Behzad Ebrahimi

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	All	Since 2020
Citations	605	276
h-index	15	9
i10-index	18	7

20102011201220132014201520162017201820192020202120222023202420259 5 12 16 24 45 60 51 44 60 38 45 59 63 59 9

Co-authors

Ali Afzali-KushaUniversity of TehranVerified email at ut.ac.ir
Massoud PedramCharles Lee Powell Professor of Electrical Engineering & Computer Science, Univ of SouthernVerified email at usc.edu
Mehdi SaremiIEEE Senior Member, Senior Staff in Samsung SemiconductorVerified email at asu.edu
Hassan Afzali-KushaUniversity of Southern CaliforniaVerified email at usc.edu
Hossein AghababaUniversity of TehranVerified email at ut.ac.ir
Masoud RostamiMicrosoftVerified email at microsoft.com
Mohammad AnsariEE. Ph.D.Verified email at ut.ac.ir
Zainalabedin NavabiProfessor of Electrical and Computer Engineering, University of TehranVerified email at ut.ac.ir
Saeed ZeinolabedinzadehArizona State UniversityVerified email at asu.edu
Reza AsadpourPurdue UniversityVerified email at purdue.edu
Shaahin HessabiDept. of Computer Science & Engineering, Sharif University of Technology, IranVerified email at sharif.edu
Sina Sayyah EnsanIntel CorporationVerified email at intel.com
Mohammad Hossein MoaiyeriAssociate Professor of Electronics and Computer Engineering, Shahid Beheshti University, IranVerified email at sbu.ac.ir
Vahid MoalemiPHD student at University of Texas at DallasVerified email at utdallas.edu
Mohsen JafariIntel Co.Verified email at umich.edu
massoud doustiIslamic Azad University Science and Research branchVerified email at srbiau.ac.ir
Ghasem PasandiNVIDIA, University of Southern California (USC)Verified email at usc.edu
Farzan JazaeriResearch Scientist, EPFLVerified email at epfl.ch
H. R. AhmadiAssistant Professor, University of TehranVerified email at ut.ac.ir
Samaneh Soleimani-AmiriBabol Noshirvani University of TechnologyVerified email at nit.ac.ir

Behzad Ebrahimi

Assistant Professor of Electrical Engineering, Science & Research Branch, Islamic Azad University

Verified email at srbiau.ac.ir - Homepage

VLSI Device and Circuit Design Reliability-aware Design SRAM Design


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A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies M Ansari, H Afzali-Kusha, B Ebrahimi, Z Navabi, A Afzali-Kusha, ... Integration 50, 91-106, 2015	81	2015
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement M Saremi, B Ebrahimi, A Afzali-Kusha, S Mohammadi Microelectronics Reliability 51 (12), 2069-2076, 2011	49	2011
A single-ended low leakage and low voltage 10T SRAM cell with high yield N Eslami, B Ebrahimi, E Shakouri, D Najafi	41	2020
Statistical design optimization of FinFET SRAM using back-gate voltage B Ebrahimi, M Rostami, A Afzali-Kusha, M Pedram IEEE Transactions on Very Large Scale Integration (VLSI) Systems 19 (10 …, 2010	39	2010
Process variation study of ground plane SOI MOSFET M Saremi, B Ebrahimi, AA Kusha, M Saremi 2nd Asia symposium on quality electronic design (ASQED), 66-69, 2010	38	2010
Ground plane SOI MOSFET based SRAM with consideration of process variation M Saremi, B Ebrahimi, A Afzali-Kusha 2010 IEEE international conference of electron devices and solid-state …, 2010	32	2010
Low standby power and robust FinFET based SRAM design B Ebrahimi, S Zeinolabedinzadeh, A Afzali-Kusha 2008 IEEE Computer Society Annual Symposium on VLSI, 185-190, 2008	29	2008
Single-Ended 10T SRAM Cell with High Yield and Low Standby Power E Shakouri, B Ebrahimi, N Eslami, M Chahardori Circuits, Systems, and Signal Processing, 1-21, 2021	27	2021
A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology S Sayyah Ensan, MH Moaiyeri, B Ebrahimi, S Hessabi, A Afzali-Kusha Journal of Computational Electronics 18, 519-526, 2019	26	2019
A robust and low power 7T SRAM cell design K Mehrabi, B Ebrahimi, A Afzali-Kusha 2015 18th CSI International Symposium on Computer Architecture and Digital …, 2015	24	2015
Robust FinFET SRAM design based on dynamic back-gate voltage adjustment B Ebrahimi, A Afzali-Kusha, H Mahmoodi Microelectronics Reliability 54 (11), 2604-2612, 2014	23	2014
G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems H Aghababa, B Ebrahimi, M Saremi, V Moalemi, B Forouzandeh IEICE Electronics Express 9 (10), 881-887, 2012	21	2012
Probability calculation of read failures in nano-scaled SRAM cells under process variations H Aghababa, B Ebrahimi, A Afzali-Kusha, M Pedram Microelectronics Reliability 52 (11), 2805-2811, 2012	18	2012
Low power and robust 8T/10T subthreshold SRAM cells B Ebrahimi, H Afzali-Kusha, A Afzali-Kusha 2012 International Conference on Synthesis, Modeling, Analysis and …, 2012	15	2012
A high speed subthreshold SRAM cell design AR Ahmadimehr, B Ebrahimi, A Afzali-Kusha 2009 1st Asia Symposium on Quality Electronic Design, 9-13, 2009	15	2009
Realistic CNFET based SRAM cell design for better write stability B Ebrahimi, A Afzali-Kusha 2009 1st Asia Symposium on Quality Electronic Design, 14-18, 2009	14	2009
Ultra-low power FinFET based SRAM cell employing sharing current concept M Imani, M Jafari, B Ebrahimi, TS Rosing Microelectronics Reliability, 2015	12	2015
Efficient approximate multipliers utilizing compact and low-power compressors for error-resilient applications B Vakili, O Akbari, B Ebrahimi AEU-International Journal of Electronics and Communications 174, 155039, 2024	11	2024
A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages B Ebrahimi, R Asadpour, A Afzali‐Kusha, M Pedram International Journal of Circuit Theory and Applications 43 (12), 2011-2024, 2015	9	2015
Low‐power data encoding/decoding for energy‐efficient static random access memory design G Pasandi, K Mehrabi, B Ebrahimi, SM Fakhraei, A Afzali‐Kusha, ... IET Circuits, Devices & Systems 13 (8), 1152-1159, 2019	8	2019

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