First demonstration of CMOS inverter and 6T-SRAM based on GAA CFETs structure for 3D-IC applications SW Chang, PJ Sung, TY Chu, DD Lu, CJ Wang, NC Lin, CJ Su, SH Lo, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.7. 1-11.7. 4, 2019
58 2019 Fabrication of vertically stacked nanosheet junctionless field-effect transistors and applications for the CMOS and CFET inverters PJ Sung, SW Chang, KH Kao, CT Wu, CJ Su, TC Cho, FK Hsueh, WH Lee, ...
IEEE Transactions on Electron Devices 67 (9), 3504-3509, 2020
46 2020 First demonstration of heterogeneous IGZO/Si CFET monolithic 3-D integration with dual work function gate for ultralow-power SRAM and RF applications SW Chang, TH Lu, CY Yang, CJ Yeh, MK Huang, CF Meng, PJ Chen, ...
IEEE Transactions on Electron Devices 69 (4), 2101-2107, 2022
36 2022 Integration design and process of 3-D heterogeneous 6T SRAM with double layer transferred Ge/2Si CFET and IGZO pass gates for 42% reduced cell size XR Yu, MH Chuang, SW Chang, WH Chang, TC Hong, CH Chiang, ...
2022 International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2022
15 2022 3-d monolithic stacking of complementary-fet on cmos for next generation compute-in-memory sram MA Baig, CJ Yeh, SW Chang, BH Qiu, XS Huang, CH Tsai, YM Chang, ...
IEEE Journal of the Electron Devices Society 11, 107-113, 2022
9 2022 First demonstration of vertical stacked hetero-oriented n-Ge (111)/p-Ge (100) CFET toward mobility balance engineering XR Yu, WH Chang, TC Hong, PJ Sung, A Agarwal, GL Luo, CT Wu, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
3 2022 Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses M Aslam, YJ Lee, Y Li, YH Chen, SW Chang, WH Lee
ECS Journal of Solid State Science and Technology, 2024
2 2024 Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT Under Bias and Temperature Stress M Aslam, SW Chang, YH Chen, YJ Lee, Y Li, WH Lee
IEEE Journal of the Electron Devices Society, 2024
2 2024 Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress M Aslam, MH Chuang, SW Chang, YH Chen, YJ Lee, Y Li
IEEE Open Journal of Nanotechnology, 2024
2 2024 First demonstration of heterogeneous L-shaped field effect transistor (LFET) for angstrom technology nodes CY Yang, PJ Sung, MH Chuang, CW Chang, YJ Shih, TY Huang, DD Lu, ...
2022 International Electron Devices Meeting (IEDM), 20.2. 1-20.2. 4, 2022
2 2022 A 1.8-V GPIO With Design-Technology-Reliability Co-Optimization in Sub-3-nm GAA-NS Technology WC Chen, SH Chen, MC Huang, SW Chang, G Hellings, G Groeseneken
IEEE Journal of Solid-State Circuits, 2024
2024 Sub- SW Chang, HH Hu, CW Wu, WH Lu, WH Lee, YJ Lee
IEEE Transactions on Electron Devices, 2024
2024 TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET SW Chang, JH Chou, WH Lee, YJ Lee, DD Lu
Solid-State Electronics 201, 108585, 2023
2023 (Invited, Digital Presentation) Heterogeneous IGZO/Si CFET Monolithic 3D Integration YJ Lee, SW Chang, WH Lee, YH Wang
ECS Transactions 109 (6), 145, 2022
2022 Nanosheet-Compatible Complementary-Field Effect Transistor Logic Non-Volatile Memory Device SW Chang, YM Chang, WH Lee, YJ Lee, DD Lu
ECS Journal of Solid State Science and Technology 11 (9), 095003, 2022
2022 
Tien Sheng ChaoNational Yang Ming Chiao Tung UniversityVerified email at nycu.edu.tw