| Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition PP Paskov, R Schifano, B Monemar, T Paskova, S Figge, D Hommel Journal of Applied Physics 98 (9), 2005 | 253 | 2005 |
| Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels B Arnaudov, T Paskova, PP Paskov, B Magnusson, E Valcheva, ... Physical Review B 69 (11), 115216, 2004 | 237 | 2004 |
| GaN substrates for III-nitride devices T Paskova, DA Hanser, KR Evans Proceedings of the IEEE 98 (7), 1324-1338, 2009 | 226 | 2009 |
| Evidence for two Mg related acceptors in GaN BO Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ... Physical review letters 102 (23), 235501, 2009 | 154 | 2009 |
| GaN substrates—Progress, status, and prospects T Paskova, KR Evans IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1041-1052, 2009 | 136 | 2009 |
| Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes X Li, X Ni, J Lee, M Wu, Ü Özgür, H Morkoç, T Paskova, G Mulholland, ... Applied Physics Letters 95 (12), 2009 | 134* | 2009 |
| Anisotropic strain and phonon deformation potentials in GaN V Darakchieva, T Paskova, M Schubert, H Arwin, PP Paskov, B Monemar, ... Physical Review B—Condensed Matter and Materials Physics 75 (19), 195217, 2007 | 124 | 2007 |
| InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ... Applied Physics Letters 97 (3), 2010 | 120 | 2010 |
| Development and prospects of nitride materials and devices with nonpolar surfaces T Paskova physica status solidi (b) 245 (6), 1011-1025, 2008 | 118 | 2008 |
| Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants M Slomski, N Blumenschein, PP Paskov, JF Muth, T Paskova Journal of Applied Physics 121 (23), 2017 | 106 | 2017 |
| Green light emitting diodes on a-plane GaN bulk substrates T Detchprohm, M Zhu, Y Li, Y Xia, C Wetzel, EA Preble, L Liu, T Paskova, ... Applied Physics Letters 92 (24), 2008 | 102 | 2008 |
| High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire T Paskova, R Kroeger, S Figge, D Hommel, V Darakchieva, B Monemar, ... Applied Physics Letters 89 (5), 2006 | 100 | 2006 |
| Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates C Roder, S Einfeldt, S Figge, T Paskova, D Hommel, PP Paskov, ... Journal of applied physics 100 (10), 2006 | 90 | 2006 |
| Dissociation of H-related defect complexes in Mg-doped GaN O Gelhausen, MR Phillips, EM Goldys, T Paskova, B Monemar, ... Physical Review B 69 (12), 125210, 2004 | 85 | 2004 |
| Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ... IEEE Electron device letters 33 (3), 366-368, 2012 | 84 | 2012 |
| Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers T Paskova, V Darakchieva, PP Paskov, J Birch, E Valcheva, POA Persson, ... Journal of crystal growth 281 (1), 55-61, 2005 | 81 | 2005 |
| Modeling of the free-electron recombination band in emission spectra of highly conducting n− GaN B Arnaudov, T Paskova, EM Goldys, S Evtimova, B Monemar Physical Review B 64 (4), 045213, 2001 | 81 | 2001 |
| Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates T Detchprohm, M Zhu, Y Li, L Zhao, S You, C Wetzel, EA Preble, ... Applied Physics Letters 96 (5), 2010 | 80 | 2010 |
| Strain-related structural and vibrational properties of thin epitaxial layers V Darakchieva, J Birch, M Schubert, T Paskova, S Tungasmita, G Wagner, ... Physical Review B—Condensed Matter and Materials Physics 70 (4), 045411, 2004 | 76 | 2004 |
| Nitrides with nonpolar surfaces: growth, properties, and devices T Paskova John Wiley & Sons, 2008 | 74 | 2008 |
Edward PrebleRTI InternationalVerified email at rti.org
