| Structure including a photoresist underlayer and method of forming same Y Sun, D De Roest, D Piumi, IJ Raaijmakers, BH Kim, T Blanquart, ... US Patent App. 16/922,520, 2021 | 275 | 2021 |
| Area-Selective Atomic Layer Deposition of TiN, TiO2, and HfO2 on Silicon Nitride with inhibition on Amorphous Carbon E Stevens, Y Tomczak, BT Chan, E Altamirano Sanchez, GN Parsons, ... Chemistry of Materials 30 (10), 3223-3232, 2018 | 88 | 2018 |
| Diffusion‐Mediated Growth and Size‐Dependent Nanoparticle Reactivity during Ruthenium Atomic Layer Deposition on Dielectric Substrates J Soethoudt, F Grillo, EA Marques, JR van Ommen, Y Tomczak, L Nyns, ... Advanced materials interfaces 5 (24), 1800870, 2018 | 69 | 2018 |
| BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap J Swerts, S Mertens, T Lin, S Couet, Y Tomczak, K Sankaran, G Pourtois, ... Applied Physics Letters 106 (26), 2015 | 58 | 2015 |
| Insight into selective surface reactions of dimethylamino-trimethylsilane for area-selective deposition of metal, nitride, and oxide J Soethoudt, Y Tomczak, B Meynaerts, BT Chan, A Delabie The Journal of Physical Chemistry C 124 (13), 7163-7173, 2020 | 57 | 2020 |
| [Zr(NEtMe)2(guan-NEtMe)2] as a Novel Atomic Layer Deposition Precursor: ZrO2 Film Growth and Mechanistic Studies T Blanquart, J Niinisto, N Aslam, M Banerjee, Y Tomczak, M Gavagnin, ... Chemistry of Materials 25 (15), 3088-3095, 2013 | 33 | 2013 |
| [Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications E Liu, J Swerts, S Couet, S Mertens, Y Tomczak, T Lin, V Spampinato, ... Applied Physics Letters 108 (13), 2016 | 32 | 2016 |
| In situ reaction mechanism studies on lithium hexadimethyldisilazide and ozone atomic layer deposition process for lithium silicate Y Tomczak, K Knapas, M Sundberg, M Leskela, M Ritala The Journal of Physical Chemistry C 117 (27), 14241-14246, 2013 | 32 | 2013 |
| Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance Y Tomczak, J Swerts, S Mertens, T Lin, S Couet, E Liu, K Sankaran, ... Applied Physics Letters 108 (4), 2016 | 23 | 2016 |
| Experimental observation of back-hopping with reference layer flipping by high-voltage pulse in perpendicular magnetic tunnel junctions W Kim, S Couet, J Swerts, T Lin, Y Tomczak, L Souriau, D Tsvetanova, ... IEEE Transactions on Magnetics 52 (7), 1-4, 2016 | 21 | 2016 |
| In Situ Reaction Mechanism Studies on Atomic Layer Deposition of AlxSiyOz from Trimethylaluminium, Hexakis(ethylamino)disilane, and Water Y Tomczak, K Knapas, S Haukka, M Kemell, M Heikkila, M Ceccato, ... Chemistry of Materials 24 (20), 3859-3867, 2012 | 21 | 2012 |
| In Situ Reaction Mechanism Studies on the New tBuN=M(NEt2)3 -Water and tBuN=M(NEt2)3 - Ozone (M = Nb,Ta) Atomic Layer Deposition Processes Y Tomczak, K Knapas, M Sundberg, M Leskela, M Ritala Chemistry of Materials 24 (9), 1555-1561, 2012 | 20 | 2012 |
| Atomic Layer Deposition, Characterization, and Growth Mechanistic Studies of TiO2 Thin Films M Kaipio, T Blanquart, Y Tomczak, J Niinisto, M Gavagnin, V Longo, ... Langmuir 30 (25), 7395-7404, 2014 | 19 | 2014 |
| Oxygen scavenging by Ta spacers in double-MgO free layers for perpendicular spin-transfer torque magnetic random-access memory S Couet, J Swerts, S Mertens, T Lin, Y Tomczak, E Liu, B Douhard, ... IEEE Magnetics Letters 7, 1-4, 2016 | 17 | 2016 |
| Influence of the reference layer composition on the back-end-of-line compatibility of Co/Ni-based perpendicular magnetic tunnel junction stacks Y Tomczak, T Lin, J Swerts, S Couet, S Mertens, E Liu, W Kim, ... IEEE Transactions on Magnetics 52 (7), 1-4, 2016 | 9 | 2016 |
| Two-dimensional WS2 crystals at predetermined locations by anisotropic growth during atomic layer deposition B Groven, Y Tomczak, M Heyns, I Radu, A Delabie Journal of Applied Physics 128 (17), 2020 | 8 | 2020 |
| Impact of sequential infiltration synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning P Vanelderen, V Blanco, M Mao, Y Tomczak, D De Roest, N Kissoon, ... Extreme Ultraviolet (EUV) Lithography X 10957, 166-180, 2019 | 6 | 2019 |
| In situ reaction mechanism studies on the Ti (NMe2) 2 (OiPr) 2-D2O and Ti (OiPr) 3 [MeC (NiPr) 2]-D2O atomic layer deposition processes Y Tomczak, K Knapas, M Leskelä, M Ritala Journal of Vacuum Science & Technology A 32 (1), 2014 | 4 | 2014 |
| Process of forming a gate of a semiconductor device BT Chan, EA Sanchez, A Delabie, Y Tomczak US Patent App. 16/597,629, 2020 | 2 | 2020 |
| Methods for forming spacers and related structures Y Tomczak, KA Patel US Patent App. 18/166,879, 2023 | 1 | 2023 |
