| The Peak Pairs algorithm for strain mapping from HRTEM images PL Galindo, S Kret, AM Sanchez, JY Laval, A Yanez, J Pizarro, E Guerrero, ... Ultramicroscopy 107 (12), 1186-1193, 2007 | 307 | 2007 |
| Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell E Antolín, A Martí, CD Farmer, PG Linares, E Hernández, AM Sánchez, ... Journal of Applied Physics 108 (6), 064513, 2010 | 208 | 2010 |
| Vertical order in stacked layers of self-assembled In (Ga) As quantum rings on GaAs (001) D Granados, JM García, T Ben, SI Molina Applied Physics Letters 86 (7), 071918, 2005 | 109 | 2005 |
| Aqueous Near‐Infrared Fluorescent Composites Based on Apoferritin‐Encapsulated PbS Quantum Dots B Hennequin, L Turyanska, T Ben, AM Beltran, SI Molina, M Li, S Mann, ... Advanced Materials 20 (19), 3592-3596, 2008 | 108 | 2008 |
| Identification of III–N nanowire growth kinetics via a marker technique R Songmuang, T Ben, B Daudin, D González, E Monroy Nanotechnology 21 (29), 295605, 2010 | 86 | 2010 |
| Effect of N2 and H2 plasma treatments on band edge emission of ZnO microrods J Rodrigues, T Holz, RF Allah, D Gonzalez, T Ben, MR Correia, ... Scientific reports 5, 10783, 2015 | 57 | 2015 |
| Size control of quantum wires by tailoring exchange D Fuster, MU González, L González, Y González, T Ben, A Ponce, ... Applied physics letters 85 (8), 1424-1426, 2004 | 51 | 2004 |
| Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings MA Kamarudin, M Hayne, RJ Young, QD Zhuang, T Ben, SI Molina Physical Review B 83 (11), 115311, 2011 | 43 | 2011 |
| Incorporation of Sb in quantum dots SI Molina, AM Sánchez, AM Beltrán, DL Sales, T Ben, MF Chisholm, ... Applied Physics Letters 91 (26), 263105, 2007 | 42* | 2007 |
| InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps I Ramiro, E Antolin, MJ Steer, PG Linares, E Hernandez, I Artacho, ... Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE, 000652-000656, 2012 | 41 | 2012 |
| Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields D Fuster, M Ujué González, L González, Y González, T Ben, A Ponce, ... Applied physics letters 84 (23), 4723-4725, 2004 | 40 | 2004 |
| Study of morphological and related properties of aligned zinc oxide nanorods grown by vapor phase transport on chemical bath deposited buffer layers D Byrne, R Fath Allah, T Ben, D Gonzalez Robledo, B Twamley, ... Crystal Growth & Design 11 (12), 5378-5386, 2011 | 38 | 2011 |
| Surface nanostructuring of thin films by high energy ion irradiation P Romero-Gómez, A Palmero, T Ben, JG Lozano, SI Molina, ... Physical Review B 82 (11), 115420, 2010 | 37 | 2010 |
| Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells AD Utrilla, DF Reyes, JM Llorens, I Artacho, T Ben, D González, Ž Gačević, ... Solar Energy Materials and Solar Cells 159, 282-289, 2017 | 36 | 2017 |
| Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites SI Molina, T Ben, DL Sales, J Pizarro, PL Galindo, M Varela, ... Nanotechnology 17 (22), 5652, 2006 | 36 | 2006 |
| Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate AD Utrilla, DF Grossi, DF Reyes, A Gonzalo, V Braza, T Ben, D González, ... Applied Surface Science 444, 260-266, 2018 | 35 | 2018 |
| Direct measurement of polarization-induced fields in GaN/AlN by nano-beam electron diffraction D Carvalho, K Müller-Caspary, M Schowalter, T Grieb, T Mehrtens, ... Scientific reports 6, 28459, 2016 | 34 | 2016 |
| Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications DF Reyes, V Braza, A Gonzalo, AD Utrilla, JM Ulloa, T Ben, D González Applied Surface Science 442, 664-672, 2018 | 32 | 2018 |
| Strain-balanced type-II superlattices for efficient multi-junction solar cells A Gonzalo, AD Utrilla, DF Reyes, V Braza, JM Llorens, DF Marrón, B Alén, ... Scientific Reports 7 (1), 4012, 2017 | 31 | 2017 |
| General route for the decomposition of InAs quantum dots during the capping process D González, DF Reyes, AD Utrilla, T Ben, V Braza, A Guzman, A Hierro, ... Nanotechnology 27 (12), 125703, 2016 | 31 | 2016 |