Phonon mechanism of mobility equilibrium fluctuation and properties of 1/f-noise SV Melkonyan, VM Aroutiounian, FV Gasparyan, HV Asriyan Physica B: Condensed Matter 382 (1-2), 65-70, 2006 | 48 | 2006 |
Non-Gaussian conductivity fluctuations in semiconductors SV Melkonyan Physica B: Condensed Matter 405 (1), 379-385, 2010 | 24 | 2010 |
Peculiarities of electron distribution function's fluctuations damping in homogeneous semiconductors SV Melkonyan, VM Aroutiounian, FV Gasparyan, CE Korman Physica B: Condensed Matter 357 (3-4), 398-407, 2005 | 19 | 2005 |
Low-frequency noise in non-homogeneously doped semiconductor HV Asriyan, FV Gasparyan, VM Aroutiounian, SV Melkonyan, ... Sensors and Actuators A: Physical 113 (3), 338-343, 2004 | 19 | 2004 |
Fluctuation-enhanced scent sensing using a single gas sensor M Kotarski, J Smulko, A Czyżewski, S Melkonyan Sensors and Actuators B: Chemical 157 (1), 85-91, 2011 | 17 | 2011 |
Semiconductor-metal interface influence on the bulk low-frequency noise behavior and role of the phonons refraction points HV Asriyan, AA Shatveryan, VM Aroutiounian, FV Gasparyan, ... Noise and Information in Nanoelectronics, Sensors, and Standards III 5846 …, 2005 | 16 | 2005 |
Temperature chaos and the lattice character of the Hooge parameter in semiconductors SV Melkonyan, FV Gasparyan, VM Aroutiouyan, HV Asriyan Modern physics letters B 12 (29n30), 1245-1254, 1998 | 10 | 1998 |
1/f Noises of homopolar and heteropolar semiconductors FV Gasparyan, SV Melkonyan, VM Aroutiounyan, HV Asriyan International Journal of Modern Physics B 14 (07), 751-760, 2000 | 9 | 2000 |
Ash. V. Surmalyan, JM Smulko, Arm SV Melkonyan, HV Asriyan J. Phys 4, 62, 2011 | 8 | 2011 |
Main sources of electron mobility fluctuations in semiconductors SV Melkonyan, FV Gasparyan, HV Asriyan Noise and Fluctuations in Circuits, Devices, and Materials 6600, 451-458, 2007 | 7 | 2007 |
Electron mobility variance in the presence of an electric field: Electron–phonon field-induced tunnel scattering SV Melkonyan Physica B: Condensed Matter 407 (24), 4804-4809, 2012 | 6 | 2012 |
1/f‐type Noise in View of Phonons Interface Percolation Dynamics SV Melkonyan, FV Gasparyan, VM Aroutiounian, HV Asriyan AIP Conference Proceedings 780 (1), 87-90, 2005 | 6 | 2005 |
Theory of 1f noise in medium and far infrared photodetectors VM Arutyunyan, FV Gasparyan, SV Melkonyan Infrared Physics 29 (2-4), 243-250, 1989 | 6 | 1989 |
Features of the refractive index of porous silicon with gradient porosity AP Hakoyan, SV Melkonyan Armenian Journal of Physics 1 (2), 146-150, 2008 | 5 | 2008 |
Low frequency noise behavior in semiconductors SV Melkonyan, FV Gasparyan, VM Aroutiunyan Modern Physics Letters B 11 (20), 899-907, 1997 | 5 | 1997 |
On the low-frequency limit of the Schönfeld pulse 1/f law SV Melkonyan Physica B: Condensed Matter 403 (12), 2029-2035, 2008 | 4 | 2008 |
Bulk mechanism of mobility fluctuation depending on features of the semiconductor-environment interface SV Melkonyan Noise and Information in Nanoelectronics, Sensors, and Standards II 5472 …, 2004 | 4 | 2004 |
Slow damping of electron distribution function fluctuations in equilibrium semiconductors SV Melkonyan, VM Aroutiounian, FV Gasparyan, CE Korman Noise and Information in Nanoelectronics, Sensors, and Standards II 5472 …, 2004 | 4 | 2004 |
Current carrier mobility fluctuations in homogeneous semiconductors SV Melkonyan, FV Gasparyan, VM Aroutiounian, CE Korman Noise and Information in Nanoelectronics, Sensors, and Standards 5115, 412-420, 2003 | 4 | 2003 |
EQUILIBRIUM CURRENT VARIANCE IN SEMICONDUCTORS. A Surmalyan, RV Hovhanisyan, SV Melkonyan Armenian Journal of Physics 4 (3), 2011 | 3 | 2011 |