Multiple Cations Enhanced Defect Passivation of Blue Perovskite Quantum Dots Enabling Efficient Light‐Emitting Diodes J Pan, Z Zhao, F Fang, L Wang, G Wang, C Liu, J Chen, J Xie, J Sun, ... Advanced Optical Materials 8 (24), 2001494, 2020 | 46 | 2020 |
High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate J Zhao, X Zhang, J He, S Chen, Z Wu, A Fan, Q Dai, ZC Feng, Y Cui ACS Photonics 5 (5), 1903-1906, 2018 | 38 | 2018 |
Defects reduction in a-plane AlGaN epi-layers grown on r-plane sapphire substrates by metal organic chemical vapor deposition J Zhao, X Zhang, Q Dai, N Wang, Z Wu, S Wang, Y Cui Applied Physics Express 10 (1), 011002, 2016 | 36 | 2016 |
Effects of Si-doping on characteristics of semi-polar (1122) plane Al0. 45Ga0. 55N epi-layers Q Dai, X Zhang, J Zhao, H Luan, Z Liang, Y Cui Materials Science in Semiconductor Processing 58, 30-33, 2017 | 29 | 2017 |
Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers H Yang, X Zhang, S Wang, Y Wang, H Luan, Q Dai, Z Wu, J Zhao, Y Cui Superlattices and Microstructures 96, 1-7, 2016 | 20 | 2016 |
Ordered GaN nanorod arrays for self-powered photoelectrochemical ultraviolet photodetectors K Chen, D Zhang, P Shao, T Zhi, J Zhao, Y Sang, W Hu, Y Ye, J Xue, ... ACS Applied Nano Materials 5 (9), 13149-13157, 2022 | 18 | 2022 |
Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer J Zhao, X Zhang, Z Wu, Q Dai, N Wang, J He, S Chen, ZC Feng, Y Cui Journal of Alloys and Compounds 729, 992-996, 2017 | 16 | 2017 |
Enhanced hole concentration and improved surface morphology for nonpolar a-plane p-type AlGaN/GaN superlattices grown with indium-surfactant A Fan, X Zhang, Z Wu, J Zhao, S Chen, H Chen, A Nasir, Y Cui Superlattices and Microstructures 130, 396-400, 2019 | 15 | 2019 |
High hole concentration in nonpolar a-plane p-AlGaN films with Mg-delta doping technique Z Wu, X Zhang, Q Dai, J Zhao, A Fan, S Wang, Y Cui Superlattices and Microstructures 109, 880-885, 2017 | 14 | 2017 |
A Synergetic Codoping Strategy Enabling Performance Improvement of Pure‐Blue Perovskite Quantum Dots Light‐Emitting Diodes J Pan, Z Zhao, F Fang, L Wang, G Wang, C Liu, Q Huang, J Sun, Y Huang, ... Advanced Optical Materials 10 (9), 2102569, 2022 | 13 | 2022 |
Indium-surfactant-assisted epitaxial growth of semi-polar plane Al0.42Ga0.58N films Z Liang, X Zhang, Q Dai, H Luan, J Zhao, Z Wu, G Hu, Y Cui Journal of Materials Science: Materials in Electronics 28, 15217-15223, 2017 | 13 | 2017 |
Study of NH3 flow duty-ratio in pulsed-flow epitaxial growth of non-polar a-plane Al0. 34Ga0. 66N films J He, X Zhang, J Zhao, S Chen, Z Wu, A Fan, Y Zhu, M Wang, ZC Feng, ... Materials Science in Semiconductor Processing 90, 219-224, 2019 | 12 | 2019 |
Effects of indium surfactant on growth and characteristics of plane AlGaN-based multiple quantum wells Q Dai, X Zhang, Z Liang, G Yang, Z Wu, S Chen, J Zhao, C Meng, J Wang, ... Optical Materials Express 8 (1), 24-29, 2017 | 12 | 2017 |
Effects of indium surfactant and MgN intermediate layers on surface morphology and crystalline quality of nonpolar a-plane AlGaN epi-layers A Nasir, X Zhang, A Fan, S Chen, N Wang, J Zhao, Z Wu, G Yang, Y Cui Optik 192, 162978, 2019 | 11 | 2019 |
Study of dual nitridation processes in growth of non-polar a-plane AlGaN epi-layers J Zhao, X Zhang, S Chen, J He, A Fan, Z Wu, S Wang, Y Liu, J Feng, ... Materials Letters 227, 108-111, 2018 | 11 | 2018 |
Effects of Mg-doping on characteristics of semi-polar (112¯ 2) plane p-AlGaN films Q Dai, X Zhang, Z Wu, G Yang, Z Liang, J Zhao, Y Cui Materials Letters 209, 472-475, 2017 | 11 | 2017 |
Epitaxial growth of semi‐polar (11‐22) plane AlGaN epi‐layers on m‐plane (10‐10) sapphire substrates H Luan, X Zhang, Z Liang, Y Wang, Q Dai, H Yang, Z Wu, J Zhao, Y Cui physica status solidi (a) 214 (5), 1600802, 2017 | 11 | 2017 |
Epitaxial growth and characteristics of nonpolar a-plane InGaN films with blue-green-red emission and entire In content range J Zhao, K Chen, M Gong, W Hu, B Liu, T Tao, Y Yan, Z Xie, Y Li, J Chang, ... Chinese Physics Letters 39 (4), 048101, 2022 | 10 | 2022 |
Epitaxial growth and characterization of non-polar a-plane AlGaN films with MgN/AlGaN insertion layers N Wang, X Zhang, J Zhao, H Zhang, Z Wu, Q Dai, S Wang, G Hu, Y Cui Journal of Physics: Conference Series 844 (1), 012003, 2017 | 10 | 2017 |
Optimizing Al composition in barriers for InGaN amber micro-LEDs with high wall-plug efficiency Y Sang, Z Zhuang, K Xing, Z Jiang, C Li, F Xu, D Zhang, J Yu, J Zhao, ... IEEE Electron Device Letters, 2023 | 9 | 2023 |