| Growth of self-assembled n-alkyltrichlorosilane films on Si (100) investigated by atomic force microscopy K Bierbaum, M Grunze, AA Baski, LF Chi, W Schrepp, H Fuchs Langmuir 11 (6), 2143-2150, 1995 | 304 | 1995 |
| The structure of silicon surfaces from (001) to (111) AA Baski, SC Erwin, LJ Whitman Surface Science 392 (1-3), 69-85, 1997 | 269 | 1997 |
| Aluminum on the Si (100) surface: Growth of the first monolayer J Nogami, AA Baski, CF Quate Physical Review B 44 (3), 1415, 1991 | 223 | 1991 |
| The origin of the superstructure in Bi2Sr2CaCu2O8+ δ as revealed by scanning tunneling microscopy MD Kirk, J Nogami, AA Baski, DB Mitzi, A Kapitulnik, TH Geballe, ... Science 242 (4886), 1673-1675, 1988 | 217 | 1988 |
| Highly efficient electron field emission from graphene oxide sheets supported by nickel nanotip arrays D Ye, S Moussa, JD Ferguson, AA Baski, MS El-Shall Nano letters 12 (3), 1265-1268, 2012 | 172 | 2012 |
| Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si (001) 2× 1-Sb M Richter, JC Woicik, J Nogami, P Pianetta, KE Miyano, AA Baski, ... Physical review letters 65 (27), 3417, 1990 | 166 | 1990 |
| A stable high-index surface of silicon: Si (5 5 12) AA Baski, LJ Whitman, SC Erwin Science 269 (5230), 1556-1560, 1995 | 165 | 1995 |
| √ 3×√ 3→ 6× 6 phase transition on the Au/Si (111) surface J Nogami, AA Baski, CF Quate Physical Review Letters 65 (13), 1611, 1990 | 145 | 1990 |
| Epitaxial growth of silver on mica as studied by AFM and STM AA Baski, H Fuchs Surface Science 313 (3), 275-288, 1994 | 135 | 1994 |
| Indium-induced reconstructions of the Si (100) surface AA Baski, J Nogami, CF Quate Physical Review B 43 (11), 9316, 1991 | 133 | 1991 |
| Surface photovoltage in undoped n-type GaN MA Reshchikov, M Foussekis, AA Baski Journal of Applied Physics 107 (11), 2010 | 132 | 2010 |
| Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy D Huang, P Visconti, KM Jones, MA Reshchikov, F Yun, AA Baski, T King, ... Applied Physics Letters 78 (26), 4145-4147, 2001 | 115 | 2001 |
| Quasiperiodic nanoscale faceting of high-index Si surfaces AA Baski, LJ Whitman Physical review letters 74 (6), 956, 1995 | 115 | 1995 |
| Epitaxial lateral overgrowth of (112 2) semipolar GaN on (11 00) m-plane sapphire by metalorganic chemical vapor deposition X Ni, Ü Özgür, AA Baski, H Morkoç, L Zhou, DJ Smith, CA Tran Applied physics letters 90 (18), 2007 | 114 | 2007 |
| Structure of the Sb-terminated Si (100) surface J Nogami, AA Baski, CF Quate | 113* | |
| Structure and Stability of SC Erwin, AA Baski, LJ Whitman Physical review letters 77 (4), 687, 1996 | 104 | 1996 |
| Si (111)-5× 1-Au reconstruction as studied by scanning tunneling microscopy AA Baski, J Nogami, CF Quate Physical Review B 41 (14), 10247, 1990 | 104 | 1990 |
| Gallium growth and reconstruction on the Si (100) surface AA Baski, J Nogami, CF Quate Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (1 …, 1990 | 104 | 1990 |
| Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy S Chevtchenko, X Ni, Q Fan, AA Baski, H Morkoç Applied physics letters 88 (12), 2006 | 95 | 2006 |
| 1-D nanostructures grown on the Si (5 5 12) surface AA Baski, KM Saoud, KM Jones Applied surface science 182 (3-4), 216-222, 2001 | 93 | 2001 |