manipulated by Polarization in a Surfactant-Mediated Grown κ-Ga2O3/In2O3 Heterostructure
Y Kuang, X Chen, T Ma, Q Du, Y Zhang, J Hao, FF Ren, B Liu, S Zhu, ...
ACS Applied Electronic Materials 3 (2), 795-803, 2021
Mandates: National Natural Science Foundation of China
Manipulable and Hybridized, Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods
T Tao, T Zhi, B Liu, J Dai, Z Zhuang, Z Xie, P Chen, F Ren, D Chen, ...
Advanced Functional Materials 27 (37), 1703198, 2017
Mandates: National Natural Science Foundation of China
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