| 27.6% conversion efficiency, a new record for single-junction solar cells under 1 sun illumination BM Kayes, H Nie, R Twist, SG Spruytte, F Reinhardt, IC Kizilyalli, ... 2011 37th IEEE photovoltaic specialists conference, 000004-000008, 2011 | 599 | 2011 |
| Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing JW Lyding, K Hess, IC Kizilyalli Applied Physics Letters 68 (18), 2526-2528, 1996 | 463 | 1996 |
| Vertical power pn diodes based on bulk GaN IC Kizilyalli, AP Edwards, O Aktas, T Prunty, D Bour IEEE Transactions on Electron Devices 62 (2), 414-422, 2014 | 400 | 2014 |
| 1.5-kV and 2.2-m -cm Vertical GaN Transistors on Bulk-GaN Substrates H Nie, Q Diduck, B Alvarez, AP Edwards, BM Kayes, M Zhang, G Ye, ... IEEE Electron Device Letters 35 (9), 939-941, 2014 | 386 | 2014 |
| High voltage vertical GaN pn diodes with avalanche capability IC Kizilyalli, AP Edwards, H Nie, D Disney, D Bour IEEE Transactions on Electron Devices 60 (10), 3067-3070, 2013 | 294 | 2013 |
| Giant isotope effect in hot electron degradation of metal oxide silicon devices K Hess, IC Kizilyalli, JW Lyding IEEE Transactions on Electron Devices 45 (2), 406-416, 1998 | 201 | 1998 |
| 3.7 kV vertical GaN PN diodes IC Kizilyalli, AP Edwards, H Nie, D Bour, T Prunty, D Disney IEEE Electron Device Letters 35 (2), 247-249, 2013 | 178 | 2013 |
| Use of SiD4 for deposition of ultra thin and controllable oxides DC Brady, IC Kizilyalli, Y Ma, PK Roy US Patent 6,025,280, 2000 | 170 | 2000 |
| Stacked high-ε gate dielectric for gigascale integration of metal–oxide–semiconductor technologies PK Roy, IC Kizilyalli Applied Physics Letters 72 (22), 2835-2837, 1998 | 160 | 1998 |
| 4-kV and 2.8- -cm2 Vertical GaN p-n Diodes With Low Leakage Currents IC Kizilyalli, T Prunty, O Aktas ieee electron device letters 36 (10), 1073-1075, 2015 | 151 | 2015 |
| Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability IC Kizilyalli, JW Lyding, K Hess IEEE Electron Device Letters 18 (3), 81-83, 1997 | 145 | 1997 |
| Vertical GaN power diodes with a bilayer edge termination JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ... IEEE Transactions on Electron Devices 63 (1), 419-425, 2015 | 136 | 2015 |
| Reliability of large periphery GaN-on-Si HFETs S Singhal, T Li, A Chaudhari, AW Hanson, R Therrien, JW Johnson, ... Microelectronics Reliability 46 (8), 1247-1253, 2006 | 127 | 2006 |
| On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing Z Chen, K Hess, J Lee, JW Lyding, E Rosenbaum, I Kizilyalli, S Chetlur, ... IEEE Electron Device Letters 21 (1), 24-26, 2000 | 121 | 2000 |
| Reliability studies of vertical GaN devices based on bulk GaN substrates IC Kizilyalli, P Bui-Quang, D Disney, H Bhatia, O Aktas Microelectronics Reliability 55 (9-10), 1654-1661, 2015 | 113 | 2015 |
| Two-dimensional transient simulation of an idealized high electron mobility transistor DJ Widiger, IC Kizilyalli, K Hess, JJ Coleman IEEE transactions on electron devices 32 (6), 1092-1102, 1985 | 111 | 1985 |
| MOS transistors with stacked SiO2-Ta2O5-SiO2 gate dielectrics for giga-scale integration of CMOS technologies IC Kizilyalli, RYS Huang, RK Roy IEEE Electron Device Letters 19 (11), 423-425, 1998 | 110 | 1998 |
| GaN-on-Si failure mechanisms and reliability improvements S Singhal, JC Roberts, P Rajagopal, T Li, AW Hanson, R Therrien, ... 2006 IEEE International Reliability Physics Symposium Proceedings, 95-98, 2006 | 96 | 2006 |
| Avalanche capability of vertical GaN pn junctions on bulk GaN substrates O Aktas, IC Kizilyalli ieee electron device letters 36 (9), 890-892, 2015 | 93 | 2015 |
| Method and system for integrated power supply with accessory functions I Kizilyalli, D Ramanathan, R Levine, M Guz US Patent App. 15/042,421, 2016 | 87 | 2016 |
